scholarly journals In-service monitoring of steam pipe systems at high temperatures

2010 ◽  
Author(s):  
Yoseph Bar-Cohen ◽  
Shyh-Shiuh Lih ◽  
Mircea Badescu ◽  
Xiaoqi Bao ◽  
Stewart Sherrit ◽  
...  
Keyword(s):  
High Temperatures ◽  
Service Monitoring ◽  
Steam Pipe ◽  
Pipe Systems

High temperatures health monitoring of the condensed water height in steam pipe systems

2013 ◽  
Author(s):  
Hyeong Jae Lee ◽  
Yoseph Bar-Cohen ◽  
Shyh-Shiuh Lih ◽  
Mircea Badescu ◽  
Xiaoqi Bao ◽  
...  
Keyword(s):  
High Temperatures ◽  
Health Monitoring ◽  
Condensed Water ◽  
Steam Pipe ◽  
Pipe Systems ◽  
Water Height

In situ REM imaging of surface processes on ceramic bulk crystals from 300 to 1670 K in a conventional TEM

1991 ◽  
Vol 49 ◽  
pp. 660-661
Author(s):  
Z. L. Wang ◽  
J. Bentley
Keyword(s):  
High Temperatures ◽  
Image Resolution ◽  
Atomic Processes ◽  
Crystal Surfaces ◽  
Beam Radiation ◽  
Surface Areas ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Gas Reactions

Studying the behavior of surfaces at high temperatures is of great importance for understanding the properties of ceramics and associated surface-gas reactions. Atomic processes occurring on bulk crystal surfaces at high temperatures can be recorded by reflection electron microscopy (REM) in a conventional transmission electron microscope (TEM) with relatively high resolution, because REM is especially sensitive to atomic-height steps.Improved REM image resolution with a FEG: Cleaved surfaces of a-alumina (012) exhibit atomic flatness with steps of height about 5 Å, determined by reference to a screw (or near screw) dislocation with a presumed Burgers vector of b = (1/3)<012> (see Fig. 1). Steps of heights less than about 0.8 Å can be clearly resolved only with a field emission gun (FEG) (Fig. 2). The small steps are formed by the surface oscillating between the closely packed O and Al stacking layers. The bands of dark contrast (Fig. 2b) are the result of beam radiation damage to surface areas initially terminated with O ions.

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