A new I-V model for light emitting devices with a quantum well

2006 ◽  
Author(s):  
Chin C. Lee ◽  
Winnie Chen ◽  
Jeong Park
Keyword(s):  
Quantum Well ◽  
Light Emitting ◽  
Light Emitting Devices

scholarly journals Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 237
Author(s):  
Mateusz Hajdel ◽  
Mikolaj Chlipała ◽  
Marcin Siekacz ◽  
Henryk Turski ◽  
Paweł Wolny ◽  
...  
Keyword(s):  
Quantum Well ◽  
Emission Spectra ◽  
Spatial Separation ◽  
Blue Shift ◽  
Electroluminescence Spectrum ◽  
Complex Spectrum ◽  
Optical Transitions ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Current Densities

The design of the active region is one of the most crucial problems to address in light emitting devices (LEDs) based on III-nitride, due to the spatial separation of carriers by the built-in polarization. Here, we studied radiative transitions in InGaN-based LEDs with various quantum well (QW) thicknesses—2.6, 6.5, 7.8, 12, and 15 nm. In the case of the thinnest QW, we observed a typical effect of screening of the built-in field manifested with a blue shift of the electroluminescence spectrum at high current densities, whereas the LEDs with 6.5 and 7.8 nm QWs exhibited extremely high blue shift at low current densities accompanied by complex spectrum with multiple optical transitions. On the other hand, LEDs with the thickest QWs showed a stable, single-peak emission throughout the whole current density range. In order to obtain insight into the physical mechanisms behind this complex behavior, we performed self-consistent Schrodinger–Poisson simulations. We show that variation in the emission spectra between the samples is related to changes in the carrier density and differences in the magnitude of screening of the built-in field inside QWs. Moreover, we show that the excited states play a major role in carrier recombination for all QWs, apart from the thinnest one.

ZnCdTe/ZnTe/ZnMgSeTe quantum-well structures for the application to pure-green light-emitting devices

2001 ◽  
Vol 78 (5) ◽  
pp. 566-568 ◽  
Author(s):  
J. H. Chang ◽  
J. S. Song ◽  
K. Godo ◽  
T. Yao ◽  
M. Y. Shen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Green Light ◽  
Light Emitting ◽  
Quantum Well Structures ◽  
Light Emitting Devices

Effect of Multiple-Quantum-Well Structure on Efficiency of Organic Electrophosphorescent Light-Emitting Devices

2003 ◽  
Vol 42 (Part 2, No. 4A) ◽  
pp. L376-L378 ◽  
Author(s):  
Gang Cheng ◽  
Song Qiu ◽  
Feng Li ◽  
Jing Feng ◽  
Yuguang Ma ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Quantum Well Structure
Sign in / Sign up

Export Citation Format

Share Document