Fast carrier dynamics in novel GaAs deep-centers for high-efficiency light-emitters for 1.3um-1.5um fiber optics

Application of a high-efficiency voice communication systems based on broadband over power line-power line communication (BPL-PLC) technology in medium voltage networks, including hazardous areas (like the oil and mining industry), as a redundant mean of wired communication (apart from traditional fiber optics and electrical wires) can be beneficial. Due to the possibility of utilizing existing electrical infrastructure, it can significantly reduce deployment costs. Additionally, it can be applied under difficult conditions, thanks to battery-powered devices. During an emergency situation (e.g., after coal dust explosion), the medium voltage cables are resistant to mechanical damage, providing a potentially life-saving communication link between the supervisor, rescue team, paramedics, and the trapped personnel. The assessment of such a system requires a comprehensive and accurate examination, including a number of factors. Therefore, various models were tested, considering: different transmission paths and types of coupling (inductive and capacitive), as well as various lengths of transmitted data packets. Next, a subjective quality evaluation study was carried out, considering speech signals from a number of languages (English, German, and Polish). Based on the obtained results, including both simulations and measurements, appropriate practical conclusions were formulated. Results confirmed the applicability of BPL-PLC technology as an efficient voice communication system for the oil and mining industry.

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GaAs/GaAsP nanowires containing quantum wells or dots for high-efficiency light-emitters (Conference Presentation)

Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI ◽

10.1117/12.2508558 ◽

2019 ◽

Author(s):

David J. Mowbray

Keyword(s):

Quantum Wells ◽

High Efficiency ◽

Light Emitters

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Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures

MRS Proceedings ◽

10.1557/proc-831-e3.38 ◽

2004 ◽

Vol 831 ◽

Cited By ~ 3

Author(s):

Y. Xia ◽

E. Williams ◽

Y. Park ◽

I. Yilmaz ◽

J.M. Shah ◽

...

Keyword(s):

High Efficiency ◽

Light Emitting Diode ◽

Carrier Dynamics ◽

Reverse Voltage ◽

Spatial Homogeneity ◽

Entire Area ◽

Light Emitting ◽

Gan Led ◽

Capacitance Voltage ◽

High Level

ABSTRACTA detailed modeling of the electronic bandstructure of GaInN alloys and GaInN/GaN heterostructures typically used for high efficiency light emitting diodes is of high relevance for future improvements. Here we are exploring opportunities to accurately quantify the carrier dynamics under forward and reverse voltage bias. In GaInN/GaN LED-type heterostructures we observe distinct steps in the junction capacitance as a function of bias voltage within the depletion regime. Up to three individual steps can be identified that correspond to alternating ranges of capacitive and resistive impedances. Our analysis suggests that we are quantitatively monitoring the electron concentration in each individual quantum well. The pronounced clarity of the data reveals a high level of epitaxial perfection and spatial homogeneity across the entire area of the junction.

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