PN junction fabrication of solar cells and integration with metamaterials

2011 ◽  
Author(s):  
Amarachukwu Enemuo ◽  
David T. Crouse ◽  
Michael Crouse
Keyword(s):  
Solar Cells ◽  
Pn Junction

scholarly journals Increased efficiency in pn-junction PbS QD solar cells via NaHS treatment of the p-type layer

2017 ◽  
Vol 110 (10) ◽  
pp. 103904 ◽  
Author(s):  
Mark J. Speirs ◽  
Daniel M. Balazs ◽  
Dmitry N. Dirin ◽  
Maksym V. Kovalenko ◽  
Maria Antonietta Loi
Keyword(s):  
Solar Cells ◽  
Pn Junction ◽  
Type Layer ◽  
P Type

scholarly journals Radial PN junction, wire array solar cells

2008 ◽  
Author(s):  
B.M. Kayes ◽  
M.A. Filler ◽  
M.D. Henry ◽  
J.R. Maiolo III ◽  
M.D. Kelzenberg ◽  
...  
Keyword(s):  
Solar Cells ◽  
Wire Array ◽  
Pn Junction

PN Junction Defects Detection in Solar Cells Using Noise Diagnostics

2011 ◽  
Vol 465 ◽  
pp. 322-325
Author(s):  
Petr Paračka ◽  
Pavel Koktavý ◽  
Robert Macku
Keyword(s):  
Solar Cells ◽  
Reverse Bias ◽  
Pulse Length ◽  
Structural Defects ◽  
Appearance Time ◽  
Noise Current ◽  
Pn Junction ◽  
Pn Junctions ◽  
Local Defects ◽  
Noise Diagnostics

PN junction is one of the most important parts of solar cells. Its quality affects lifetime and efficiency of solar cells. Local defects which appear in PN junctions during the manufacture process are very important from this point of view. These are caused by localized areas with high donor or acceptor doping agents, impurities, dislocations or other mechanisms which effect in lower breakdown voltage of PN junction in reverse bias. Several base methods can be used for solar cells nondestructive diagnostics. Measuring methods of low-band noise current effective value with reverse bias junction were used in this paper. This method allows detection of local defects and volume degradation in PN junctions of solar cells and it can be used for detection of microplasma noise. This noise is an impulse noise and it is caused by local avalanche breakdowns in small area of the junction. It can be recognized by two or more level random square current pulses with constant height, random appearance time and random pulse length. Information about these effects can be used in noise diagnostics of structural defects of PN junctions and then it can be used for quality and lifetime estimation of samples with these parameters.

Local detection of deep carrier traps in the pn-junction of silicon solar cells

2013 ◽  
Vol 103 (1) ◽  
pp. 013901 ◽  
Author(s):  
T. Mchedlidze ◽  
L. Scheffler ◽  
J. Weber ◽  
M. Herms ◽  
J. Neusel ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Pn Junction ◽  
Carrier Traps ◽  
Local Detection

Molecular Beam Epitaxy of Cu-Doped BaSi2 Films on Si(111) Substrate and Evaluation & Qualification of Depth Profiles of Cu Atoms for the Formation of Efficient Solar Cells

2011 ◽  
Vol 326 ◽  
pp. 139-143 ◽  
Author(s):  
M. Ajmal Khan ◽  
T. Saito ◽  
M. Takeishi ◽  
T. Suemasu
Keyword(s):  
Solar Cells ◽  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Molecular Beam ◽  
Cost Effective ◽  
High Energy ◽  
Knudsen Cell ◽  
Potential Candidate ◽  
Space Applications ◽  
Pn Junction

The doping of Cu in the BaSi2 films grown by molecular beam epitaxy (MBE) with various Cu concentrations for the suitability of the solar cells was studied in this paper. The main objective of the present work is to investigate and compare the carrier concentration of Cu-doped BaSi2 films grown with different Cu Knudsen cell temperatures and qualify as a potential candidate for more efficient solar cells. The reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD) measurements and secondary ion mass spectroscopy (SIMS), were used to determine the structure, depth profile and composition of the grown samples. The electrical properties like resistivity as well as carrier concentration were measured by using a four point probe method and Van der Pauw technique, respectively. During the MBE growth, different temperatures for Cu Knudsen cell ranging from 800 to 1200 °C were chosen and the optimum growth condition for both heavily doped n-type as well as p-type in the MBE was investigated. In our previous work, the Al, Sb doped BaSi2 were used as a potential candidate for the formation of pn-junction for solar cells, but the result was not encouraging one due to diffusion and segregation problems in the surface and BaSi2/Si interface regions. In the present work n-type BaSi2 layers with their dopant atoms uniformly distributed in the grown layers for the formation of high-quality of BaSi2 pn-junction with single crystal nature were successfully developed. The realizations to develop cost effective and more efficient solar cells are inevitable for both terrestrial as well as space applications.

Analytical modeling of the radial pn junction nanowire solar cells

2014 ◽  
Vol 116 (2) ◽  
pp. 024308 ◽  
Author(s):  
Nouran M. Ali ◽  
Nageh K. Allam ◽  
Ashraf M. Abdel Haleem ◽  
Nadia H. Rafat
Keyword(s):  
Solar Cells ◽  
Analytical Modeling ◽  
Pn Junction
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