Modeling of the electrical characteristics of SWIR/MWIR InGaAs/GaAsSb type-II MQW photodiodes

2011 ◽  
Author(s):  
Baile Chen ◽  
Jinrong Yuan ◽  
A. L. Holmes, Jr.
Keyword(s):  
Type Ii ◽  
Electrical Characteristics

scholarly journals Modeling of electrical characteristics of midwave type II InAs∕GaSb strain layer superlattice diodes

2008 ◽  
Vol 104 (12) ◽  
pp. 124506 ◽  
Author(s):  
V. Gopal ◽  
E. Plis ◽  
J.-B. Rodriguez ◽  
C. E. Jones ◽  
L. Faraone ◽  
...  
Keyword(s):  
Type Ii ◽  
Electrical Characteristics ◽  
Strain Layer ◽  
Strain Layer Superlattice

Type II Solar Radio Bursts over Solar Cycle 21

1994 ◽  
Vol 144 ◽  
pp. 283-284
Author(s):  
G. Maris ◽  
E. Tifrea
Keyword(s):  
Solar Radio ◽  
Interplanetary Space ◽  
Impulsive Phase ◽  
Radio Bursts ◽  
Type Ii ◽  
Solar Radio Bursts ◽  
Strong Energy ◽  
Mass Ejection ◽  
Geophysical Effect ◽  
Radio Event

The type II solar radio bursts produced by a shock wave passing through the solar corona are one of the most frequently studied solar activity phenomena. The scientific interest in this type of phenomenon is due to the fact that the presence of this radio event in a solar flare is an almost certain indicator of a future geophysical effect. The origin of the shock waves which produce these bursts is not at all simple; besides the shocks which are generated as a result of a strong energy release during the impulsive phase of a flare, there are also the shocks generated by a coronal mass ejection or the shocks which appear in the interplanetary space due to the supplementary acceleration of the solar particles.

Heat-Etching with a Bullivant Type II Simple Freeze-Cleave Device

1970 ◽  
Vol 28 ◽  
pp. 106-107 ◽  
Author(s):  
Ronald S. Weinstein ◽  
N. Scott McNutt
Keyword(s):  
New Zealand ◽  
General Hospital ◽  
Massachusetts General Hospital ◽  
Type I ◽  
Type Ii ◽  
Collaborative Effort ◽  
Temperature And Pressure ◽  
The University

The Type I simple cold block device was described by Bullivant and Ames in 1966 and represented the product of the first successful effort to simplify the equipment required to do sophisticated freeze-cleave techniques. Bullivant, Weinstein and Someda described the Type II device which is a modification of the Type I device and was developed as a collaborative effort at the Massachusetts General Hospital and the University of Auckland, New Zealand. The modifications reduced specimen contamination and provided controlled specimen warming for heat-etching of fracture faces. We have now tested the Mass. General Hospital version of the Type II device (called the “Type II-MGH device”) on a wide variety of biological specimens and have established temperature and pressure curves for routine heat-etching with the device.

Ultrastructure of pulmonary microvasculature in acute endotoxemia

1978 ◽  
Vol 36 (2) ◽  
pp. 470-471
Author(s):  
R. G. Gerrity ◽  
M. Richardson
Keyword(s):  
Polymorphonuclear Leukocytes ◽  
Alveolar Epithelium ◽  
Endothelial Damage ◽  
Capillary Endothelium ◽  
Type Ii Cells ◽  
Type Ii ◽  
Interstitial Edema ◽  
Pulmonary Capillaries ◽  
Lung Ultrastructure ◽  
Fibrin Thrombi

Dogs were injected intravenously with E_. coli endotoxin (2 mg/kg), and lung samples were taken at 15 min., 1 hr. and 24 hrs. At 15 min., occlusion of pulmonary capillaries by degranulating platelets and polymorphonuclear leukocytes (PML) was evident (Fig. 1). Capillary endothelium was intact but endothelial damage in small arteries and arterioles, accompanied by intraalveolar hemorrhage, was frequent (Fig. 2). Sloughing of the surfactant layer from alveolar epithelium was evident (Fig. 1). At 1 hr., platelet-PML plugs were no longer seen in capillaries, the endothelium of which was often vacuolated (Fig. 3). Interstitial edema and destruction of alveolar epithelium were seen, and type II cells had discharged their granules into the alveoli (Fig. 4). At 24 hr. phagocytic PML's were frequent in peripheral alveoli, while centrally, alveoli and vessels were packed with fibrin thrombi and PML's (Fig. 5). In similar dogs rendered thrombocytopenic with anti-platelet serum, lung ultrastructure was similar to that of controls, although PML's were more frequently seen in capillaries in the former (Fig. 6).

Mitochondria microcrystals deposition in some inherited diseases of lipid metabolism.

1978 ◽  
Vol 36 (2) ◽  
pp. 256-257
Author(s):  
S. Laoussadi ◽  
A. Kahan ◽  
G. Aubouy ◽  
F. Delbarre
Keyword(s):  
Synovial Tissue ◽  
Storage Disease ◽  
Metabolic Diseases ◽  
Uranyl Acetate ◽  
List Type ◽  
Type Ii ◽  
Type Number ◽  
Lipid Storage Disease ◽  
Thin Sections ◽  
Mean Size

Several patients with Fabry's, Gaucher's diseases and hyperlipoproteinemia type II and with arthropatic manifestations were observed.As no histological explanation for these symptoms was available,an ultrastructural study of synovial tissue was done to establish an anatomoclinical relation.Material and Methods :synovial membrane samples were obtained by needle biopsies of the knee from three patients with arthropatic manifestations of each disease.They were fixed in 5% glutaraldehyde, postfixed in 1% osmium tetraoxyde and embedded in Epon 812. Thin sections coloured by uranyl acetate and lead citrate were observed with an Elmiskop I Siemens electron microscope.Two important phenomena were observed in synovial tissue:Specific patterns of each lipid storage disease,which are now well known.In all the three metabolic diseases, hydroxyapatite-like crystals were found. They are characterized by their intramitochondrial localization, without any relation with cristae,an anarchic disposition and a mean size of 550 A.Crystals may be found also free in the cytoplasm of synoviocytes Some micrographs suggest an evolution in four steps :a. mitochondria with only a few microcrystalsb. mitochondria stuffed with these structuresc. disruption of mitochondria membranesd. microcrystals appear free in the cytoplasm

Labelling of non-A, non-B hepatitis infected chimpanzee hepatocytes with nuclease-gold conjugates

1984 ◽  
Vol 42 ◽  
pp. 250-251
Author(s):  
G. D. Gagne ◽  
M. F. Miller ◽  
D. A. Peterson
Keyword(s):  
Endoplasmic Reticulum ◽  
Experimental Infection ◽  
Uranyl Acetate ◽  
Type I ◽  
Cellular Injury ◽  
Type Ii ◽  
Tubular Structures ◽  
Type Iii ◽  
Type Iv ◽  
Infected Chimpanzee

Experimental infection of chimpanzees with non-A, non-B hepatitis (NANB) or with delta agent hepatitis results in the appearance of characteristic cytoplasmic alterations in the hepatocytes. These alterations include spongelike inclusions (Type I), attached convoluted membranes (Type II), tubular structures (Type III), and microtubular aggregates (Type IV) (Fig. 1). Type I, II and III structures are, by association, believed to be derived from endoplasmic reticulum and may be morphogenetically related. Type IV structures are generally observed free in the cytoplasm but sometimes in the vicinity of type III structures. It is not known whether these structures are somehow involved in the replication and/or assembly of the putative NANB virus or whether they are simply nonspecific responses to cellular injury. When treated with uranyl acetate, type I, II and III structures stain intensely as if they might contain nucleic acids. If these structures do correspond to intermediates in the replication of a virus, one might expect them to contain DNA or RNA and the present study was undertaken to explore this possibility.

Interfacial studies in Nb3Sn superconductors

1991 ◽  
Vol 49 ◽  
pp. 590-591
Author(s):  
Ernest L. Hall ◽  
Lee E. Rumaner ◽  
Mark G. Benz
Keyword(s):  
Grain Size ◽  
Grain Boundaries ◽  
Flux Pinning ◽  
Size Control ◽  
High Magnetic Fields ◽  
Type Ii ◽  
Reaction Interface ◽  
Liquid Diffusion ◽  
Type Ii Superconductor ◽  
Grain Size Control

The intermetallic compound Nb3Sn is a type-II superconductor of interest because it has high values of critical current density Jc in high magnetic fields. One method of forming this compound involves diffusion of Sn into Nb foil containing small amounts of Zr and O. In order to maintain high values of Jc, it is important to keep the grain size in the Nb3Sn as small as possible, since the grain boundaries act as flux-pinning sites. It has been known for many years that Zr and O were essential to grain size control in this process. In previous work, we have shown that (a) the Sn is transported to the Nb3Sn/Nb interface by liquid diffusion along grain boundaries; (b) the Zr and O form small ZrO2 particles in the Nb3Sn grains; and (c) many very small Nb3Sn grains nucleate from a single Nb grain at the reaction interface. In this paper we report the results of detailed studies of the Nb3Sn/Nb3Sn, Nb3Sn/Nb, and Nb3Sn/ZrO2 interfaces.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

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