Electromagnetic propagation in multilayered nanomodified heavily doped Si:P systems

2010 ◽  
Author(s):  
Z. T. Kuznicki ◽  
M. Basta
Keyword(s):  
Electromagnetic Propagation ◽  
Heavily Doped

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

OPTICAL PROPERTIES OF HEAVILY DOPED POLYACETYLENE FILMS

1983 ◽  
Vol 44 (C3) ◽  
pp. C3-345-C3-348
Author(s):  
O. Bernard ◽  
M. Palpacuer ◽  
C. Benoit ◽  
M. Rolland ◽  
M. J.M. Abadie
Keyword(s):  
Optical Properties ◽  
Heavily Doped

Backside Emission Microscopy for Integrated Circuits on Heavily Doped Substrate

1998 ◽  
Author(s):  
Ching-Lang Chiang ◽  
Neeraj Khurana ◽  
Daniel T. Hurley ◽  
Ken Teasdale
Keyword(s):  
Integrated Circuits ◽  
Ccd Camera ◽  
Preparation Technique ◽  
Absorption Data ◽  
Ir Radiation ◽  
Heavily Doped ◽  
Emission Microscopy ◽  
Diffraction Patterns ◽  
Emission Detection ◽  
The Impact

Abstract Backside emission microscopy on heavily doped substrate materials was analyzed from the viewpoint of optical absorption by the substrate and sample preparation technique. Although it was widely believed that silicon is transparent to infrared (IR) radiation, we demonstrated by using published absorption data that silicon with doping levels above 5 x 1018cm-3 is virtually opaque, leaving only a narrow transmission window around the energy bandgap. Because the transmission depends exponentially on the thickness of die, thinning to below 100µm is shown to be required. Even an advanced IR sensor such as HgCdTe would find little light to detect without thinning the die. For imaging the circuit, an IR laser-based system produced poor images in which the diffraction patterns often ruined the contrast and obscured the image. Hence, a precise, controlled die thinning technique is required both for emission detection and backside imaging. A thinning and polishing technique was briefly described that was believed to be applicable to most ceramic packages. A software technique was employed to solve the image quality problem commonly encountered in backside imaging applications using traditional microscope light source and a scientific grade CCD camera. Finally, we showed the impact of die thickness on imaging circuits on a heavily doped n type substrate.

High Frequency Electromagnetic Propagation/Scattering

2000 ◽  
Author(s):  
Vladimir Oliker ◽  
Bjorn Engquist ◽  
Stanley Osher
Keyword(s):  
High Frequency ◽  
Electromagnetic Propagation

scholarly journals Ray Tracing Modeling of Electromagnetic Propagation for On-Chip Wireless Optical Communications

2018 ◽  
Vol 8 (4) ◽  
pp. 39 ◽  
Author(s):  
Franco Fuschini ◽  
Marina Barbiroli ◽  
Marco Zoli ◽  
Gaetano Bellanca ◽  
Giovanna Calò ◽  
...  
Keyword(s):  
Ray Tracing ◽  
Path Loss ◽  
Wireless Channel ◽  
Electromagnetic Propagation ◽  
Networks On Chip ◽  
Spatial Properties ◽  
Radiation Properties ◽  
Wireless Optical Communications ◽  
On Chip ◽  
The Relationship

Multi-core processors are likely to be a point of no return to meet the unending demand for increasing computational power. Nevertheless, the physical interconnection of many cores might currently represent the bottleneck toward kilo-core architectures. Optical wireless networks on-chip are therefore being considered as promising solutions to overcome the technological limits of wired interconnects. In this work, the spatial properties of the on-chip wireless channel are investigated through a ray tracing approach applied to a layered representation of the chip structure, highlighting the relationship between path loss, antenna positions and radiation properties.

Damping mechanism of terahertz plasmons in graphene on heavily doped substrate

2014 ◽  
Vol 115 (10) ◽  
pp. 104501 ◽  
Author(s):  
A. Satou ◽  
Y. Koseki ◽  
V. Ryzhii ◽  
V. Vyurkov ◽  
T. Otsuji
Keyword(s):  
Heavily Doped
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