Large scale flash memory system (LSFMS) for photomask defect inspection machine

2010 ◽  
Author(s):  
Satoshi Yamamoto ◽  
Ravi Pai ◽  
Manish Ranade ◽  
Soumen Mondal ◽  
Sundeep Prabhu ◽  
...  
Keyword(s):  
Flash Memory ◽  
Large Scale ◽  
Memory System ◽  
Defect Inspection ◽  
Inspection Machine

A Model of Silicon Nanocrystal Nucleation and Growth on SiO2 by CVD

2004 ◽  
Vol 830 ◽  
Author(s):  
M. W. Stoker ◽  
T. P. Merchant ◽  
R. Rao ◽  
R. Muralidhar ◽  
S. Straub ◽  
...  
Keyword(s):  
Crystallite Size ◽  
Flash Memory ◽  
Silicon Nanocrystals ◽  
Large Scale ◽  
Process Development ◽  
Electron Tunneling ◽  
Nucleation And Growth ◽  
Scale Model ◽  
Size Distributions ◽  
Deposition Processes

ABSTRACTSilicon nanocrystals can be used in non-volatile memory devices to reduce susceptibility to charge loss via tunnel oxide defects, allowing scaling to smaller sizes than possible with conventional Flash memory technology. In order to optimize device performance, it is desirable to maximize the nanocrystal density and surface coverage, while maintaining sufficient inter-crystallite separation to limit electron tunneling between adjacent crystallites. Ideally, crystallite densities in excess of 1012cm-2 with relatively narrow particle size distributions must be obtained, posing a significant challenge for process development and control. In order to facilitate development of such a process, a rate-expression-based model has been developed for the nucleation and growth of silicon nanocrystals on SiO2 in a CVD process. The model addresses the phenomena of nucleation, growth, and coalescence and includes the effects of exclusion zones surrounding the growing nuclei. The model uses a phenomenological expression to describe the nucleation rate and assumes that following nucleation, crystallite growth is dominated by gas-phase deposition processes, analogous to CVD of polycrystalline silicon. The model-predicted time-evolutions of crystallite densities and crystallite size distributions are consistent with experimental distributions as measured by Scanning Electron Microscopy (SEM). By coupling the model to a reactor-scale model of polysilicon CVD, it is possible to predict variations in the crystallite size distributions at various locations across a wafer as a function of reactor settings (temperature, pressure, flow rates, etc…). This in turn can be used for process control and optimization in order to ensure uniform deposition of nanocrystals in a large-scale manufacturing environment.

Inplementation of an Efficient Parallel Multilevel Fast Multipole Algorithm

2012 ◽  
Vol 433-440 ◽  
pp. 4268-4272
Author(s):  
You Feng Chen ◽  
Dong Lin Su ◽  
Xiao Ying Zhao ◽  
Dan Dan Guo ◽  
Li Peng Deng
Keyword(s):  
Shared Memory ◽  
High Frequency ◽  
Large Scale ◽  
Memory System ◽  
Method Of Moment ◽  
Fast Multipole ◽  
Multilevel Fast Multipole Algorithm ◽  
Shared Memory System ◽  
Fast Multipole Algorithm

This paper is concerned with the implementation of the parallel multilevel fast multipole algorithm(MLFMA) for large scale electromagnetics simulation on shared-memory system. The algorithm is implemented on a method of moment discretisation of the electromagnetics scattering problems.The developed procesure is validated by compared to benchmarks defined by Electromagnetics Code Consortium(EMCC) .The procesure can evaluate large problemssuch as electromagnetics scattering of aircraft at high-frequency with up to several millions of unknowns.

On-chip optical sense strategy illustrated in the case of flash memory system

2016 ◽  
Author(s):  
Junfeng Song ◽  
Xianshu Luo ◽  
Yanzhe Tang ◽  
Chao Li ◽  
Lianxi Jia ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory System ◽  
On Chip
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