A study of silver-film ion-exchanged glass waveguides in phosphate glass

Author(s):  
Sanna Yliniemi ◽  
Jacques Albert ◽  
Seppo Honkanen
2020 ◽  
pp. 2150099
Author(s):  
He Pan ◽  
Shuo-Qi Lin ◽  
Li-Jie Shen ◽  
Rui-Lin Zheng ◽  
Li-Li Fu ◽  
...  

The 400 keV proton implantation with a fluence of [Formula: see text] ions/cm2 was applied on the [Formula: see text] co-doped phosphate glass to fabricate a planar waveguide structure. The mode profile at the end face of the waveguide was measured by the end-face coupling technique. The energy loss profile of the energetic protons was calculated by the SRIM 2013. The refractive index distribution was simulated by the reflectivity calculation method. Based on these results, the formation theory of the planar waveguides was discussed through simulating the energy loss distribution and analyzing the reconstructed refractive index profile, which could be used for applications in the future integrated optical systems.


2011 ◽  
Vol 295-297 ◽  
pp. 1240-1243
Author(s):  
Miao Tian ◽  
Xin Zhao ◽  
Zheng Yang Zhou ◽  
Hai Lin

To achieve high-gain C-band waveguide amplifiers with integrated configuration, bent channel structures (S-, U-, and F-bend) based on buried Er3+/Yb3+ codoped phosphate glass waveguide channel fabricated by field-assisted annealing (FAA) have been designed in a 4´4 cm2 substrate. Using simulated-bend method, the optimal radius for the curved structure is derived to be 1.00 cm with loss coefficient of 0.0045 dB/cm. In the wavelength range of 1520-1575 nm, obvious gain enhancement for the bent structure waveguides is anticipated, and for the F-bend waveguide, the net gain at 1534 nm wavelength is derived to be 43.95 dB, which is much higher than the value of 26.67 and 13.20 dB in the U- and S-bend waveguides, respectively, and over three times higher than that of the straight one. The simulation results indicate that the bent structure designing is beneficial in obtaining high signal gain in buried Er3+/Yb3+ codoped phosphate glass waveguides, which lays the foundation for the further design and fabrication of integrated devices.


2006 ◽  
Author(s):  
Juan Antonio Vallés ◽  
Miguel Angel Rebolledo ◽  
Javier Used

1991 ◽  
Vol 27 (23) ◽  
pp. 2167 ◽  
Author(s):  
S. Honkanen ◽  
S.I. Najafi ◽  
P. Poyhonen ◽  
G. Orcel ◽  
W.J. Wang ◽  
...  
Keyword(s):  

Author(s):  
N. G. Boetti ◽  
D. Pugliese ◽  
E. Ceci-Ginistrelli ◽  
J. Lousteau ◽  
F. Poletti ◽  
...  

2006 ◽  
Author(s):  
Sanna Yliniemi ◽  
Jacques Albert ◽  
Albane Laronche ◽  
Qing Wang ◽  
Seppo Honkanen

2006 ◽  
Vol 42 (2) ◽  
pp. 152-159 ◽  
Author(s):  
J.A. Valles ◽  
M.A. Rebolledo ◽  
J. Cortes

2018 ◽  
Vol 11 (3) ◽  
pp. 291-295 ◽  
Author(s):  
Xiaoliang Shen ◽  
Yue Wang ◽  
Haitao Guo ◽  
Chunxiao Liu

2018 ◽  
Vol 27 (5) ◽  
pp. 054218 ◽  
Author(s):  
Qi-Feng Zhu ◽  
Yue Wang ◽  
Jian-Ping Shen ◽  
Hai-Tao Guo ◽  
Chun-Xiao Liu

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