Segmentation of digital microscopy data for the analysis of defect structures in materials using nonlinear diffusions

2008 ◽  
Author(s):  
Landis M. Huffman ◽  
Jeff Simmons ◽  
Ilya Pollak
Keyword(s):  
Digital Microscopy ◽  
Defect Structures ◽  
Nonlinear Diffusions ◽  
Microscopy Data

scholarly journals Влияние температуры деформации в камере Бриджмена на особенности формирования дефектной структуры технически чистого титана

2018 ◽  
Vol 44 (20) ◽  
pp. 70
Author(s):  
Н.А. Шурыгина ◽  
А.М. Глезер ◽  
Д.Л. Дьяконов ◽  
А.А. Томчук ◽  
А.Г. Кадомцев ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Hydrostatic Pressure ◽  
High Hydrostatic Pressure ◽  
Defect Structures ◽  
Cryogenic Temperatures ◽  
Two Phase ◽  
Α Phase ◽  
Electron Microscopy Data ◽  
Phase Mixture ◽  
Microscopy Data

AbstractTransmission electron microscopy data showed evidence of the formation of structural regions corresponding to deformation (dislocated) fragments and dynamically recrystallized grains in α-phase titanium upon torsion at high hydrostatic pressure at room and cryogenic temperatures. It is shown that the previously proposed “two-phase mixture” model is applicable to description of these defect structures.

scholarly journals Open source tools for management and archiving of digital microscopy data to allow integration with patient pathology and treatment information

2013 ◽  
Vol 8 (1) ◽  
Author(s):  
Matloob Khushi ◽  
Georgina Edwards ◽  
Diego Alonso de Marcos ◽  
Jane E Carpenter ◽  
J Dinny Graham ◽  
...  
Keyword(s):  
Open Source ◽  
Digital Microscopy ◽  
Treatment Information ◽  
Microscopy Data

A new type of defect structure in 124-superconducting oxide revealed by HREM

1991 ◽  
Vol 49 ◽  
pp. 1092-1093
Author(s):  
R. Sharma ◽  
B.L. Ramakrishna ◽  
N.N. Thadhani ◽  
D. Hianes ◽  
Z. Iqbal
Keyword(s):  
Shock Wave ◽  
Defect Structure ◽  
Neutron Radiation ◽  
Weak Links ◽  
Defect Structures ◽  
New Materials ◽  
New Type ◽  
Current Densities ◽  
Processing Techniques ◽  
Microstructural Studies

After materials with superconducting temperatures higher than liquid nitrogen have been prepared, more emphasis has been on increasing the current densities (Jc) of high Tc superconductors than finding new materials with higher transition temperatures. Different processing techniques i.e thin films, shock wave processing, neutron radiation etc. have been applied in order to increase Jc. Microstructural studies of compounds thus prepared have shown either a decrease in gram boundaries that act as weak-links or increase in defect structure that act as flux-pinning centers. We have studied shock wave synthesized Tl-Ba-Cu-O and shock wave processed Y-123 superconductors with somewhat different properties compared to those prepared by solid-state reaction. Here we report the defect structures observed in the shock-processed Y-124 superconductors.

Creating a standard method of controlling digital microscopes: the microscope access protocol (map)

1995 ◽  
Vol 53 ◽  
pp. 16-17
Author(s):  
T. A. Dodson ◽  
E. Völkl ◽  
L. F. Allard ◽  
T. A. Nolan
Keyword(s):  
Data Storage ◽  
Storage Systems ◽  
Digital Systems ◽  
Data Networks ◽  
Digital Microscopy ◽  
Command Language ◽  
Access Protocol ◽  
Analog To Digital ◽  
Basic Physics ◽  
Scanning Electron

The process of moving to a fully digital microscopy laboratory requires changes in instrumentation, computing hardware, computing software, data storage systems, and data networks, as well as in the operating procedures of each facility. Moving from analog to digital systems in the microscopy laboratory is similar to the instrumentation projects being undertaken in many scientific labs. A central problem of any of these projects is to create the best combination of hardware and software to effectively control the parameters of data collection and then to actually acquire data from the instrument. This problem is particularly acute for the microscopist who wishes to "digitize" the operation of a transmission or scanning electron microscope. Although the basic physics of each type of instrument and the type of data (images & spectra) generated by each are very similar, each manufacturer approaches automation differently. The communications interfaces vary as well as the command language used to control the instrument.

Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

1987 ◽  
Vol 45 ◽  
pp. 340-341
Author(s):  
H. L. Tsai ◽  
J. W. Lee
Keyword(s):  
Growth Process ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Lattice Misfit ◽  
Device Fabrication ◽  
Silicon Substrates ◽  
Defect Structures ◽  
Gaas Film ◽  
Substrate Quality ◽  
Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

Defect structures of Nb1+αS2 sulfidation scales

1992 ◽  
Vol 50 (1) ◽  
pp. 38-39
Author(s):  
Chuxin Zhou ◽  
L. W. Hobbs
Keyword(s):  
Stacking Faults ◽  
Rhombohedral Structure ◽  
Stacking Sequence ◽  
Defect Structures ◽  
X Ray Diffraction ◽  
X Ray ◽  
Plane Normal ◽  
Lower Case ◽  
Sulfur Layer ◽  
Two Phases

One of the major purposes in the present work is to study the high temperature sulfidation properties of Nb in severe sulfidizing environments. Kinetically, the sulfidation rate of Nb is satisfactorily slow, but the microstructures and non-stoichiometry of Nb1+αS2 challenge conventional oxidation/sulfidation theory and defect models of non-stoichiometric compounds. This challenge reflects our limited knowledge of the dependence of kinetics and atomic migration processes in solid state materials on their defect structures.Figure 1 shows a high resolution image of a platelet from the middle portion of the Nb1+αS2 scale. A thin lamellar heterogeneity (about 5nm) is observed. From X-ray diffraction results, we have shown that Nb1+αS2 scale is principally rhombohedral structure, but 2H-NbS2 can result locally due to stacking faults, because the only difference between these 2H and 3R phases is variation in the stacking sequence along the c axis. Following an ABC notation, we use capital letters A, B and C to represent the sulfur layer, and lower case letters a, b and c to refer to Nb layers. For example, the stacking sequence of 2H phase is AbACbCA, which is a ∼12Å period along the c axis; the stacking sequence of 3R phase is AbABcBCaCA to form an ∼18Å period along the c axis. Intergrowth of these two phases can take place at stacking faults or by a shear in the basal plane normal to the c axis.

Use of digital microscopy in process control during the manufacture of rubber-modified thermoplastics

1996 ◽  
Vol 54 ◽  
pp. 616-617
Author(s):  
M. T. Dineen
Keyword(s):  
Ccd Camera ◽  
Operating Costs ◽  
Hard Copy ◽  
Production Plant ◽  
Digital Microscopy ◽  
Nih Image ◽  
Transmission Electron ◽  
Conventional Film ◽  
Product Loss ◽  
Image Collection

The production of rubber modified thermoplastics can exceed rates of 30,000 pounds per hour. If a production plant needs to equilibrate or has an upset, that means operating costs and lost revenue. Results of transmission electron microscopy (TEM) can be used for process adjustments to minimize product loss. Conventional TEM, however, is not a rapid turnaround technique. The TEM process was examined, and it was determined that 50% of the time it took to complete a polymer sample was related to film processing, even when using automated equipment. By replacing the conventional film portion of the process with a commercially available system to digitally acquire the TEM image, a production plant can have the same TEM image in the control room within 1.5 hours of sampling.A Hitachi H-600 TEM Operated at 100 kV with a tungsten filament was retrofitted with a SEMICAPS™ image collection and processing workstation and a KODAK MEGAPLUS™ charged coupled device (CCD) camera (Fig. 1). Media Cybernetics Image-Pro Plus software was included, and connections to a Phaser II SDX printer and the network were made. Network printers and other PC and Mac software (e.g. NIH Image) were available. By using digital acquisition and processing, the time it takes to produce a hard copy of a digital image is greatly reduced compared to the time it takes to process film.

Flux-pinning-related defect structures in melt-processed YBa2Cu3O7-x

1993 ◽  
Vol 51 ◽  
pp. 936-937
Author(s):  
Z. L. Wang ◽  
R. Kontra ◽  
A. Goyal ◽  
D. M. Kroeger ◽  
L.F. Allard
Keyword(s):  
Volume Fraction ◽  
Local Density ◽  
Stacking Faults ◽  
Image Resolution ◽  
Defect Structures ◽  
Atomic Structures ◽  
Transmission Electron ◽  
Point Image ◽  
Related Defect ◽  
Point To Point

Previous studies of Y2BaCuO5/YBa2Cu3O7-δ(Y211/Y123) interfaces in melt-processed and quench-melt-growth processed YBa2Cu3O7-δ using high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS) have revealed a high local density of stacking faults in Y123, near the Y211/Y123 interfaces. Calculations made using simple energy considerations suggested that these stacking faults may act as effective flux-pinners and may explain the observations of increased Jc with increasing volume fraction of Y211. The present paper is intended to determine the atomic structures of the observed defects. HRTEM imaging was performed using a Philips CM30 (300 kV) TEM with a point-to-point image resolution of 2.3 Å. Nano-probe EDS analysis was performed using a Philips EM400 TEM/STEM (100 kV) equipped with a field emission gun (FEG), which generated an electron probe of less than 20 Å in diameter.Stacking faults produced by excess single Cu-O layers: Figure 1 shows a HRTEM image of a Y123 film viewed along [100] (or [010]).

Automated 3-D cell population analysis in thick tissue sections using laser-scanning confocal-microscopy data

1993 ◽  
Vol 51 ◽  
pp. 562-563
Author(s):  
Hakan Ancin
Keyword(s):  
Laser Scanning ◽  
Population Analysis ◽  
Three Dimensional ◽  
Large Data ◽  
Laser Scanning Confocal Microscopy ◽  
Tissue Slices ◽  
Scanning Confocal Microscopy ◽  
Tissue Sections ◽  
Spatially Adaptive ◽  
Microscopy Data

This paper presents methods for performing detailed quantitative automated three dimensional (3-D) analysis of cell populations in thick tissue sections while preserving the relative 3-D locations of cells. Specifically, the method disambiguates overlapping clusters of cells, and accurately measures the volume, 3-D location, and shape parameters for each cell. Finally, the entire population of cells is analyzed to detect patterns and groupings with respect to various combinations of cell properties. All of the above is accomplished with zero subjective bias.In this method, a laser-scanning confocal light microscope (LSCM) is used to collect optical sections through the entire thickness (100 - 500μm) of fluorescently-labelled tissue slices. The acquired stack of optical slices is first subjected to axial deblurring using the expectation maximization (EM) algorithm. The resulting isotropic 3-D image is segmented using a spatially-adaptive Poisson based image segmentation algorithm with region-dependent smoothing parameters. Extracting the voxels that were labelled as "foreground" into an active voxel data structure results in a large data reduction.

Sign in / Sign up

Export Citation Format

Share Document