Numerical simulation of temperature-dependence on distributed Bragg reflector (DBR) and performance analyses for proton-implant/oxide confined VCSEL: comparison with transmission matrix, matrix calculating methods and Macleod model

2007 ◽  
Author(s):  
Hong-Mau Tsai ◽  
Shiang-Feng Tang ◽  
Shih-Tsang Sua ◽  
Tzu-Chiang Chen ◽  
Cheng-Der Chiang
Keyword(s):  
Numerical Simulation ◽  
Temperature Dependence ◽  
Bragg Reflector ◽  
Transmission Matrix ◽  
Distributed Bragg Reflector ◽  
Performance Analyses ◽  
And Performance

scholarly journals High reflectance III-Nitride Bragg reflectors grown by molecular beam epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 28-34
Author(s):  
H. M. Ng ◽  
T. D. Moustakas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Bragg Reflector ◽  
Transmission Matrix ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflector ◽  
Reflectance Data ◽  
Resonance Plasma ◽  
High Reflectance

Distributed Bragg reflector (DBR) structures based on AlN/GaN have been grown on (0001) sapphire by electron-cyclotron-resonance plasma-assisted molecular-beam epitaxy (ECR-MBE). The design of the structures was predetermined by simulations using the transmission matrix method. A number of structures have been grown with 20.5 – 25.5 periods showing peak reflectance ranging from the near-UV to the green wavelength regions. For the best sample, peak reflectance up to 99% was observed centered at 467 nm with a bandwidth of 45 nm. The experimental reflectance data were compared with the simulations and show excellent agreement with respect to peak reflectance, bandwidth of high reflectance and the locations of the sidelobes.

High Reflectance III-Nitride Bragg Reflectors Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
H. M. Ng ◽  
T. D. Moustakas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Bragg Reflector ◽  
Transmission Matrix ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflector ◽  
Reflectance Data ◽  
Resonance Plasma ◽  
High Reflectance

AbstractDistributed Bragg reflector (DBR) structures based on AlN/GaN have been grown on (0001) sapphire by electron-cyclotron-resonance plasma-assisted molecular-beam epitaxy (ECR-MBE). The design of the structures was predetermined by simulations using the transmission matrix method. A number of structures have been grown with 20.5 – 25.5 periods showing peak reflectance ranging from the near-UV to the green wavelength regions. For the best sample, peak reflectance up to 99% was observed centered at 467 nm with a bandwidth of 45 nm. The experimental reflectance data were compared with the simulations and show excellent agreement with respect to peak reflectance, bandwidth of high reflectance and the locations of the sidelobes.

Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes

2001 ◽  
Vol 79 (25) ◽  
pp. 4076-4078 ◽  
Author(s):  
C. Marinelli ◽  
M. Bordovsky ◽  
L. J. Sargent ◽  
M. Gioannini ◽  
J. M. Rorison ◽  
...  
Keyword(s):  
Performance Analysis ◽  
Laser Diodes ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
And Performance
Sign in / Sign up

Export Citation Format

Share Document