Integrated 1060nm MOPA pump source for high-power green light emitters in display technology

2008 ◽  
Author(s):  
O. Brox ◽  
J. Wiedmann ◽  
F. Scholz ◽  
F. Bugge ◽  
J. Fricke ◽  
...  
Keyword(s):  
High Power ◽  
Green Light ◽  
Light Emitters ◽  
Pump Source ◽  
Display Technology

scholarly journals Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters

Nano Letters ◽  
2016 ◽  
Vol 16 (2) ◽  
pp. 1056-1063 ◽  
Author(s):  
Chao Zhao ◽  
Tien Khee Ng ◽  
Nini Wei ◽  
Aditya Prabaswara ◽  
Mohd S. Alias ◽  
...  
Keyword(s):  
High Power ◽  
Light Emitters ◽  
High Quality ◽  
Bulk Metal ◽  
Metal Substrates ◽  
Quantum Disks

II–VI blue-green light emitters

1996 ◽  
Vol 159 (1-4) ◽  
pp. 555-565 ◽  
Author(s):  
A. Ishibashi
Keyword(s):  
Green Light ◽  
Light Emitters

Study the Effect of Junction Temperature on the Peak Wavelength in GaN-Based High-Power Green Light Emitting Diodes

2011 ◽  
Vol 399-401 ◽  
pp. 1034-1038
Author(s):  
Rong Rong Zhuang ◽  
Ping Cai ◽  
Jiang Li Huang
Keyword(s):  
High Power ◽  
Temperature Rise ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Red Shift ◽  
Junction Temperature ◽  
Spectral Peak ◽  
Peak Wavelength ◽  
Drive Current ◽  
Light Emitting

The junction temperature of GaN-based high-power green light emitting diodes is measured using the temperature coefficients of the diode forward voltage, from changes in temperature and changes in drive current to measure the LED junction temperature and the corresponding spectral, Respectively. Experiments show that, junction temperature due to environmental temperature increased, and the red shift of the spectral peak wavelength. When low temperature or less then the rated current range, the drive current increased in junction temperature rise due to the spectral peak wavelength blue shift . When the current is increased in the range of close to or greater than the rated current, leading to the junction temperature rise will cause spectral red shift . The peak wavelengths’ shift degree of 0.0579nm / k, 0.0751 nm / k and-0.1974nm / k, -0.0915 nm / k are calculated in both cases. The phenomenon is due to the LED junction temperature increases lead to band gap shrinkage, and the result of the role of spontaneous polarization and piezoelectric polarization in Ⅲ-nitride semiconductor materials.

InGaN-based nanocolumns for green light emitters

2010 ◽  
Author(s):  
K. Kishino ◽  
K. Yamano ◽  
S. Ishizawa ◽  
K. Nagashima ◽  
R. Araki ◽  
...  
Keyword(s):  
Green Light ◽  
Light Emitters

High-power ohmic-electrodes dispersive AlGaInP double-hetero structure yellowish-green light-emitting diodes

2000 ◽  
Vol 221 (1-4) ◽  
pp. 652-656 ◽  
Author(s):  
Y Hosokawa ◽  
W Nabekura ◽  
T Hoshina ◽  
R Takeuchi ◽  
K Sakaue ◽  
...  
Keyword(s):  
High Power ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Hetero Structure ◽  
Light Emitting ◽  
Yellowish Green

High-power high-Modulation-speed 1060-nm DBR lasers for Green-light emission

2006 ◽  
Vol 18 (4) ◽  
pp. 616-618 ◽  
Author(s):  
M.H. Hu ◽  
Hong Ky Nguyen ◽  
Kechang Song ◽  
Yabo Li ◽  
N.J. Visovsky ◽  
...  
Keyword(s):  
High Power ◽  
Light Emission ◽  
Green Light ◽  
High Modulation ◽  
Green Light Emission ◽  
Dbr Lasers ◽  
Modulation Speed
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