Broadband photoresponse from InAs quantum dots embedded in a graded well for visible to mid-infrared detection

2008 ◽  
Author(s):  
Brandon S. Passmore ◽  
Jiang Wu ◽  
Eric A. DeCuir, Jr. ◽  
Omar Manasreh ◽  
P. M. Lytvyn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Detection ◽  
Mid Infrared ◽  
Inas Quantum Dots

scholarly journals Temperature Dependence of Quantum Dots-In-Well Infrared Photo Detectors (QDIPs) using Photoluminescence

2019 ◽  
Vol 8 (2S2) ◽  
pp. 254-259
Keyword(s):  
Quantum Dots ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Dark Current ◽  
Infrared Detectors ◽  
Normal Incidence ◽  
Infrared Detection ◽  
Intersubband Transitions ◽  
Inas Quantum Dots ◽  
Photo Detectors

A research of quantity dots-in-well infrared photo detectors (QDIPs) produces helpful outcomes for creating a twocolor QDIP. Quantum dot infrared photo detectors (QDIPs) have been shown to be a main technology in mid-and longwavelength infrared detection owing to their capacity for normal incidence operation and low dark current. This research explores infrared detectors based on intersubband transitions in a novel heterostructure of InAs / In0.15 Ga0.85 As / GaAs quantum dotsin-well (DWELL). The InAs quantum dots are also positioned in an In0.15 Ga0.85 in the DWELL framework, which in turn is well positioned with the In0.1Ga0.9As obstacle in GaAs quantum. Using fourier transform infrared spectroscopy, the optical characteristics of the sample were researched using photoluminescence and photocurrent. Spectrally adjustable reaction was noted at 6.2μm and 7.5μm with prejudice and lengthy wave IR reaction

Mid-infrared Electroluminescence from Surface Plasmon Coupled InAs Quantum Dots

2009 ◽  
Vol 1208 ◽  
Author(s):  
Brandon Passmore ◽  
David Adams ◽  
Troy Ribaudo ◽  
Dan Wasserman ◽  
Stephen Lyon ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Transmission ◽  
Signal To Noise Ratio ◽  
Near Field ◽  
Emission Spectra ◽  
Mid Infrared ◽  
Inas Quantum Dots ◽  
Reference Device ◽  
Electrically Pumped ◽  
Top Contact

AbstractThe mid-infrared spontaneous emission from intersubband energy transitions in self-assembled InAs quantum dots is demonstrated with plasmonic top contact output couplers. Electrically pumped devices having subwavelength meshes designed to exhibit extraordinary optical transmission from 9 – 12 μm are measured and compared to a reference device with an open area contact. From additional patterning on the top contact, the signal-to-noise ratio was 4 times greater than the reference device. Beyond simply filtering the emission spectra of the quantum dot material, an emission null is observed which we link to the dots being in the near field region of the plasmonic coupler.

Self-Assembled InSb/InAs Quantum Dots for the Mid-Infrared Spectral Range 3–4 μm

2008 ◽  
pp. 125-127
Author(s):  
K. D. Moiseev ◽  
Ya. A. Parkhomenko ◽  
M. P. Mikhailova ◽  
S. S. Kizhaev ◽  
E. V. Ivanov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Spectral Range ◽  
Mid Infrared ◽  
Inas Quantum Dots ◽  
Infrared Spectral Range ◽  
Infrared Spectral ◽  
Self Assembled

Mid-infrared emitters utilizing intersublevel transitions in self assembled InAs quantum dots

2010 ◽  
Author(s):  
T. Ribaudo ◽  
B. S. Passmore ◽  
D. C. Adams ◽  
X. Qian ◽  
S. Vangala ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Mid Infrared ◽  
Inas Quantum Dots ◽  
Infrared Emitters ◽  
Self Assembled

Multiple wavelength anisotropically polarized mid-infrared emission from InAs quantum dots

2006 ◽  
Vol 88 (19) ◽  
pp. 191118 ◽  
Author(s):  
D. Wasserman ◽  
C. Gmachl ◽  
S. A. Lyon ◽  
E. A. Shaner
Keyword(s):  
Quantum Dots ◽  
Infrared Emission ◽  
Mid Infrared ◽  
Inas Quantum Dots ◽  
Multiple Wavelength
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