Residual mechanical stress decrease in GaAs-based laser diodes via a bi-material investigation

2011 ◽  
Author(s):  
Julien LeClecH ◽  
Daniel T. Cassidy ◽  
François Laruelle ◽  
Mauro Bettiati ◽  
Jean-Pierre Landesman
Keyword(s):  
Mechanical Stress ◽  
Laser Diodes ◽  
Residual Mechanical Stress

Mechanical Stress Surpressed AlGaAs High Power TJS Laser Diodes

1983 ◽  
Author(s):  
H. Kumabe ◽  
K. Isshiki ◽  
H. Namizaki ◽  
T. Nishioka ◽  
H. Koyama ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
High Power ◽  
Laser Diodes

Study of Deformation in the Active Region of GaAs/GaAlAs Laser Diodes

2013 ◽  
Vol 333-335 ◽  
pp. 332-335
Author(s):  
Jin Ling Wu ◽  
Xin Nian Wang ◽  
Lan Dang Yuan
Keyword(s):  
Shear Stress ◽  
Thermal Stress ◽  
Active Region ◽  
Mechanical Stress ◽  
Bulk Material ◽  
Laser Diodes ◽  
Dislocation Motion ◽  
Gaas Laser ◽  
Spectral Splitting

The paper presents an investigation of deformation in the active region of GaAs laser diodes under operating conditions.Since the properties of bulk material and manufactured diode are not identical,a study of the spectral splitting and polarisation changes caused by mechanical stress in the diode is made.These results are used to calibrate instruments for a study of the deformation due to thermal stress in the diode under operating conditions.This thermal stress can exceed the shear stress required for dislocation motion in the active region of the diode.

An Approach for Characterizing Residual Mechanical Stress Caused by Packaging Processes

2006 ◽  
Vol 969 ◽  
Author(s):  
Soeren Hirsch ◽  
Bertram Schmidt
Keyword(s):  
Finite Element Method ◽  
Mechanical Stress ◽  
Flip Chip ◽  
Finite Element Method Simulation ◽  
Stress Profile ◽  
Test Chip ◽  
Resistor Network ◽  
Mems Sensor ◽  
Chip Technology ◽  
Residual Mechanical Stress

Abstractthis paper reports on a method for estimation and minimization of mechanical stress on MEMS sensor and actuator structures due to packaging processes based on flip chip technology. For studying mechanical stress a test chip with silicon membranes was fabricated. Finite element method simulation was calculate the stress profile and to determine the optimum positions for placing the resistor network.

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