Novel spin-on organic hardmask with high plasma etch resistance

2008 ◽  
Author(s):  
Chang-Il Oh ◽  
Jin-Kuk Lee ◽  
Min-Soo Kim ◽  
Kyong-Ho Yoon ◽  
Hwan-Sung Cheon ◽  
...  
Keyword(s):  
High Plasma ◽  
Plasma Etch

Development of nanocomposite resists with high plasma etch resistance

2007 ◽  
Author(s):  
Chunwei Chen ◽  
Hong Zhuang ◽  
Ping-Hung Lu ◽  
Mark Neisser ◽  
Georg Pawlowski
Keyword(s):  
High Plasma ◽  
Plasma Etch

Evaluation of RE-650 as a positive tone resist for electron beam lithography with high plasma etch durability

2020 ◽  
Vol 227 ◽  
pp. 111271
Author(s):  
Mingsai Zhu ◽  
Chongyu Mei ◽  
Jianan Deng ◽  
Yuying Xie ◽  
Yifang Chen
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
High Plasma ◽  
Plasma Etch

GaN Etching in BCl3/Cl2 Plasmas

1998 ◽  
Vol 512 ◽  
Author(s):  
R. J. Shul ◽  
C. I. H. Ashby ◽  
C. G. Willison ◽  
L. Zhang ◽  
J. Han ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Plasma Chemistry ◽  
High Plasma ◽  
High Density ◽  
Chamber Pressure ◽  
Plasma Etch ◽  
Source Power ◽  
Inductively Coupled ◽  
High Volatility ◽  
Gan Etching

ABSTRACTGaN etching can be affected by a wide variety of parameters including plasma chemistry and plasma density. Chlorine-based plasmas have been the most widely used plasma chemistries to etch GaN due to the high volatility of the GaClx and NClx etch products. The source of Cl and the addition of secondary gases can dramatically influence the etch characteristics primarily due to their effect on the concentration of reactive Cl generated in the plasma. In addition, high-density plasma etch systems have yielded high quality etching of GaN due to plasma densities which are 2 to 4 orders of magnitude higher than reactive ion etch (RIE) plasma systems. The high plasma densities enhance the bond breaking efficiency of the GaN, the formation of volatile etch products, and the sputter desorption of the etch products from the surface. In this study, we report GaN etch results for a high-density inductively coupled plasma (ICP) as a function of BCl3:Cl2 flow ratio, dc-bias, chamber pressure, and ICP source power. GaN etch rates ranging from ∼100 Å/min to > 8000 Å/min were obtained with smooth etch morphology and anisotropic profiles.

scholarly journals High-Density Plasma-Induced Etch Damage of GaN

1999 ◽  
Vol 573 ◽  
Author(s):  
R. J. Shul ◽  
L. Zhang ◽  
A. G. Baca ◽  
C. G. Willison ◽  
J. Han ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Critical Dimension ◽  
Group Iii Nitrides ◽  
High Plasma ◽  
High Density ◽  
Plasma Flux ◽  
Plasma Etch ◽  
Critical Dimensions ◽  
Profile Control ◽  
Density Plasma

ABSTRACTAnisotropic, smooth etching of the group-Ill nitrides has been reported at relatively high rates in high-density plasma etch systems. However, such etch results are often obtained under high dc-bias and/or high plasma flux conditions where plasma induced damage can be significant. Despite the fact that the group-III nitrides have higher bonding energies than more conventional III–V compounds, plasma-induced etch damage is still a concern. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or anisotropy which significantly limits critical dimensions and reduces the utility of the process for device applications requiring vertical etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in sheet resistance and contact resistance for n- and p-type GaN samples exposed to an Ar inductively coupled plasma (ICP). In general, plasma-induced damage was more sensitive to ion bombardment energies as compared to plasma flux. In addition, p-GaN was typically more sensitive to plasma-induced damage as compared to n-GaN.

Author response for "Daratumumab for Relapsed or Refractory AL Amyloidosis with high Plasma Cell Burden"

2019 ◽  
Author(s):  
Rahel Schwotzer ◽  
Markus Gabriel Manz ◽  
Stefanie Pederiva ◽  
Christine Waibel ◽  
Clemens Caspar ◽  
...  
Keyword(s):  
Plasma Cell ◽  
High Plasma ◽  
Author Response ◽  
Al Amyloidosis

Relation between Plasminogen Activator Inhibitor-1 and Hepatic Enzyme Concentrations in Hyperlipidemic Patients

1994 ◽  
Vol 72 (03) ◽  
pp. 434-437 ◽  
Author(s):  
E Bruckert ◽  
A Ankri ◽  
P Glral ◽  
G Turpin
Keyword(s):  
Blood Pressure ◽  
Plasminogen Activator ◽  
Plasminogen Activator Inhibitor ◽  
Tolerance Test ◽  
High Plasma ◽  
Oral Glucose ◽  
Plasminogen Activator Inhibitor 1 ◽  
Glutamyl Transferase ◽  
Activator Inhibitor ◽  
Pai 1

SummaryPlasminogen activator inhibitor type-1 (PAI-1) is a key determinant of the fibrinolytic capacity. Its activity correlates with most of the characteristic features of insulin resistance syndrome, i. e. obesity, high blood pressure and hyperlipidemia.We measured plasma PAI-1 antigen levels in 131 asymptomatic men (aged 44.2 ± 11 years) who had been referred for hyperlipidemia. Those taking medication and those with a secondary hyperlipidemia were excluded.We confirmed the correlation between PAI-1 levels and the following variables: body mass index, blood pressure, triglyceride concentration, and blood glucose and insulin levels before and after an oral glucose tolerance test. We also found a significant and independent correlation between PAI-1 and the concentration of the hepatic enzymes glutamyl transferase, alanine aminotransferase and aspartate aminotransferase.Mild liver abnormalities (presumably steatosis) may thus be one of the factors accounting for high plasma PAI-1 levels in hyperlipidemic patients.

Respective Roles of Antithrombin III and Alpha 2 Macroglobulin in Thrombin Inactivation

1981 ◽  
Vol 45 (01) ◽  
pp. 051-054 ◽  
Author(s):  
A M Fischer ◽  
J Tapon-Bretaudiere ◽  
A Bros ◽  
F Josso
Keyword(s):  
Antithrombin Iii ◽  
Practical Interest ◽  
High Plasma ◽  
At Iii ◽  
Human Material ◽  
Cofactor Activity

SummaryIn order to investigate the mechanism of thrombin inactivation in the presence of both antithrombin III (AT III) and α 2-macroglobulin (α 2 M), thrombin and the inhibitors have been purified from human material and thrombin inactivation studied using purified reagents either alone or added to defibrinated plasma. Comparison of clotting and amidolytic activities of residual thrombin allowed to measure the amount of thrombin bound to α 2 M. In a purified reagent system as well as in plasma, part of exogenous thrombin is bound to α 2 M. The amount of bound thrombin is related to α 2 M concentration. Conversely, previous plasma α 2 M depletion by immunoabsorption increases the consumption of heparin-cofactor activity by exogenous thrombin. Thus AT III and α 2 M compete for thrombin inactivation. This finding could be of practical interest in clinical situations associating high plasma α 2 M levels and a decrease of AT III concentration.

Intoxication with Phenprocoumon (Marcoumar) Pharmacokinetics and Side Effects

1969 ◽  
Vol 21 (02) ◽  
pp. 320-324 ◽  
Author(s):  
K Seiler ◽  
F Duckert
Keyword(s):  
Plasma Concentration ◽  
Side Effects ◽  
Half Life ◽  
Plasma Proteins ◽  
Repeated Administration ◽  
High Plasma ◽  
Vitamin K1 ◽  
Clotting Factors ◽  
Therapeutic Concentration ◽  
High Plasma Concentration

SummaryA case of severe Marcoumar intoxication is described. Eleven hours after the intake a plasma concentration of 15.75 µg/ml was found which corresponds approximately to the 5-fold therapeutic concentration. Repeated administration of vitamin K1 made it possible to avoid extreme lowering of the activity of the clotting factors II, VII and X and to prevent bleeding. Side effects were not observed. The biologic half-life of Phenprocoumon has been found to be shortened at high plasma concentration (3.7 instead of 5.9 days). It is probable that in extreme concentration the drug is less strongly bound to the plasma proteins.

Low serum thyrotropin is associated with high plasma fibrinogen levels. The Study of Health in Pomerania

2005 ◽  
Vol 113 (S 1) ◽  
Author(s):  
M Dörr ◽  
U John ◽  
H Wallaschofski ◽  
SB Felix ◽  
H Völzke
Keyword(s):  
High Plasma ◽  
Plasma Fibrinogen ◽  
Low Serum

DIE ZUSAMMENSETZUNG DER JODHALTIGEN VERBINDUNGEN UND IHRE BEZIEHUNG ZUM JODUMSATZ IN EUTHYREOTEN STRUMEN

1962 ◽  
Vol 41 (4) ◽  
pp. 584-594 ◽  
Author(s):  
Dankwart Reinwein ◽  
Erich Klein
Keyword(s):  
Column Chromatography ◽  
Iodine Content ◽  
High Plasma ◽  
Secretion Rate ◽  
Total Iodine ◽  
Iodine Compound ◽  
Hormonal Secretion ◽  
Carrier Free ◽  
Iodine Metabolism ◽  
Diffuse Goiter

ABSTRACT The iodine metabolism was investigated in 29 patients with euthyroid non-endemic diffuse goiter. 1 to 14 days before thyroidectomy the patients received carrier-free 131I. The chemical iodine fractions (PBI, BEI and iodide) of the thyroid and the labelled iodine compound were analyzed by means of paper- and column chromatography. In one gland the total iodine content varied only by ± 19.6% of the average, the relative shares of PBI, BEI and iodide as well as that of the iodoamino acids being equal. Monoiodotyrosine, diiodotyrosine and thyroxine were found in the thyroid homogenate without hydrolysis. The homogenate after hydrolysis contained more iodotyrosines at the expense of iodothyronines than do normal glands. 17 goiters with normal 131I-uptake showed a high total iodine content (14.2 ± 5.0 mg) whilst 9 goiters with an increased 131I-uptake had low values (3.58 ± 0.6 mg). The opposite was found for the relative shares of BEI with the chromatographically isolated iodothyronines thyroxine, triiodothyronine and an unidentified iodine compound. Goiters with »high plasma PB131I« were characterized by a faster transfer of 131I into the more heavily iodinated compounds than is found in glands with a normal hormonal secretion rate. The highest values for the iodothyronines were found in goiters with increased 131I-uptake together with a high hormonal secretion rate. From this study it appears that the changes in the iodine-poor glands are due to a defective exo- or endogenous iodine supply. The observed alterations in iodine-rich glands are probably induced by a faulty iodine utilization characterized by an incomplete iodotyrosyl-coupling defect.

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