Vertical Bridgman growth of Cd 1-x Zn x Te for room temperature radiation detectors

2007 ◽  
Author(s):  
Kelly A. Jones ◽  
Guido Ciampi ◽  
Christie E. Skrip ◽  
K. G. Lynn
Keyword(s):  
Room Temperature ◽  
Radiation Detectors ◽  
Bridgman Growth ◽  
Vertical Bridgman ◽  
Temperature Radiation

scholarly journals Study on In-Doped CdMgTe Crystals Grown by a Modified Vertical Bridgman Method Using the ACRT Technique

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4236 ◽  
Author(s):  
Pengfei Yu ◽  
Biru Jiang ◽  
Yongren Chen ◽  
Jiahong Zheng ◽  
Lijun Luan
Keyword(s):  
Room Temperature ◽  
Gamma Ray ◽  
Radiation Detectors ◽  
Bridgman Method ◽  
Second Phase ◽  
Zinc Blende ◽  
Te Inclusions ◽  
Vertical Bridgman ◽  
Temperature Radiation ◽  
Zinc Blende Structure

Cadmium–magnesium–telluride (CdMgTe) crystal was regarded as a potential semiconductor material. In this paper, an indium-doped Cd0.95Mg0.05Te ingot with 30 mm diameter and 120 mm length grown by a modified Bridgman method with excess Te condition was developed for room temperature gamma-ray detection. Characterizations revealed that the as-grown Cd0.95Mg0.05Te crystals had a cubic zinc-blende structure and additionally Te-rich second phase existed in the crystals. From the tip to tail of the ingot, the density of Te inclusions was about 103–105 cm−2. The crystals had a suitable band-gap range from 1.52–1.54 eV. Both infrared (IR) transmittance and resistivity were relatively low. Photoluminescence measurement indicated that the ingot had more defects. Fortunately, after annealing, IR transmittance and the resistivity were significantly enhanced due to the elimination of Te inclusions. CdMgTe crystal after annealing showed a good crystal quality. The energy resolutions of the detector for 241Am and 137Cs gamma-ray were 12.7% and 8.6%, respectively. The mobility-lifetime product for electron was 1.66 × 10−3 cm2/V. Thus, this material could be used for room temperature radiation detectors.

High quality planar Cd1-xMnxTe room-temperature radiation detectors

2021 ◽  
Vol 119 (6) ◽  
pp. 062103
Author(s):  
A. Brovko ◽  
P. Rusian ◽  
L. Chernyak ◽  
A. Ruzin
Keyword(s):  
Room Temperature ◽  
Radiation Detectors ◽  
High Quality ◽  
Temperature Radiation

scholarly journals Pulse-shape analysis in Cd0.9Zn0.1Te0.98Se0.02 room-temperature radiation detectors

2020 ◽  
Vol 116 (16) ◽  
pp. 162107 ◽  
Author(s):  
Sandeep K. Chaudhuri ◽  
Mohsin Sajjad ◽  
Krishna C. Mandal
Keyword(s):  
Shape Analysis ◽  
Pulse Shape ◽  
Room Temperature ◽  
Radiation Detectors ◽  
Pulse Shape Analysis ◽  
Temperature Radiation

Process Monitoring for Fabrication of Mercuric Iodide Room Temperature Radiation Detectors

1993 ◽  
Vol 324 ◽  
Author(s):  
J. M. Van Scyoc ◽  
T. E. Schlesinger ◽  
H. Yao ◽  
R. B. James ◽  
M. Natarajan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Radiation Detectors ◽  
Electrical Contacts ◽  
Careful Study ◽  
Mercuric Iodide ◽  
Optical Functions ◽  
Processing Step ◽  
Material Choice ◽  
Temperature Radiation ◽  
Processing Steps

AbstractIn the fabrication of mercuric iodide room temperature radiation detectors, as in any semiconductor process, the quality of the final device can be very sensitive to the details of the processing steps. Each processing step can either reduce the intrinsic defects and those extrinsic defects introduced by earlier steps, or it can introduce new defects. In mercuric iodide these defects can act as trapping and recombination centers, thereby degrading immediate device performance or leading to long-term reliability problems. With careful study and monitoring of each step, the process can be modified to improve the end product. In this work we used several techniques to study processing steps and their effects. Photoluminescence spectroscopy and photoionization revealed defects introduced during processing. One critical step is the formation of electrical contacts, as both the material choice and deposition method have an impact. Four point probe sheet resistance methods were used to characterize the loss of material from the contact as it reacted with or moved into the bulk semiconductor. Ellipsometry was used to characterize the intrinsic optical functions of the material, and to study the effects of surface aging on these functions. Results from this work provide suggestions for the modification and monitoring of the detector fabrication process.

scholarly journals Post-growth Annealing of Cadmium Zinc Telluride Crystals for Room-Temperature Radiation Detectors

2012 ◽  
Vol 41 (10) ◽  
pp. 2912-2916 ◽  
Author(s):  
G. Yang ◽  
A.E. Bolotnikov ◽  
P.M. Fochuk ◽  
Y. Cui ◽  
G. S. Camarda ◽  
...  
Keyword(s):  
Room Temperature ◽  
Cadmium Zinc Telluride ◽  
Zinc Telluride ◽  
Radiation Detectors ◽  
Temperature Radiation ◽  
Cadmium Zinc

Synthesis of TlBr powder for preparation of room temperature radiation detectors by co-precipitation method

2010 ◽  
Vol 175 (1) ◽  
pp. 65-69
Author(s):  
Lin Quan ◽  
Shuping Gong ◽  
Jianqiao Liu ◽  
Fang Meng ◽  
Dongxiang Zhou ◽  
...  
Keyword(s):  
Room Temperature ◽  
Radiation Detectors ◽  
Precipitation Method ◽  
Temperature Radiation ◽  
Co Precipitation
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