Failure mechanism of epoxy polymer: transition from ductile to brittle failure

2009 ◽  
Author(s):  
Wei Wu ◽  
Guowei Ma
2010 ◽  
Vol 53 (4) ◽  
pp. 611-626 ◽  
Author(s):  
Si-Qing QIN ◽  
Xi-Wei XU ◽  
Ping HU ◽  
Yuan-Yuan WANG ◽  
Xin HUANG ◽  
...  

2014 ◽  
Vol 2014 ◽  
pp. 1-15 ◽  
Author(s):  
Sang-Sup Lee ◽  
Jiho Moon ◽  
Keum-Sung Park ◽  
Kyu-Woong Bae

The punching shear failure often governs the strength of the footing-to-column connection. The punching shear failure is an undesirable failure mode, since it results in a brittle failure of the footing. In this study, a new method to increase the strength and ductility of the footing was proposed by inserting the punching shear preventers (PSPs) into the footing. The validation and effectiveness of PSP were verified through a series of experimental studies. The nonlinear finite element analysis was then performed to demonstrate the failure mechanism of the footing with PSPs in depth and to investigate the key parameters that affect the behavior of the footing with PSPs. Finally, the design recommendations for the footing with PSPs were suggested.


2015 ◽  
Vol 27 (18) ◽  
pp. 6329-6336 ◽  
Author(s):  
Guodong Li ◽  
Qi An ◽  
Wenjuan Li ◽  
William A. Goddard ◽  
Pengcheng Zhai ◽  
...  

Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.


2008 ◽  
Vol 11 (-1) ◽  
pp. 188-201 ◽  
Author(s):  
Piotr Bogacz ◽  
Jarosława Kaczmarek ◽  
Danuta Leśniewska

Alloy Digest ◽  
1984 ◽  
Vol 33 (12) ◽  

Abstract Alloy Steel 3.5Ni-1.8Cr-0.4Mo-0.1V is highly suitable for massive components, usually more than four inches thick. It has high hardenability which in a water-spray or water-immersion quench contributes to the formation of sizeable amounts of martensite along with some bainite, and possibly a little ferrite. On tempering, the martensite adds to toughness and lowers the temperature of transition from tough to brittle failure. This steel is suitable for intermediate-duty and heavy-duty generator and turbine rotors, large axles and shafts, large gears and ship forgings. This datasheet provides information on composition, physical properties, elasticity, and tensile properties as well as fracture toughness. It also includes information on corrosion resistance as well as forming, heat treating, and machining. Filing Code: SA-404. Producer or source: Alloy steel mills and foundries.


Author(s):  
William Ng ◽  
Kevin Weaver ◽  
Zachary Gemmill ◽  
Herve Deslandes ◽  
Rudolf Schlangen

Abstract This paper demonstrates the use of a real time lock-in thermography (LIT) system to non-destructively characterize thermal events prior to the failing of an integrated circuit (IC) device. A case study using a packaged IC mounted on printed circuit board (PCB) is presented. The result validated the failing model by observing the thermal signature on the package. Subsequent analysis from the backside of the IC identified a hot spot in internal circuitry sensitive to varying value of external discrete component (inductor) on PCB.


Author(s):  
Sarven Ipek ◽  
David Grosjean

Abstract The application of an individual failure analysis technique rarely provides the failure mechanism. More typically, the results of numerous techniques need to be combined and considered to locate and verify the correct failure mechanism. This paper describes a particular case in which different microscopy techniques (photon emission, laser signal injection, and current imaging) gave clues to the problem, which then needed to be combined with manual probing and a thorough understanding of the circuit to locate the defect. By combining probing of that circuit block with the mapping and emission results, the authors were able to understand the photon emission spots and the laser signal injection microscopy (LSIM) signatures to be effects of the defect. It also helped them narrow down the search for the defect so that LSIM on a small part of the circuit could lead to the actual defect.


Author(s):  
John Butchko ◽  
Bruce T. Gillette

Abstract Autoclave Stress failures were encountered at the 96 hour read during transistor reliability testing. A unique metal corrosion mechanism was found during the failure analysis, which was creating a contamination path to the drain source junction, resulting in high Idss and Igss leakage. The Al(Si) top metal was oxidizing along the grain boundaries at a faster rate than at the surface. There was subsurface blistering of the Al(Si), along with the grain boundary corrosion. This blistering was creating a contamination path from the package to the Si surface. Several variations in the metal stack were evaluated to better understand the cause of the failures and to provide a process solution. The prevention of intergranular metal corrosion and subsurface blistering during autoclave testing required a materials change from Al(Si) to Al(Si)(Cu). This change resulted in a reduced corrosion rate and consequently prevented Si contamination due to blistering. The process change resulted in a successful pass through the autoclave testing.


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