1.54 μm emitter and optical amplifier based on Er doped InGaN/GaN

AbstractErbium-doped planar optical amplifiers can find numerous applications in photonic integrated circuits operating at 1.5 μm. The challenge is to fabricate these devices with high gain, operating at low pump power, and having small overall size. In this paper a review is given of our recent work in the area of Er-doped waveguide materials and amplifiers based on three materials classes: oxide films (A12O3, Y2O3, SiO2), polymers, and silicon.

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Luminescence Properties of a Multi-Component Glass Co-Implanted with Si and Er

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.99-100.37 ◽

2004 ◽

Vol 99-100 ◽

pp. 37-40

Author(s):

F. Enrichi ◽

G. Mattei ◽

C. Sada ◽

E. Trave ◽

Elisabetta Borsella ◽

...

Keyword(s):

Energy Transfer ◽

Transfer Process ◽

Optical Amplifiers ◽

Energy Transfer Process ◽

Optical Amplifier ◽

Silica Substrate ◽

Annealing Temperatures ◽

Infrared Luminescence ◽

Er Doped ◽

Post Implantation

The incorporation of Si-nc in Er doped silica is known to strongly enhance the infrared luminescence of Er3+ at 1.54µm. The enhancement is believed to be due to an energy transfer process from Si-nc to Er. In this work we investigate the formation of Si nano-aggregates and their role in the energy transfer process to Er3+ ions for a multi-component glass host. These materials can offer better performances than silica in terms of Er solubility and band broadness for integrated Er-doped optical amplifiers and investigation is therefore very interesting for optoelectronic applications. Si and Er were co-implanted by choosing the implantation energies in order to optimize the overlap between the concentration profiles. The precipitation of Si and the enhancement of the 1.54 µm Er emission were studied for different post-implantation annealing temperatures. In particular the optical properties of the glass were investigated by means of photoluminescence (PL) spectroscopy and the results are discussed in relation to a standard silica substrate. These data are presented and related to the structural properties of the material. Moreover the implications on the future development of an Er doped optical amplifier are discussed.

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Low-cost bidirectional optical amplifier using a unidirectional Er-doped fiber amplifier and a fiber Mach-Zehnder interferometer

IEEE Photonics Technology Letters ◽

10.1109/68.903226 ◽

2001 ◽

Vol 13 (1) ◽

pp. 76-78 ◽

Cited By ~ 7

Author(s):

Seung-Tak Lee ◽

C.-J. Chae

Keyword(s):

Low Cost ◽

Fiber Amplifier ◽

Optical Amplifier ◽

Zehnder Interferometer ◽

Er Doped ◽

Mach Zehnder Interferometer

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41-nm 3-dB gain-band optical amplifier using an Er-doped core and Sm-doped inner-cladding fiber without external filters

IEEE Photonics Technology Letters ◽

10.1109/68.867983 ◽

2000 ◽

Vol 12 (8) ◽

pp. 986-988 ◽

Cited By ~ 4

Author(s):

Seungtaek Kim ◽

Uh-Chan Ryu ◽

K. Oh

Keyword(s):

Optical Amplifier ◽

Er Doped

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Limitations Due to Er-Doped Optical Amplifier Noise and Stimulated Raman Scattering in Optic-Frequency Division Multiplexed Communications

Fiber & Integrated Optics ◽

10.1080/014680399244677 ◽

1999 ◽

Vol 18 (3) ◽

pp. 179-187 ◽

Cited By ~ 2

Author(s):

Salim Tariq

Keyword(s):

Raman Scattering ◽

Stimulated Raman Scattering ◽

Optical Amplifier ◽

Frequency Division ◽

Amplifier Noise ◽

Er Doped ◽

Stimulated Raman

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Microscopic Structure of Er-Related Optically Active Centers in Si

MRS Proceedings ◽

10.1557/proc-770-i7.1 ◽

2003 ◽

Vol 770 ◽

Author(s):

H. Przybylinska ◽

N. Q. Vinh ◽

B.A. Andreev ◽

Z. F. Krasil'nik ◽

T. Gregorkiewicz

Keyword(s):

Ground State ◽

Photoluminescence Spectrum ◽

Zeeman Effect ◽

Optically Active ◽

Single Type ◽

Active Centers ◽

Mbe Growth ◽

Spectral Components ◽

Er Doped ◽

Successful Observation

AbstractA successful observation and analysis of the Zeeman effect on the near 1.54 μm photoluminescence spectrum in Er-doped crystalline MBE-grown silicon are reported. A clearly resolved splitting of 5 major spectral components was observed in magnetic fields up to 5.5 T. Based on the analysis of the data the symmetry of the dominant optically active center was conclusively established as orthorhombic I (C2v), with g‼≈18.4 and g⊥≈0 in the ground state. The fact that g⊥≈0 explains why EPR detection of Er-related optically active centers in silicon may be difficult. Preferential generation of a single type of an optically active Er-related center in MBE growth confirmed in this study is essential for photonic applications of Si:Er.

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