Porous silicon near room temperature nanosensor covered by TiO 2 or ZnO thin films

2008 ◽  
Author(s):  
Vladimir M. Aroutiounian ◽  
Valery M. Arakelyan ◽  
Vardan Galstyan ◽  
Khachatur Martirosyan ◽  
Patrick Soukiassian
Keyword(s):  
Thin Films ◽  
Porous Silicon ◽  
Room Temperature ◽  
Zno Thin Films

Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

2015 ◽  
Vol 117 (17) ◽  
pp. 17B901 ◽  
Author(s):  
Yu-Min Hu ◽  
Sih-Sian Li ◽  
Chein-Hsiun Kuang ◽  
Tai-Chun Han ◽  
Chin-Chung Yu
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Annealing Effect ◽  
Zno Thin Films ◽  
Post Annealing ◽  
Doped Zno

Room-temperature ferromagnetism in n-type Cu-doped ZnO thin films

2007 ◽  
Vol 102 (3) ◽  
pp. 033905 ◽  
Author(s):  
D. L. Hou ◽  
X. J. Ye ◽  
X. Y. Zhao ◽  
H. J. Meng ◽  
H. J. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Thin Films ◽  
Doped Zno

The effects of porous silicon on the crystalline properties of ZnO thin films

2009 ◽  
Vol 70 (6) ◽  
pp. 967-971 ◽  
Author(s):  
Hong Cai ◽  
Honglie Shen ◽  
Yugang Yin ◽  
Linfeng Lu ◽  
Jiancang Shen ◽  
...  
Keyword(s):  
Thin Films ◽  
Porous Silicon ◽  
Zno Thin Films

Room-temperature synthesis and optical properties of nanostructured Ba-Doped ZnO thin films

2019 ◽  
Vol 130 ◽  
pp. 321-331 ◽  
Author(s):  
C.C. Okorieimoh ◽  
Ugochi Chime ◽  
Agnes C. Nkele ◽  
Assumpta C. Nwanya ◽  
Itani Given Madiba ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Temperature Synthesis ◽  
Room Temperature Synthesis ◽  
Doped Zno

scholarly journals Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
M. Acosta ◽  
I. Riech ◽  
E. Martín-Tovar
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Band Gap ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Rf Sputtering ◽  
Argon Pressure ◽  
Band Gaps ◽  
Zno Thin Films ◽  
Optical Band Gaps

Zinc oxide (ZnO) thin films were grown by nonreactive RF sputtering at room temperature under varying argon pressures (PAr). Their optical band gap was found to increase from 3.58 to 4.34 eV when the argon pressure increases from 2.67 to 10.66 Pa. After annealing at 200°C and 500°C, optical band gaps decrease considerably. The observed widening of the band gap with increasingPArcan be understood as being a consequence of the poorer crystallinity of films grown at higher pressures. Measurements of morphological and electrical properties of these films correlate well with this picture. Our main aim is to understand the effects ofPAron several physical properties of the films, and most importantly on its optical band gap.

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