Infrared of thin film graphene in a magnetic field and the Hall effect

2008 ◽  
Author(s):  
Keshav N. Shrivastava
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Hall Effect

scholarly journals Strain-induced spontaneous Hall effect in an epitaxial thin film of a Luttinger semimetal

2019 ◽  
Vol 116 (18) ◽  
pp. 8803-8808 ◽  
Author(s):  
Takumi Ohtsuki ◽  
Zhaoming Tian ◽  
Akira Endo ◽  
Mario Halim ◽  
Shingo Katsumoto ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Hall Effect ◽  
Temperature Scale ◽  
Spontaneous Magnetization ◽  
Chiral Anomaly ◽  
Epitaxial Thin Film ◽  
Negative Contribution ◽  
Weyl Semimetal ◽  
Brillouin Zone Center

Pyrochlore iridates have provided a plethora of novel phenomena owing to the combination of topology and correlation. Among them, much attention has been paid to Pr2Ir2O7, as it is known as a Luttinger semimetal characterized by quadratic band touching at the Brillouin zone center, suggesting that the topology of its electronic states can be tuned by a moderate lattice strain and external magnetic field. Here, we report that our epitaxial Pr2Ir2O7 thin films grown by solid-state epitaxy exhibit a spontaneous Hall effect that persists up to 50 K without having spontaneous magnetization within our experimental accuracy. This indicates that the system breaks the time reversal symmetry at a temperature scale that is too high for the magnetism to be due to Pr 4f moments and must be related to magnetic order of the iridium 5d electrons. Moreover, our analysis finds that the chiral anomaly induces the negative contribution to the magnetoresistance only when a magnetic field and the electric current are parallel to each other. Our results indicate that the strained part of the thin film forms a magnetic Weyl semimetal state.

scholarly journals Moving Pearl Vortices in Thin-Film Superconductors

2021 ◽  
Vol 6 (1) ◽  
pp. 4
Author(s):  
Vladimir Kogan ◽  
Norio Nakagawa
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Time Dependent ◽  
Superconducting Thin Film ◽  
Self Energy ◽  
London Equation ◽  
The Magnetic Field

The magnetic field hz of a moving Pearl vortex in a superconducting thin-film in (x,y) plane is studied with the help of the time-dependent London equation. It is found that for a vortex at the origin moving in +x direction, hz(x,y) is suppressed in front of the vortex, x>0, and enhanced behind (x<0). The distribution asymmetry is proportional to the velocity and to the conductivity of normal quasiparticles. The vortex self-energy and the interaction of two moving vortices are evaluated.

scholarly journals The quantum Hall effect in the absence of disorder

2021 ◽  
Vol 6 (1) ◽  
Author(s):  
Kyung-Su Kim ◽  
Steven A. Kivelson
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Finite Interval ◽  
Quantum Hall ◽  
Wigner Crystal ◽  
Quasi Particle ◽  
Hall Conductance ◽  
Finite Extent

AbstractIt is widely held that disorder is essential to the existence of a finite interval of magnetic field in which the Hall conductance is quantized, i.e., for the existence of “plateaus” in the quantum Hall effect. Here, we show that the existence of a quasi-particle Wigner crystal (QPWC) results in the persistence of plateaus of finite extent even in the limit of vanishing disorder. Several experimentally detectable features that characterize the behavior in the zero disorder limit are also explored.

The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

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