Negative magnetoresistance due to weak localization and electron-electron interactions effects in metallic n-type InP semiconductor at very low temperatures with magnetic field
Keyword(s):
Keyword(s):
2002 ◽
Vol 16
(20n22)
◽
pp. 3216-3219
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1978 ◽
Vol 39
(C6)
◽
pp. C6-816-C6-816
◽
1981 ◽
Vol 42
(C5)
◽
pp. C5-689-C5-693
1997 ◽
Vol 30
(4)
◽
pp. 1059-1068
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