Light output enhancement of light-emitting diodes with photonic crystal structure

Author(s):  
Xiaoling Wang ◽  
Chunhui Niu ◽  
Zhehai Zhou
2013 ◽  
Vol 11 (6) ◽  
pp. 062302-62305
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Saijun Huang Saijun Huang ◽  
Zhicheng Ye Zhicheng Ye ◽  
Jiangang Lu Jiangang Lu ◽  
Yikai Su Yikai Su ◽  
Chaoping Chen Chaoping Chen ◽  
...  

2010 ◽  
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Hyoungwon Park ◽  
Joong-Yeon Cho ◽  
Ki-Yeon Yang ◽  
Jong Hyeob Baek ◽  
...  

2010 ◽  
Vol 96 (18) ◽  
pp. 181110 ◽  
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Chu-Young Cho ◽  
Se-Eun Kang ◽  
Ki Seok Kim ◽  
Sang-Jun Lee ◽  
Yong-Seok Choi ◽  
...  

2007 ◽  
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HaiYang Hu ◽  
Lin Lu ◽  
Wei Du ◽  
HongWei Liu ◽  
Qiang Kan ◽  
...  

2004 ◽  
Vol 85 (23) ◽  
pp. 5769-5771 ◽  
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Masayuki Fujita ◽  
Tetsuya Ueno ◽  
Kuniaki Ishihara ◽  
Takashi Asano ◽  
Susumu Noda ◽  
...  

2012 ◽  
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Min-Ki Kwon ◽  
Ja-Yeon Kim ◽  
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Wantea Lim ◽  
...  

2005 ◽  
Author(s):  
Masayuki Fujita ◽  
Takashi Asano ◽  
Susumu Noda ◽  
Hiroshi Ohata ◽  
Taishi Tsuji ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2200
Author(s):  
Po-Hsun Lei ◽  
Po-Chun Yang ◽  
Po-Chun Huang

We fabricated the photonic-crystal-structured p-GaN (PC-structured p-GaN) nanorods using the modified polystyrene nanosphere (PS NS) lithography method for InGaN/GaN green light-emitting diodes (LEDs) to enhance the light extraction efficiency (LEE). A modified PS NS lithography method including two-times spin-coating processes and the post-spin-coating heating treatment was used to obtain a self-assembly close-packed PS NS array of monolayer as a mask and then a partially dry etching process was applied to PS NS, SiO2, and p-GaN to form PC-structured p-GaN nanorods on the InGaN/GaN green LEDs. The light output intensity and LEE of InGaN/GaN green LEDs with the PC-structured p-GaN nanorods depend on the period, diameter, and height of PC-structured p-GaN nanorods. RSoft FullWAVE software based on the three-dimension finite-difference time-domain (FDTD) algorithm was used to calculate the LEE of InGaN/GaN green LEDs with PC-structured p-GaN nanorods of the varied period, diameter, and height. The optimal period, diameter, and height of PC-structured p-GaN nanorods are 150, 350, and 110 nm. The InGaN/GaN green LEDs with optimal PC-structured p-GaN nanorods exhibit an enhancement of 41% of emission intensity under the driving current of 20 mA as compared to conventional LED.


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