Silicon nanophotonics: light emission, wavelength-selective waveguiding, and laser-induced thermal effects

2007 ◽  
Author(s):  
Leonid Khriachtchev ◽  
Markku Räsänen ◽  
Sergei Novikov
Keyword(s):  
Thermal Effects ◽  
Light Emission ◽  
Emission Wavelength ◽  
Silicon Nanophotonics

Strongly Superlinear Light Emission and Large Induced Absorption in Oxidized Porous Silicon Films

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Koyama ◽  
P. M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Thermal Effects ◽  
Light Emission ◽  
Laser Intensity ◽  
Excitation Intensity ◽  
Silicon Films ◽  
Free Standing ◽  
Induced Absorption ◽  
Cw Laser ◽  
Oxidized Porous Silicon

AbstractThe optical properties of oxidized free-standing porous silicon films excited by a cw laser have been investigated. It is found that samples oxidized at 800–950 °C show a strongly superlinear light emission at an excitation intensity of ∼10 W/cm2. This emission has a peak at 900–1100 nm and shows a blueshift as the oxidation temperature is increased. These samples also show a very large induced absorption, where the transmittance is found to decrease reversibly by ≤99.7 %.The induced absorption increases linearly with increasing pump laser intensity. Both the superlinear emission and the large induced absorption are quenched when the samples are attached to materials with a higher thermal conductivity, suggesting that laser-induced thermal effects are responsible for these phenomena.

scholarly journals Disentangling the effects of nanoscale structural variations on the light emission wavelength of single nano-emitters: InGaN/GaN multiquantum well nano-LEDs for a case study

Nanoscale ◽  
2014 ◽  
Vol 6 (20) ◽  
pp. 11953-11962 ◽  
Author(s):  
George Sarau ◽  
Martin Heilmann ◽  
Michael Latzel ◽  
Silke Christiansen
Keyword(s):  
Theoretical Approach ◽  
Light Emission ◽  
Emission Wavelength ◽  
Structural Variations ◽  
Multiquantum Well

A correlated experimental and theoretical approach to study quantitatively the strain – light emission relationship and surface-related phenomena in individual nano-emitters.

Thermal effects on light-emission properties of GaN LEDs grown by metal-organic vapor phase epitaxy

2007 ◽  
Vol 300 (1) ◽  
pp. 90-93 ◽  
Author(s):  
Tohru Honda ◽  
Toshiaki Kobayashi ◽  
Shinichi Egawa ◽  
Masaru Sawada ◽  
Koichi Sugimoto ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Thermal Effects ◽  
Light Emission ◽  
Vapor Phase Epitaxy ◽  
Emission Properties ◽  
Organic Vapor ◽  
Metal Organic

Improved Yellow Light Emission in the Achievement of Dichromatic White Light Emitting Diodes

2013 ◽  
Vol 1538 ◽  
pp. 371-375
Author(s):  
Zhao Si ◽  
Tongbo Wei ◽  
Jun Ma ◽  
Ning Zhang ◽  
Zhe Liu ◽  
...  
Keyword(s):  
Blue Light ◽  
White Light ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Dual Wavelength ◽  
Emission Wavelength ◽  
White Led ◽  
Yellow Light ◽  
Light Emitting ◽  
White Light Emitting Diodes

ABSTRACTA study about the achievement of dichromatic white light-emitting diodes (LEDs) was performed. A series of dual wavelength LEDs with different last quantum-well (LQW) structure were fabricated. The bottom seven blue light QWs (close to n-GaN layer) of the four samples were the same. The LQW of sample A was 3 nm, and that of sample B, C and D were 6 nm, a special high In content ultra-thin layer was inserted in the middle of the LQW of sample C and on top of that of sample D. XRD results showed In concentration fluctuation and good interface quality of the four samples. PL measurements showed dual wavelength emitting, the blue light peak position of the four samples were almost the same, sample A with a narrower LQW showed an emission wavelength much shorter than that of sample B, C, D. EL measurement was done at an injection current of 100 mA. Sample A only showed LQW emission due to holes distribution. Because of wider LQW, the emission wavelength of sample B, C and D was longer and peak intensity was weaker. Sample D with insert layer on top of LQW showed strongest yellow light emission with a blue peak. As the injection current increased, sample A showed highest output light power due to narrower LQW. Of the other three samples with wider LQW, sample D showed highest output power. Effective yellow light emission has always been an obstacle to the achievement of dichromatic white LED. Sample D with insert layer close to p-GaN can confine the hole distribution more effectively hence the recombination of holes and electrons was enhanced, the yellow light emission was improved and dichromatic white LED was achieved.

scholarly journals Thermal effects on light emission in Yb3+-sensitized rare-earth doped optical glasses

2001 ◽  
Vol 31 (1) ◽  
pp. 89-101 ◽  
Author(s):  
E. A. Gouveia ◽  
M. T. de Araujo ◽  
A. S. Gouveia-Neto
Keyword(s):  
Rare Earth ◽  
Thermal Effects ◽  
Light Emission ◽  
Optical Glasses ◽  
Rare Earth Doped

INVESTIGATIONS OF InGaN/GaN AND InGaN/InGaN QDS GROWN IN A WIDE PRESSURE MOCVD REACTOR

2007 ◽  
Vol 06 (05) ◽  
pp. 327-332
Author(s):  
D. S. SIZOV ◽  
V. S. SIZOV ◽  
V. V. LUNDIN ◽  
E. E. ZAVARIN ◽  
A. F. TSATSUL'NIKOV ◽  
...  
Keyword(s):  
Light Emission ◽  
Near Field ◽  
Matrix Material ◽  
Emission Wavelength ◽  
Energy Localization ◽  
Mocvd Reactor ◽  
The Matrix ◽  
Wide Pressure Range ◽  
Order Of Magnitude ◽  
Wide Pressure

InGaN quantum dot (QD) formation in a wide pressure range MOCVD reactor was studied. The existence of QDs and their lateral size (2–5 nm) were demonstrated using transmission electron microscopy and high spatial resolution (~ 100 nm) near-field magneto-photoluminescence spectroscopy. We found that an increase of the reactor pressure from 400 to 1000 mbar leads to an order of magnitude increase in light emission efficiency of the InGaN / GaN QDs accompanied by ~ 100 meV redshift of the emission wavelength. We explored stimulated phase separation (SPS) to control carrier localization and emission wavelength. The SPS was achieved by adding In in the matrix material. This leads to formation of extremely deep InGaN / InGaN QDs having energy localization up to ~ 0.8 eV, which was revealed from selectively excited far-field photoluminescence (PL) spectra. Without SPS the QD activation energy is found to be below 0.2 eV. A nonequilibrium carrier population strongly suppresses the temperature-induced shift of the PL emission in deep InGaN QDs.

A Gate Breakdown Mechanism in Mesfets and HEMTs

1991 ◽  
Vol 241 ◽  
Author(s):  
R. J. Trew ◽  
T. A. Winslow ◽  
U. K. Mishra
Keyword(s):  
Experimental Data ◽  
Thermal Effects ◽  
Light Emission ◽  
Avalanche Breakdown ◽  
Gate Electrode ◽  
Gate Current ◽  
Versus Bias ◽  
Breakdown Mechanism ◽  
Assisted Tunneling ◽  
First Time

ABSTRACTA model for gate breakdown in MESFETs and HEMTs is proposed. The model is based upon a combination of thermally assisted tunneling and avalanche breakdown. When thermal effects are considered it is demonstrated that the model predicts increasing drain-source breakdown as the gate electrode is biased towards pinch-off, in agreement with experimental data. The model also predicts, for the first time, the gate current versus bias behavior observed in experimental data. The model is consistent with the various reports of breakdown and light emission phenomena reported in the literature.

Renilla Bioluminescence: A Morphologic Approach to the Location of Photocytes

1974 ◽  
Vol 32 ◽  
pp. 208-209
Author(s):  
Ben O. Spurlock ◽  
Milton J. Cormier
Keyword(s):  
Excited State ◽  
Ground State ◽  
Molecular Basis ◽  
Light Emission ◽  
Chemical Basis ◽  
Electronic Excited State ◽  
Colonial Form ◽  
The Common ◽  
Eighteenth And Nineteenth Centuries ◽  
Catalyzed Oxidation

The phenomenon of bioluminescence has fascinated layman and scientist alike for many centuries. During the eighteenth and nineteenth centuries a number of observations were reported on the physiology of bioluminescence in Renilla, the common sea pansy. More recently biochemists have directed their attention to the molecular basis of luminosity in this colonial form. These studies have centered primarily on defining the chemical basis for bioluminescence and its control. It is now established that bioluminescence in Renilla arises due to the luciferase-catalyzed oxidation of luciferin. This results in the creation of a product (oxyluciferin) in an electronic excited state. The transition of oxyluciferin from its excited state to the ground state leads to light emission.

Thermal Considerations in Lens Regulator Systems

1970 ◽  
Vol 28 ◽  
pp. 358-359
Author(s):  
K.C. Newton
Keyword(s):  
Electron Microscope ◽  
Thermal Effects ◽  
Environmental Control ◽  
Reference Networks ◽  
Better Than

Thermal effects in lens regulator systems have become a major problem with the extension of electron microscope resolution capabilities below 5 Angstrom units. Larger columns with immersion lenses and increased accelerating potentials have made solutions more difficult by increasing the power being handled. Environmental control, component choice, and wiring design provide answers, however. Figure 1 indicates with broken lines where thermal problems develop in regulator systemsExtensive environmental control is required in the sampling and reference networks. In each case, stability better than I ppm/min. is required. Components with thermal coefficients satisfactory for these applications without environmental control are either not available or priced prohibitively.

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