Effect of Te inclusions on internal electric field of CdMnTe gamma-ray detector

2009 ◽  
Author(s):  
Oluseyi Stephen Babalola ◽  
Aleksey E. Bolotnikov ◽  
Stephen U. Egarievwe ◽  
Anwar M. Hossain ◽  
Arnold Burger ◽  
...  
Keyword(s):  
Electric Field ◽  
Gamma Ray ◽  
Internal Electric Field ◽  
Te Inclusions ◽  
Gamma Ray Detector

scholarly journals Investigation of Deep Levels in CdZnTeSe Crystal and Their Effect on the Internal Electric Field of CdZnTeSe Gamma-Ray Detector

2019 ◽  
Vol 66 (8) ◽  
pp. 1952-1958 ◽  
Author(s):  
M. Rejhon ◽  
V. Dedic ◽  
L. Beran ◽  
U. N. Roy ◽  
J. Franc ◽  
...  
Keyword(s):  
Electric Field ◽  
Gamma Ray ◽  
Deep Levels ◽  
Internal Electric Field ◽  
Gamma Ray Detector

scholarly journals Mapping of inhomogeneous quasi-3D electrostatic field in electro-optic materials

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Václav Dědič ◽  
Tomáš Fridrišek ◽  
Jan Franc ◽  
Jan Kunc ◽  
Martin Rejhon ◽  
...  
Keyword(s):  
Electric Field ◽  
Gamma Ray ◽  
Evaluation Procedure ◽  
Internal Electric Field ◽  
Pockels Effect ◽  
Light Passing ◽  
Electro Optic ◽  
Using Data ◽  
Measurement And Evaluation ◽  
Gamma Ray Detector

AbstractThis paper describes a new method for direct measurement and evaluation of the inhomogeneous electrostatic vector field with translational symmetry in electro-optic materials exhibiting the Pockels effect. It is based on the evaluation of maximum transmittance of low intensity light passing through a sample under a voltage bias. Here, the sample is located between rotating crossed polarizers, and camera images are obtained at each point to determine the electric field. The evaluation procedure is demonstrated using data acquired on a CdZnTeSe quasi-hemispheric semiconductor gamma-ray detector. In addition to CdTe-related compounds, the method can be used for various other materials showing $$\overline{4}3m$$ 4 ¯ 3 m symmetry such as GaAs, CdTe, GaP, 3C-SiC, and ZnS. Furthermore, it can be generalized to other crystalline materials showing the Pockels effect. The method can be used to probe the space charge and the electric field in several kinds of electronic components and devices, as well as provide useful data on the role of defects, contact configurations and other surface and bulk inhomogeneities in the material that can affect the distribution of the internal electric field.

Device Simulation of a Unipolar Gamma-Ray Detector

1997 ◽  
Vol 487 ◽  
Author(s):  
E. Y. Lee ◽  
J. C. Lund ◽  
N. R. Hilton ◽  
B. A. Brunett ◽  
R. B. James
Keyword(s):  
Gamma Ray ◽  
Three Dimensional ◽  
Pulse Height ◽  
Device Simulation ◽  
Design Parameters ◽  
Internal Electric Field ◽  
Successive Overrelaxation ◽  
Detector Performance ◽  
Dimensional Simulation ◽  
Gamma Ray Detector

AbstractThe pulse height spectra from a new kind of unipolar gamma-ray detectors were predicted using a new three-dimensional simulation program developed at Sandia National Laboratories. The detectors were fabricated at Sandia and RMD Inc., and tested at Sandia. They were fabricated from Cd1-x.ZnxTe crystals and they were electron-transport-only devices. For the simulation, a successive overrelaxation method was used to determine the three-dimensional internal electric field within a detector, and to find the weighting potentials for the anode and the cathode. Uniform irradiation and ionization from a 137Cs source was assumed, and the charge transport and the signal induction within the detector were numerically computed using the appropriate materials and design parameters. The simulation gave excellent agreement with experimental pulse height spectra, and it demonstrated the power of such a simulation to correlate the materials parameters and the device design to the actual detector performance.

Effect of the double grading on the internal electric field and on the carrier collection in CIGS solar cells

2021 ◽  
Vol 223 ◽  
pp. 110948
Author(s):  
Alban Lafuente-Sampietro ◽  
Katsuhisa Yoshida ◽  
Shenghao Wang ◽  
Shogo Ishizuka ◽  
Hajime Shibata ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Internal Electric Field ◽  
Carrier Collection ◽  
Cigs Solar Cells
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