Comparative time resolved shadowgraphic imaging studies of nanosecond and picosecond laser transfer of organic materials

Author(s):  
Ludovic Rapp ◽  
Christophe Cibert ◽  
Anne Patricia Alloncle ◽  
Philippe Delaporte ◽  
Sebastien Nenon ◽  
...  
Author(s):  
Dan Bodoh ◽  
Kent Erington ◽  
Kris Dickson ◽  
George Lange ◽  
Carey Wu ◽  
...  

Abstract Laser-assisted device alteration (LADA) is an established technique used to identify critical speed paths in integrated circuits. LADA can reveal the physical location of a speed path, but not the timing of the speed path. This paper describes the root cause analysis benefits of 1064nm time resolved LADA (TR-LADA) with a picosecond laser. It shows several examples of how picosecond TR-LADA has complemented the existing fault isolation toolset and has allowed for quicker resolution of design and manufacturing issues. The paper explains how TR-LADA increases the LADA localization resolution by eliminating the well interaction, provides the timing of the event detected by LADA, indicates the propagation direction of the critical signals detected by LADA, allows the analyst to infer the logic values of the critical signals, and separates multiple interactions occurring at the same site for better understanding of the critical signals.


2020 ◽  
Vol 22 (9) ◽  
pp. 4993-5001 ◽  
Author(s):  
Anna Rosa Ziefuss ◽  
Stefan Reich ◽  
Sven Reichenberger ◽  
Matteo Levantino ◽  
Anton Plech

The structural and energetic pathway of picosecond laser fragmentation of gold colloids has been clarified by time-resolved X-ray scattering.


1997 ◽  
Author(s):  
G. Urbasch ◽  
F. Billmann ◽  
Juergen Jandeleit ◽  
P. Russbueldt ◽  
Hans-Georg Treusch ◽  
...  

1983 ◽  
Vol 13 ◽  
Author(s):  
P. H. Bucksbaum ◽  
J. Bokor

ABSTRACTFast regrowth of amorphous silicon from liquid silicon films has been directly observed in a time resolved picosecond laser melting experiment. Liquid films up to 100 nm thick were formed on crystalline substrates with 15 picosecond 248 nm pulses from a KrF* excimer laser. The film thickness as a function of time was probed directly by observing attenuation of 1.64 pm 15 psec light pulses transmitted through the melt. Melting and regrowth velocities were compared to a heat diffusion model, and evidence for melt undercooling was observed. The resolidified silicon was amorphous at all values of incident laser intensity.


2005 ◽  
Vol 247 (1-4) ◽  
pp. 584-589 ◽  
Author(s):  
I. Zergioti ◽  
A. Karaiskou ◽  
D.G. Papazoglou ◽  
C. Fotakis ◽  
M. Kapsetaki ◽  
...  

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