High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes

Author(s):  
James W. Raring ◽  
Eric M. Hall ◽  
Mathew C. Schmidt ◽  
Christiane Poblenz ◽  
Ben Li ◽  
...  
1994 ◽  
Vol 347 ◽  
Author(s):  
M. S. Worthington ◽  
Guilford R. MacPhail

AbstractThe use of microwave energy for industrial processing applications has been ongoing since the early 1950's. A number of high power tubes were developed in the mid-1960's at 805, 915 and 2,450 MHz for industrial uses. One super power crossed-field amplifier (CFA), the QKS1262, was available in either 50 or 100 kW continuous wave (CW) format. This CFA was designed with a platinum emitter which was pulse started with 100 W average power. The CFA operates at ∼20 kV at 5 amps (50 kW - CW output) or 10 amps (100 kW - CW output/65% efficiency).This paper will describe the operating characteristics of the QKS1262 and the options in design to attain high power with high efficiency and long life (25,000 hours).


Author(s):  
Chamssedine Berrached ◽  
Diane Bouw ◽  
Marc Camiade ◽  
Kassem El-Akhdar ◽  
Denis Barataud ◽  
...  

In this paper, the designs and experimental performances of wideband (higher than one octave) high-efficiency, high-power amplifiers (HPA) working in the 1–4 GHz range, using the same GaN process, are presented. They are based on the Bode–Fano integrals, which can be applied to a trade-off calculation between bandwidth and efficiency. Firstly, an microwave intregrated circuits (MIC) wideband HPA, externally matched, is presented. It generates a continuous wave (CW) output power (Pout) greater than 40 W, a power gain (GP) higher than 9.2 dB and a corresponding power added efficiency (PAE) (drain efficiency (DE)) ranged between 36 and 44% (40 and 48%) over the 1–3 GHz bandwidth. Two other amplifiers have been designed upon the same theoretical methodology, with a passive GaAs MMIC circuit technology, enabling to reduce the final size down to 420 mm2. The first internally matched Quasi monolithic microwave intergrated circuits (Quasi-MMIC) single-ended HPA generates a pulsed Pout greater than 25 W, GP higher than 9.8 dB, and a corresponding PAE (DE) ranged between 37 and 52.5% (40 and 55%) over the 2–4 GHz bandwidth. The second internally matched Quasi-MMIC HPA, based on balanced architecture, generates a pulsed Pout higher than 45 W, GP higher than 9.5 dB and PAE (DE) ranged between 33 and 44% (38 and 50%) over the 2–4 GHz bandwidth. These results are among the best ones published in terms of PAE and Pout in instantaneous octave bandwidth in the 1–4 GHz frequency range.


2003 ◽  
Vol 9 (5) ◽  
pp. 1260-1264 ◽  
Author(s):  
T. Yagi ◽  
H. Nishiguchi ◽  
Y. Yoshida ◽  
M. Miyashita ◽  
M. Sasaki ◽  
...  

2012 ◽  
Vol 5 (6) ◽  
pp. 062101 ◽  
Author(s):  
Sumiko Fujisaki ◽  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Shigehisa Tanaka ◽  
Shinji Tsuji ◽  
...  

2017 ◽  
Vol 97 ◽  
pp. 297-301 ◽  
Author(s):  
Zhenfu Wang ◽  
Te Li ◽  
Guowen Yang ◽  
Yunfei Song

2009 ◽  
Vol 97 (3) ◽  
pp. 639-643 ◽  
Author(s):  
X. Cheng ◽  
F. Chen ◽  
G. Zhao ◽  
J. Xu

2004 ◽  
Author(s):  
Victor Rossin ◽  
Erik Zucker ◽  
Matthew Peters ◽  
Matthew Everett ◽  
Bruno Acklin

2006 ◽  
Author(s):  
Steve Patterson ◽  
Paul Crump ◽  
Jun Wang ◽  
Weimin Dong ◽  
Mike Grimshaw ◽  
...  

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