Production of ZnSxSe1-x zinc sulfoselenides by CVD method

2007 ◽  
Author(s):  
E. M. Gavrishchuk ◽  
D. V. Savin ◽  
V. B. Ikonnikov ◽  
T. I. Storogeva
Keyword(s):  
Cvd Method ◽  
Title Production

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

Amorphous-to-nanocrystalline transition in silicon thin films by hydrogen diluted silane using PE-CVD method

2020 ◽  
Vol 13 ◽  
Author(s):  
Ashok Jadhavar ◽  
Vidya Doiphode ◽  
Ajinkya Bhorde ◽  
Yogesh Hase ◽  
Pratibha Shinde ◽  
...  
Keyword(s):  
Flow Rate ◽  
Volume Fraction ◽  
Defect Density ◽  
Hydrogen Flow Rate ◽  
Spectroscopy Analysis ◽  
Deposition Parameter ◽  
Hydrogen Flow ◽  
Cvd Method ◽  
Silicon Thin Films ◽  
Increasing Trend

: Herein, we report effect of variation of hydrogen flow rate on properties of Si:H films synthesized using PE-CVD method. Raman spectroscopy analysis show increase in crystalline volume fraction and crystallite size implying that hydrogen flow in PECVD promote the growth of crystallinity in nc-Si:H films with an expense of reduction in deposition rate. FTIR spectroscopy analysis indicates that hydrogen content in the film increases with increase in hydrogen flow rate and hydrogen is predominantly incorporated in Si-H2 and (Si-H2)n bonding configuration. The optical band gap determined using E04 method and Tauc method (ETauc) show increasing trend with increase in hydrogen flow rate and E04 is found higher than ETauc over the entire range of hydrogen flow rate studied. We also found that the defect density and Urbach energy also increases with increase in hydrogen flow rate. Photosensitivity (Photo /Dark) decreases from  103 to  1 when hydrogen flow rate increased from 30 sccm to 100 sccm and can attributed to amorphous-to-nanocrystallization transition in Si:H films. The results obtained from the present study demonstrated that hydrogen flow rate is an important deposition parameter in PE-CVD to synthesize nc-Si:H films.

scholarly journals Controlled Fabrication of Quality ZnO NWs/CNTs and ZnO NWs/Gr Heterostructures via Direct Two-Step CVD Method

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1836
Author(s):  
Nicholas Schaper ◽  
Dheyaa Alameri ◽  
Yoosuk Kim ◽  
Brian Thomas ◽  
Keith McCormack ◽  
...  
Keyword(s):  
Direct Synthesis ◽  
Chemical Vapor ◽  
Single Walled Carbon Nanotubes ◽  
Materials Synthesis ◽  
Oxide Nanowires ◽  
Cvd Method ◽  
Thermal Actuators ◽  
Potential Applications ◽  
Walled Carbon Nanotubes ◽  
Scalable Production

A novel and advanced approach of growing zinc oxide nanowires (ZnO NWs) directly on single-walled carbon nanotubes (SWCNTs) and graphene (Gr) surfaces has been demonstrated through the successful formation of 1D–1D and 1D–2D heterostructure interfaces. The direct two-step chemical vapor deposition (CVD) method was utilized to ensure high-quality materials’ synthesis and scalable production of different architectures. Iron-based universal compound molecular ink was used as a catalyst in both processes (a) to form a monolayer of horizontally defined networks of SWCNTs interfaced with vertically oriented ZnO NWs and (b) to grow densely packed ZnO NWs directly on a graphene surface. We show here that our universal compound molecular ink is efficient and selective in the direct synthesis of ZnO NWs/CNTs and ZnO NWs/Gr heterostructures. Heterostructures were also selectively patterned through different fabrication techniques and grown in predefined locations, demonstrating an ability to control materials’ placement and morphology. Several characterization tools were employed to interrogate the prepared heterostructures. ZnO NWs were shown to grow uniformly over the network of SWCNTs, and much denser packed vertically oriented ZnO NWs were produced on graphene thin films. Such heterostructures can be used widely in many potential applications, such as photocatalysts, supercapacitors, solar cells, piezoelectric or thermal actuators, as well as chemical or biological sensors.

scholarly journals Nanofabrication using home-made RF plasma coupled chemical vapour deposition system

2014 ◽  
Vol 32 ◽  
pp. 1460342
Author(s):  
Si Ci Ong ◽  
Usman Ilyas ◽  
Rajdeep Singh Rawat
Keyword(s):  
Chemical Vapour ◽  
Chemical Vapor ◽  
Wide Band ◽  
Zno Nanowires ◽  
Operating Conditions ◽  
Rf Plasma ◽  
Zno Nanostructures ◽  
Energetic Ions ◽  
Cvd Method ◽  
Etching Effect

Zinc oxide, ZnO , a popular semiconductor material with a wide band gap (3.37 eV) and high binding energy of the exciton (60 meV), has numerous applications such as in optoelectronics, chemical/biological sensors, and drug delivery. This project aims to (i) optimize the operating conditions for growth of ZnO nanostructures using the chemical vapor deposition (CVD) method, and (ii) investigate the effects of coupling radiofrequency (RF) plasma to the CVD method on the quality of ZnO nanostructures. First, ZnO nanowires were synthesized using a home-made reaction setup on gold-coated and non-coated Si (100) substrates at 950 °C. XRD, SEM, EDX, and PL measurements were used for characterizations and it was found that a deposition duration of 10 minutes produced the most well-defined ZnO nanowires. SEM analysis revealed that the nanowires had diameters ranging from 30-100 mm and lengths ranging from 1-4 µm. In addition, PL analysis showed strong UV emission at 380 nm, making it suitable for UV lasing. Next, RF plasma was introduced for 30 minutes. Both remote and in situ RF plasma produced less satisfactory ZnO nanostructures with poorer crystalline structure, surface morphology, and optical properties due to etching effect of energetic ions produced from plasma. However, a reduction in plasma discharge duration to 10 minutes produced thicker and shorter ZnO nanostructures. Based on experimentation conducted, it is insufficient to conclude that RF plasma cannot aid in producing well-defined ZnO nanostructures. It can be deduced that the etching effect of energetic ions outweighed the increased oxygen radical production in RF plasma nanofabrication.

Preparation of ZnO thin films by MO-CVD method using bis(acetylacetonato) zinc(II) anhydrate fiber

2010 ◽  
Vol 7 (6) ◽  
pp. 1565-1567 ◽  
Author(s):  
Shigeyuki Seki ◽  
Hisashi Onodera ◽  
Takumi Sekizawa ◽  
Mio Sakuma ◽  
Koichi Haga ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Cvd Method

Synthesis of diamond on substrate with mechanical treatment by RF plasma CVD method

1993 ◽  
Vol 2 (1) ◽  
pp. 18-22 ◽  
Author(s):  
Y Shimada ◽  
K Kobayashi ◽  
N Mutsukura ◽  
Y Machi
Keyword(s):  
Mechanical Treatment ◽  
Rf Plasma ◽  
Plasma Cvd ◽  
Cvd Method

Study of a-Si:H/μc-Si:H Heterojunction as Photosensor for Large Screen Projection Display

1992 ◽  
Vol 258 ◽  
Author(s):  
Weiqiang Han ◽  
Gaorong Han ◽  
Jianmin Qiao ◽  
Pija Du ◽  
Danmei Zhao ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Glow Discharge ◽  
Device Performance ◽  
Blocking Layer ◽  
Large Screen ◽  
Cvd Method ◽  
Projection Display ◽  
Large Screen Projection ◽  
Deposition Conditions ◽  
Structure Properties

ABSTRACTLiquid crystal light valve(LCLV) using an a-Si:H/μc-Si:H heterostructure as the photosensor and the nematic liquid crystal as the modulator has been firstly presented for large screen projection display. The a-Si:H photoconductor and μc-Si:H light blocking layer were prepared by a modified glow discharge CVD method. The optoelectric and structure properties of the μc-Si:H films deposited at different deposition conditions have been studied. The a-Si:H film and the continuously deposited pc-Si:H film possibly form an a-Si:H/μc-Si:H heterojunction. The electrical and optoelectric properties of the heterojunction has been studied.LCLV using a-Si:H/μc-Si:H heterostructure has shown that the most aspects of the device performance can be improved.

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