Transition metal and rare earth-doped ZnO: a comparison of optical, magnetic, and structural behavior of bulk and thin films

Author(s):  
W. E. Fenwick ◽  
M. H. Kane ◽  
R. Varatharajan ◽  
T. Zaidi ◽  
Z. Fang ◽  
...  
2015 ◽  
Vol 2 (10) ◽  
pp. 5365-5372 ◽  
Author(s):  
Khurram Siraj ◽  
Jaweria Z. Hashmi ◽  
Shahzad Naseem ◽  
Muhammad S. Rafique ◽  
Saima Shaukat

2000 ◽  
Vol 366 (1-2) ◽  
pp. 63-68 ◽  
Author(s):  
Tadatsugu Minami ◽  
Takashi Yamamoto ◽  
Toshihiro Miyata

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 724
Author(s):  
Sara Massardo ◽  
Alessandro Cingolani ◽  
Cristina Artini

Rare earth-doped ceria thin films are currently thoroughly studied to be used in miniaturized solid oxide cells, memristive devices and gas sensors. The employment in such different application fields derives from the most remarkable property of this material, namely ionic conductivity, occurring through the mobility of oxygen ions above a certain threshold temperature. This feature is in turn limited by the association of defects, which hinders the movement of ions through the lattice. In addition to these issues, ionic conductivity in thin films is dominated by the presence of the film/substrate interface, where a strain can arise as a consequence of lattice mismatch. A tensile strain, in particular, when not released through the occurrence of dislocations, enhances ionic conduction through the reduction of activation energy. Within this complex framework, high pressure X-ray diffraction investigations performed on the bulk material are of great help in estimating the bulk modulus of the material, and hence its compressibility, namely its tolerance toward the application of a compressive/tensile stress. In this review, an overview is given about the correlation between structure and transport properties in rare earth-doped ceria films, and the role of high pressure X-ray diffraction studies in the selection of the most proper compositions for the design of thin films.


1986 ◽  
Vol 5 (7) ◽  
pp. 723-724 ◽  
Author(s):  
S. Bhushan ◽  
Deepti Diwan

2006 ◽  
Vol 957 ◽  
Author(s):  
William E. Fenwick ◽  
Matthew H. Kane ◽  
Zaili Fang ◽  
Tahir Zaidi ◽  
Nola Li ◽  
...  

ABSTRACTTransition metal-doped ZnO bulk crystals and thin films have been investigated to determine the effects of transition metal incorporation on optical, magnetic, and structural properties of ZnO. A modified melt growth technique was used to grow bulk Zn1-xMnxO, Zn1-xCoxO, and Zn1-xFexO. Optical transmission measurements show an apparent shift in absorption edge with increasing transition metal incorporation. Raman spectroscopy also shows increasing lattice disorder with increasing transition metal concentration. ZnO thin films doped with Ni, Co, and Gd were grown by metalorganic chemical vapor deposition (MOCVD). While the Co-doped thin films showed antiferromagnetic behavior, magnetic hysteresis was observed in the Ni-doped and Gd-doped thin films. Structural quality was verified with X-ray diffraction (XRD), and optical properties were investigated using room temperature photoluminescence (PL) and optical transmission measurements. Properties of ZnO:TM bulk crystals and thin films are compared and used to discuss possible origins of ferromagnetism in these materials.


2013 ◽  
Vol 88 (9) ◽  
Author(s):  
K. I. Doig ◽  
F. Aguesse ◽  
A. K. Axelsson ◽  
N. M. Alford ◽  
S. Nawaz ◽  
...  

2019 ◽  
Vol 546 (1) ◽  
pp. 120-128 ◽  
Author(s):  
Yan Liu ◽  
Nan Ding ◽  
Guang-Rui Gu ◽  
Bao-Jia Wu

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