Characterization of impact ionization engineered InGaAs avalanche photodiodes

2011 ◽  
Author(s):  
H. R. Burris ◽  
L. M. Thomas ◽  
C. I. Moore ◽  
W. R. Smith ◽  
D. S. Rabinovich ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes

scholarly journals Comprehensive Characterization of InGaAs–InP Avalanche Photodiodes at 1550 nm With an Active Quenching ASIC

2009 ◽  
Vol 45 (7) ◽  
pp. 792-799 ◽  
Author(s):  
Jun Zhang ◽  
Rob Thew ◽  
Jean-Daniel Gautier ◽  
Nicolas Gisin ◽  
Hugo Zbinden
Keyword(s):  
Avalanche Photodiodes ◽  
Comprehensive Characterization

scholarly journals The effects of nonlocal impact ionization on the speed of avalanche photodiodes

2003 ◽  
Vol 50 (2) ◽  
pp. 347-351 ◽  
Author(s):  
P.J. Hambleton ◽  
B.K. Ng ◽  
S.A. Plimmer ◽  
J.P.R. David ◽  
G.J. Rees
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes

MBE growth and characterization of doped multiple quantum well avalanche photodiodes

1997 ◽  
Vol 175-176 ◽  
pp. 983-989 ◽  
Author(s):  
H.M. Menkara ◽  
R.N. Bicknell-Tassius ◽  
R. Benz ◽  
C.J. Summers
Keyword(s):  
Quantum Well ◽  
Avalanche Photodiodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Mbe Growth

High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region

2005 ◽  
Vol 17 (8) ◽  
pp. 1719-1721 ◽  
Author(s):  
Ning Duan ◽  
Shuling Wang ◽  
Feng Ma ◽  
Ning Li ◽  
J.C. Campbell ◽  
...  
Keyword(s):  
High Speed ◽  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Low Noise
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