Terahertz nonlinear spectroscopy of free-carriers in direct bandgap semiconductors

Mapping Intimacies ◽

10.1117/12.858332 ◽

2010 ◽

Author(s):

L. Razzari ◽

F. Blanchard ◽

F. H. Su ◽

G. Sharma ◽

A. Ayesheshim ◽

...

Keyword(s):

Nonlinear Spectroscopy ◽

Direct Bandgap ◽

Free Carriers ◽

Bandgap Semiconductors

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Application of high power terahertz sources to nonlinear spectroscopy of direct bandgap semiconductors

2010 2nd IEEE International Workshop Thz Radiation: Basic Research and Applications ◽

10.1109/tera.2010.5619929 ◽

2010 ◽

Author(s):

R. Morandotti ◽

L. Razzari ◽

F. Blanchard ◽

F. H. Su ◽

G. Sharma ◽

...

Keyword(s):

High Power ◽

Nonlinear Spectroscopy ◽

Direct Bandgap ◽

Terahertz Sources ◽

Bandgap Semiconductors

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High power terahertz sources for nonlinear spectroscopy of direct bandgap semiconductors

2010 IEEE Photinic Society's 23rd Annual Meeting ◽

10.1109/photonics.2010.5698748 ◽

2010 ◽

Author(s):

R. Morandottia ◽

L. Razzari ◽

F. Blanchard ◽

F. H. Su ◽

G. Sharma ◽

...

Keyword(s):

High Power ◽

Nonlinear Spectroscopy ◽

Direct Bandgap ◽

Terahertz Sources ◽

Bandgap Semiconductors

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Phonon-assisted tunneling in direct-bandgap semiconductors

Journal of Applied Physics ◽

10.1063/1.5044256 ◽

2019 ◽

Vol 125 (1) ◽

pp. 015701 ◽

Cited By ~ 2

Author(s):

Mazharuddin Mohammed ◽

Anne S. Verhulst ◽

Devin Verreck ◽

Maarten L. Van de Put ◽

Wim Magnus ◽

...

Keyword(s):

Direct Bandgap ◽

Assisted Tunneling ◽

Bandgap Semiconductors

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Analytical approach to selection of the optimum structure of avalanche heterophotodiodes based on direct bandgap semiconductors

Journal of Communications Technology and Electronics ◽

10.1134/s1064226916030098 ◽

2016 ◽

Vol 61 (3) ◽

pp. 338-343 ◽

Cited By ~ 1

Author(s):

V. A. Kholodnov ◽

I. D. Burlakov ◽

A. A. Drugova

Keyword(s):

Analytical Approach ◽

Optimum Structure ◽

Direct Bandgap ◽

Bandgap Semiconductors ◽

Selection Of

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Optical properties of direct bandgap semiconductors : from bulk to low dimensional structures

10.5353/th_b5544000 ◽

2015 ◽

Author(s):

Xiaohu Wang

Keyword(s):

Optical Properties ◽

Direct Bandgap ◽

Bandgap Semiconductors ◽

Low Dimensional

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The Two-Dimensional AxCdxBi4–xQ6(A = K, Rb, Cs; Q = S, Se): Direct Bandgap Semiconductors and Ion-Exchange Materials

Journal of the American Chemical Society ◽

10.1021/jacs.7b02243 ◽

2017 ◽

Vol 139 (20) ◽

pp. 6978-6987 ◽

Cited By ~ 9

Author(s):

Jing Zhao ◽

Saiful M. Islam ◽

Oleg Y. Kontsevoi ◽

Gangjian Tan ◽

Constantinos C. Stoumpos ◽

...

Keyword(s):

Ion Exchange ◽

Two Dimensional ◽

Direct Bandgap ◽

Bandgap Semiconductors

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Decoupling recombination mechanisms and trap state localization in direct bandgap semiconductors using photoluminescence decay

Journal of Applied Physics ◽

10.1063/1.5001128 ◽

2017 ◽

Vol 122 (9) ◽

pp. 095705 ◽

Cited By ~ 2

Author(s):

M. W. Gerber ◽

R. N. Kleiman

Keyword(s):

Trap State ◽

Direct Bandgap ◽

Photoluminescence Decay ◽

Bandgap Semiconductors

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Generation of quantum states of light in nonlinear AlGaAs chips: engineering and applications

Photoniques ◽

10.1051/photon/202110728 ◽

2021 ◽

pp. 28-34

Author(s):

Sara Ducci ◽

Perola Milman ◽

Eleni Diamanti

Keyword(s):

Quantum States ◽

Secure Communications ◽

Long Distance ◽

Quantum Networks ◽

Direct Bandgap ◽

Wide Range ◽

Bandgap Semiconductors ◽

Complex Phenomena

Photonic quantum technologies represent a promising platform for applications ranging from long-distance secure communications to the simulation of complex phenomena. Among the different material platforms, direct bandgap semiconductors offer a wide range of functionalities opening promising perspectives for the implementation of future quantum technologies. In this paper, we review our progress on the generation and manipulation of quantum states of light in nonlinear AlGaAs chips and their use in quantum networks.

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