Phase change characteristics of Ge 2 Sb 2 Te 5 thin film for a self-holding optical gate switch

2011 ◽  
Author(s):  
Tatsuya Toyosaki ◽  
Daiki Tanaka ◽  
Yuya Shoji ◽  
Masashi Kuwahara ◽  
Xiaomin Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Change Characteristics ◽  
Optical Gate

scholarly journals Phase Change Characteristics of Ge-Se-Te Thin Film for PRAM

2011 ◽  
Vol 24 (12) ◽  
pp. 982-987
Author(s):  
Jae-Ho Shin ◽  
Byung-Cheul Kim ◽  
Jong-Bin Yeo ◽  
Hyun-Yong Lee
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Change Characteristics

The effect of an aluminum heat-sink layer on the laser-induced amorphization of SiOx/TeGeSn/SiOx phase-change recording films

1989 ◽  
Vol 47 ◽  
pp. 574-575
Author(s):  
Matthew R. Libera ◽  
Martin Chen
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Heat Sink ◽  
Multilayer Film ◽  
Glassy Phase ◽  
Film Structure ◽  
Glass Forming ◽  
Active Storage ◽  
Dielectric Layers ◽  
Amorphous States

Phase-change erasable optical storage is based on the ability to switch a micron-sized region of a thin film between the crystalline and amorphous states using a diffraction-limited laser as a heat source. A bit of information can be represented as an amorphous spot on a crystalline background, and the two states can be optically identified by their different reflectivities. In a typical multilayer thin-film structure the active (storage) layer is sandwiched between one or more dielectric layers. The dielectric layers provide physical containment and act as a heat sink. A viable phase-change medium must be able to quench to the glassy phase after melting, and this requires proper tailoring of the thermal properties of the multilayer film. The present research studies one particular multilayer structure and shows the effect of an additional aluminum layer on the glass-forming ability.

Electron Microscopy Study on Amorphous Ge-Sb-Te Thin Film for Phase Change Optical Recording

2003 ◽  
Vol 42 (Part 2, No. 10A) ◽  
pp. L1158-L1160 ◽  
Author(s):  
Muneyuki Naito ◽  
Manabu Ishimaru ◽  
Yoshihiko Hirotsu ◽  
Masaki Takashima
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Phase Change ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Optical Recording

Atomistic and macroscopic characterization of nanoscale thin film liquid-vapor phase change phenomena

2021 ◽  
Vol 170 ◽  
pp. 107159
Author(s):  
Md Muntasir Alam ◽  
Md Shajedul Hoque Thakur ◽  
Mahmudul Islam ◽  
Mohammad Nasim Hasan ◽  
Yuichi Mitsutake ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Vapor Phase ◽  
Nanoscale Thin Film ◽  
Phase Change Phenomena ◽  
Liquid Vapor

Preparation of PVA/PEG Phase Change Composite Nanofibers by Electrospinning

2011 ◽  
Vol 306-307 ◽  
pp. 37-40 ◽  
Author(s):  
Da Hui Sun ◽  
Tian Yu Xu ◽  
Yong Jia Liu ◽  
Mei Zhang
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Composite Nanofibers ◽  
Diameter Distribution ◽  
Weight Percentage ◽  
Weight Content ◽  
Reversible Phase Transition ◽  
Change Characteristics ◽  
Micro Morphology ◽  
Reversible Phase

Phase change PVA / PEG composite nanofibers were prepared by electrospinning, micro-morphology of PVA / PEG fibers with different weight content were analyzed, the phase change characteristics were also analyzed. The result showed that well distributed composite nanofibers which composed by PVA/PEG blend solution can be obtained by electrospinning.PVA fibreforming were influenced because of the existence of PEG, including bond, irregular block, small rough, uneven diameter distribution in fibers. PVA/PEG blend solution of 4:6 weight content was well fibreforming compared with other different weight content.The continuity of spinneret flow in electrospinning would directly affected by polymer solution consentrition and viscosity. Further research about which and the influence in fibers diameter and morphology will be explored. Composite nanofibers possessed reversible phase transition characteristics,Tm Essentially unchanged ,Tcwere related to the weight percentage of PEG/PVA, at the same time, the enthalpy will increase along with the gradually increase in weight percentage of PEG.

Optical gate action of a molecular thin film probed with femtosecond near-field optical microscopy

2000 ◽  
Vol 77 (9) ◽  
pp. 1283-1285 ◽  
Author(s):  
H. Kawashima ◽  
M. Furuki ◽  
S. Tatsuura ◽  
M. Tian ◽  
Y. Sato ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Microscopy ◽  
Near Field ◽  
Optical Gate

scholarly journals All-optical dynamic tuning of local excitonic emission of monolayer MoS2 by integration with Ge2Sb2Te5

Nanophotonics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 2351-2359
Author(s):  
Hao Ouyang ◽  
Haitao Chen ◽  
Yuxiang Tang ◽  
Jun Zhang ◽  
Chenxi Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Optical Networks ◽  
Dominant Role ◽  
Laser Pulses ◽  
Coulomb Interactions ◽  
Optical Modulators ◽  
Dynamic Tuning ◽  
All Optical ◽  
Excitonic Emission

AbstractStrong quantum confinement and coulomb interactions induce tightly bound quasiparticles such as excitons and trions in an atomically thin layer of transitional metal dichalcogenides (TMDs), which play a dominant role in determining their intriguing optoelectronic properties. Thus, controlling the excitonic properties is essential for the applications of TMD-based devices. Here, we demonstrate the all-optical tuning of the local excitonic emission from a monolayer MoS2 hybridized with phase-change material Ge2Sb2Te5 (GST) thin film. By applying pulsed laser with different power on the MoS2/GST heterostructure, the peak energies of the excitonic emission of MoS2 can be tuned up to 40 meV, and the exciton/trion intensity ratio can be tuned by at least one order of magnitude. Raman spectra and transient pump-probe measurements show that the tunability originated from the laser-induced phase change of the GST thin film with charge transferring from GST to the monolayer MoS2. The dynamic tuning of the excitonic emission was all done with localized laser pulses and could be scaled readily, which pave a new way of controlling the excitonic emission in TMDs. Our findings could be potentially used as all-optical modulators or switches in future optical networks.

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