Bio-inspired synthesis and laser processing of nanostructured barium titanate thin films: implications for uncooled IR sensor development

2009 ◽  
Author(s):  
F. E. Livingston ◽  
W. L. Sarney ◽  
K. Niesz ◽  
T. Ould-Ely ◽  
A. R. Tao ◽  
...  
Keyword(s):  
Thin Films ◽  
Barium Titanate ◽  
Laser Processing ◽  
Sensor Development ◽  
Ir Sensor

FS laser processing of bio-polymer thin films for studying cell-to-substrate specific response

2016 ◽  
Vol 382 ◽  
pp. 178-191 ◽  
Author(s):  
A. Daskalova ◽  
Chandra S.R. Nathala ◽  
P. Kavatzikidou ◽  
A. Ranella ◽  
R. Szoszkiewicz ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Processing ◽  
Polymer Thin Films ◽  
Specific Response ◽  
Fs Laser

Pulsed excimer laser ablated barium titanate thin films

1992 ◽  
Vol 61 (17) ◽  
pp. 2057-2059 ◽  
Author(s):  
D. Roy ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Barium Titanate ◽  
Excimer Laser

Dielectric Properties of Nanocrystalline Barium Titanate Thin Films Deposited by RF Magnetron Sputtering

2003 ◽  
Vol 42 (Part 1, No. 2A) ◽  
pp. 544-548 ◽  
Author(s):  
Chi-Shiung Hsi ◽  
Fu-Yuan Hsiao ◽  
Nan-Chung Wu ◽  
Moo-Chin Wang
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Barium Titanate ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering

Single-crystal barium titanate thin films by ion slicing

2003 ◽  
Vol 82 (4) ◽  
pp. 616-618 ◽  
Author(s):  
T. Izuhara ◽  
I.-L. Gheorma ◽  
R. M. Osgood ◽  
A. N. Roy ◽  
H. Bakhru ◽  
...  
Keyword(s):  
Thin Films ◽  
Barium Titanate ◽  
Single Crystal

Pulsed Excimer Laser Processing of AlN/GaN Thin Films

1996 ◽  
Vol 449 ◽  
Author(s):  
W. S. Wong ◽  
L. F. Schloss ◽  
G.S. Sudhir ◽  
B. P. Linder ◽  
K-M. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Laser Processing ◽  
Laser Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Emission Peak ◽  
Dopant Activation ◽  
Pulsed Laser Annealing

ABSTRACTA KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

Sign in / Sign up

Export Citation Format

Share Document