Terahertz pulse detection by the GaAs Schottky diodes

2010 ◽  
Author(s):  
Tina Laperashvili ◽  
Orest Kvitsiani ◽  
Ilia Imerlishvili ◽  
David Laperashvili
Keyword(s):  
Schottky Diodes ◽  
Terahertz Pulse ◽  
Pulse Detection

Measurement and calculation of the orientation dependence of terahertz pulse detection in ZnTe

2001 ◽  
Vol 18 (3) ◽  
pp. 313 ◽  
Author(s):  
Paul C. M. Planken ◽  
Han-Kwang Nienhuys ◽  
Huib J. Bakker ◽  
Tom Wenckebach
Keyword(s):  
Orientation Dependence ◽  
Terahertz Pulse ◽  
Pulse Detection

scholarly journals Carbon irradiated semi insulating GaAs for photoconductive terahertz pulse detection

2015 ◽  
Vol 23 (5) ◽  
pp. 6656 ◽  
Author(s):  
Abhishek Singh ◽  
Sanjoy Pal ◽  
Harshad Surdi ◽  
S. S. Prabhu ◽  
S. Mathimalar ◽  
...  
Keyword(s):  
Terahertz Pulse ◽  
Pulse Detection

Terahertz Pulse Detection Using Rotary Optical Delay Line

2007 ◽  
Vol 46 (11) ◽  
pp. 7332-7335 ◽  
Author(s):  
Geun-Ju Kim ◽  
Seok-Gy Jeon ◽  
Jung-Il Kim ◽  
Yun-Sik Jin
Keyword(s):  
Delay Line ◽  
Terahertz Pulse ◽  
Optical Delay Line ◽  
Pulse Detection ◽  
Optical Delay

Schottky diodes based on 2D materials for environmental gas monitoring: a review on emerging trends, recent developments and future perspectives

2021 ◽  
Author(s):  
Minu Mathew ◽  
Chandra Sekhar Rout
Keyword(s):  
Gas Sensing ◽  
2D Materials ◽  
Schottky Diodes ◽  
High Sensitivity ◽  
Future Perspectives ◽  
Working Temperature ◽  
Emerging Trends ◽  
Gas Sensing Properties ◽  
Recent Developments ◽  
Sensitivity And Selectivity

This review details the fundamentals, working principles and recent developments of Schottky junctions based on 2D materials to emphasize their improved gas sensing properties including low working temperature, high sensitivity, and selectivity.

Methodology for Analysis of Schottky Diode Failures

2010 ◽  
Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek
Keyword(s):  
Failure Mode ◽  
Schottky Diode ◽  
Failure Modes ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Forward Voltage ◽  
Fast Switching ◽  
Voltage Drops ◽  
The Common

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.

The Use of TMAH to Etch Silicon and Expose Metal Bridging Failures

2000 ◽  
Author(s):  
Mark Morris ◽  
James Mohr ◽  
Esteban Ortiz ◽  
Steven Englebretson
Keyword(s):  
Failure Mechanism ◽  
Schottky Diodes ◽  
Tetramethylammonium Hydroxide ◽  
Novel Approach ◽  
Failure Location ◽  
Metal Etching ◽  
Plastic Mold

Abstract Determination of metal bridging failures on plastic encapsulated devices is difficult due to the metal etching effects that occur while removing many of the plastic mold compounds. Typically, the acids used to remove the encapsulation are corrosive to the metals that are found within the device. Thus, decapsulation can result in removal of the failure mechanism. Mechanical techniques are often not successful due to damage that results in destruction of the die and failure mechanism. This paper discusses a novel approach to these types of failures using a silicon etch and a backside evaluation. The desirable characteristics of the technique would be to remove the silicon and leave typical device metals unaffected. It would also be preferable that the device passivation and oxides not be etched so that the failure location is not disturbed. The use of Tetramethylammonium Hydroxide (TMAH), was found to fit these prerequisites. The technique was tested on clip attached Schottky diodes that exhibited resistive shorting. The use of the TMAH technique was successful at exposing thin solder bridges that extruded over the edge of the die resulting in failure.

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