Comparative study of primary and secondary tumors from patients with laryngeal and oropharyngeal cancer, using transmission electron microscopy

2008 ◽  
Author(s):  
Ligia Gabriela Ghetea ◽  
Ana-Maria Niculescu ◽  
Rozalia Magda Motoc ◽  
Grigore Mihaescu ◽  
Virgil-Florin Duma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Comparative Study ◽  
Oropharyngeal Cancer ◽  
Secondary Tumors ◽  
Transmission Electron

Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High in Content

1999 ◽  
Vol 595 ◽  
Author(s):  
A. Vantomme ◽  
M.F. Wu ◽  
S. Hogg ◽  
G. Langouche ◽  
K. Jacobs ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Comparative Study ◽  
Structural Properties ◽  
Rutherford Backscattering ◽  
Cross Sectional ◽  
Indium Concentration ◽  
Transmission Electron ◽  
Peak Energy

AbstractRutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RBS) were mapped at a large numberof distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nm, strongly suggesting that the lightemitting regions of the sample are very indium-rich compared to the average measured by RBS. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm. The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.

Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

2000 ◽  
Vol 5 (S1) ◽  
pp. 703-709
Author(s):  
A. Vantomme ◽  
M.F. Wu ◽  
S. Hogg ◽  
G. Langouche ◽  
K. Jacobs ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Comparative Study ◽  
Structural Properties ◽  
Rutherford Backscattering ◽  
Cross Sectional ◽  
Light Emitting ◽  
Indium Concentration ◽  
Transmission Electron ◽  
Peak Energy

Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RBS) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nm, strongly suggesting that the light-emitting regions of the sample are very indium-rich compared to the average measured by RBS. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm. The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.

Soft X-ray contact microscopy and transmission electron microscopy: Comparative study of biological samples

2003 ◽  
Vol 104 ◽  
pp. 345-348 ◽  
Author(s):  
T. Limongi ◽  
L. Palladino ◽  
E. Bernieri ◽  
G. Tomassetti ◽  
L. Reale ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Comparative Study ◽  
Biological Samples ◽  
X Ray ◽  
Transmission Electron
Sign in / Sign up

Export Citation Format

Share Document