Development and characterization of a new low stress molybdenum silicide film for 45 nm attenuated phase shift mask manufacturing

2007 ◽  
Author(s):  
Thomas Faure ◽  
Emily E. Gallagher ◽  
Louis Kindt ◽  
Steven Nash ◽  
Ken Racette ◽  
...  
Keyword(s):  
Phase Shift ◽  
Molybdenum Silicide ◽  
Silicide Film ◽  
Phase Shift Mask

Edge effects characterization of phase shift mask

2005 ◽  
Vol 23 (2) ◽  
pp. 417 ◽  
Author(s):  
Gek Soon Chua ◽  
Cho Jui Tay ◽  
Chenggen Quan ◽  
Qunying Lin
Keyword(s):  
Phase Shift ◽  
Edge Effects ◽  
Phase Shift Mask

Innovations in lithography metrology for characterization of phase-shift mask materials

2001 ◽  
Author(s):  
Dale A. Harrison ◽  
John C. Lam ◽  
A. Rahim Forouhi
Keyword(s):  
Phase Shift ◽  
Phase Shift Mask

EUV attenuated phase shift mask: development and characterization of mask properties

2021 ◽  
Author(s):  
Ikuya Fukasawa ◽  
Yohei Ikebe ◽  
Takeshi Aizawa ◽  
Tsutomu Shoki ◽  
Takahiro Onoue
Keyword(s):  
Phase Shift ◽  
Phase Shift Mask

scholarly journals Characterization of electrostatic discharge threshold voltage of phase-shift mask reticle

2022 ◽  
Vol 12 (2) ◽  
pp. 1265
Author(s):  
Harriman Razman ◽  
Azmi Awang Md Isa ◽  
Mohamad Kadim Suaidi ◽  
Mohd Azizi Chik
Keyword(s):  
Phase Shift ◽  
Threshold Voltage ◽  
Integrated Circuit ◽  
Electrostatic Discharge ◽  
Quartz Substrate ◽  
Surface Current ◽  
Critical Dimension ◽  
Electrostatic Charge ◽  
Phase Shift Mask

A reticle is a stencil used in lithography process for forming integrated circuit (IC) on silicon substrate. It consists of a thin (100 nm) coating of masking metallic patterned (features) with critical dimension (CD) of nanometers on a thicker quartz substrate. The features can be damaged by electrostatic discharge (ESD) when exposed to the environment electrostatic charge and caused deformed IC and eventually device difunctional. Semiconductor equipment materials industry (SEMI) standard established the allowable electrostatic charge on reticle based on the characterization of ESD threshold voltage on binary reticle. However, there is another type of reticle which is phase-shift mask (PSM), has not been characterized for its ESD threshold voltage. A direct current (DC) voltage is applied directly to the structures with CD of 80 nm, 110 nm, and 160 nm. The surface current is recorded at all levels of stress from 1 to 100 V. The current–voltage (IV) curve and physical inspection results for each cell are then reviewed and classified. The results yielded which no electric field induced migration (EFM) defect and breakdown voltage occurred at any of the structures. The cathode’s metal work function has been identified as the factor that influences the PSM reticle ESD threshold voltage.

Development and characterization of advanced phase-shift mask blanks for 14nm node and beyond

2014 ◽  
Author(s):  
Chang-Jun Kim ◽  
Kyu-Jin Jang ◽  
Min-Ki Choi ◽  
Chul-Kyu Yang ◽  
Jae-Chul Lee ◽  
...  
Keyword(s):  
Phase Shift ◽  
Advanced Phase ◽  
Phase Shift Mask

Characterization of binary and attenuated phase shift mask blanks for 32nm mask fabrication

2008 ◽  
Author(s):  
Thomas Faure ◽  
Emily Gallagher ◽  
Michael Hibbs ◽  
Louis Kindt ◽  
Ken Racette ◽  
...  
Keyword(s):  
Phase Shift ◽  
Phase Shift Mask ◽  
Mask Fabrication

Characterization of 45 nm Attenuated Phase Shift Mask Lithography with a Hyper Numerical Aperture ArF Tool

2006 ◽  
Vol 45 (6B) ◽  
pp. 5391-5395 ◽  
Author(s):  
Takashi Sato ◽  
Ayako Endo ◽  
Akiko Mimotogi ◽  
Shoji Mimotogi ◽  
Kazuya Sato ◽  
...  
Keyword(s):  
Phase Shift ◽  
Numerical Aperture ◽  
Phase Shift Mask
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