Ion implantation of B ions into CdHgTe/CdZnTe substrate and determination of optimum optical characteristics for making diode p-n structures in narrow(-band)-gap semiconductor material CdHgTe/CdZnTe

2008 ◽  
Author(s):  
Ruslana S. Udovitska ◽  
Genadiy V. Kalisty ◽  
Vladimir V. Fedulov
Keyword(s):  
Ion Implantation ◽  
Band Gap ◽  
Narrow Band ◽  
Semiconductor Material ◽  
Optical Characteristics ◽  
Cdznte Substrate

scholarly journals Time-resolved ARPES Determination of a Quasi-Particle Band Gap and Hot Electron Dynamics in Monolayer MoS2

Nano Letters ◽  
2021 ◽  
Vol 21 (17) ◽  
pp. 7363-7370
Author(s):  
Woojoo Lee ◽  
Yi Lin ◽  
Li-Syuan Lu ◽  
Wei-Chen Chueh ◽  
Mengke Liu ◽  
...  
Keyword(s):  
Band Gap ◽  
Hot Electron ◽  
Electron Dynamics ◽  
Monolayer Mos2 ◽  
Quasi Particle ◽  
Time Resolved

scholarly journals Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders

2021 ◽  
Vol 5 (4) ◽  
Author(s):  
Regina Ariskina ◽  
Michael Schnedler ◽  
Pablo D. Esquinazi ◽  
Ana Champi ◽  
Markus Stiller ◽  
...  
Keyword(s):  
Band Gap ◽  
Narrow Band ◽  
Surface Band ◽  
Band Bending ◽  
Atomic Force

Penta-BeP2 monolayer: A new 2D beryllium phosphate with a narrow band gap

2019 ◽  
Vol 728 ◽  
pp. 136-141 ◽  
Author(s):  
Zohre Azarmi ◽  
Mosayeb Naseri ◽  
Sajjad Parsamehr
Keyword(s):  
Band Gap ◽  
Narrow Band
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