The influence of molecular weight on the microstructure and thin film transistor characteristics of pBTTT polymers.

2006 ◽  
Author(s):  
Rick Hamilton ◽  
Clare Bailey ◽  
Warren Duffy ◽  
Martin Heeney ◽  
Maxim Shkunov ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Weight ◽  
Thin Film Transistor

scholarly journals Variation of the Side Chain Branch Position Leads to Vastly Improved Molecular Weight and OPV Performance in 4,8-dialkoxybenzo[1,2-b:4,5-b′]dithiophene/2,1,3-benzothiadiazole Copolymers

2011 ◽  
Vol 2011 ◽  
pp. 1-10 ◽  
Author(s):  
Robert C. Coffin ◽  
Christopher M. MacNeill ◽  
Eric D. Peterson ◽  
Jeremy W. Ward ◽  
Jack W. Owen ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Weight ◽  
Thin Film Transistor ◽  
Power Conversion ◽  
Hole Mobility ◽  
Side Chain ◽  
Side Chains ◽  
Absorption Profile ◽  
Polymer Backbone ◽  
Chain Branch

Through manipulation of the solubilizing side chains, we were able to dramatically improve the molecular weight(Mw)of 4,8-dialkoxybenzo[1,2-b:4,5-b′]dithiophene (BDT)/2,1,3-benzothiadiazole (BT) copolymers. When dodecyl side chains (P1) are employed at the 4- and 8-positions of the BDT unit, we obtain a chloroform-soluble copolymer fraction withMwof 6.3 kg/mol. Surprisingly, by moving to the commonly employed 2-ethylhexyl branch (P2),Mwdecreases to 3.4 kg/mol. This is despite numerous reports that this side chain increases solubility andMw. By moving the ethyl branch in one position relative to the polymer backbone (1-ethylhexyl,P3),Mwis dramatically increased to 68.8 kg/mol. As a result of thisMwincrease, the shape of the absorption profile is dramatically altered, withλmax= 637 nm compared with 598 nm forP1and 579 nm forP2. The hole mobility as determined by thin film transistor (TFT) measurements is improved from~1×10−6 cm2/Vs forP1andP2to7×10−4 cm2/Vs forP3, while solar cell power conversion efficiency in increased to2.91%forP3relative to0.31%and0.19%forP1andP2, respectively.

Effect of transient behavior on off-state current in poly-Si junctionless nanowire thin-film transistor

2020 ◽  
Vol 59 (12) ◽  
pp. 126503
Author(s):  
Tsung-Kuei Kang ◽  
Che-Fu Hsu ◽  
Han-Wen Liu ◽  
Feng-Tso Chien ◽  
Cheng-Li Lin
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Transient Behavior

Laser annealing of metal oxide thin film transistor

2020 ◽  
Vol 35 (12) ◽  
pp. 1211-1221
Author(s):  
Hong-long NING ◽  
◽  
Yu-xi DENG ◽  
Jian-lang HUANG ◽  
Zi-long LUO ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film

Improved Thin-Film Transistor Performance Through a Melt of Poly(para-phenyleneethynylene)

2014 ◽  
Vol 35 (20) ◽  
pp. 1770-1775 ◽  
Author(s):  
Stefanie Schmid ◽  
Anne K. Kast ◽  
Rasmus R. Schröder ◽  
Uwe H. F. Bunz ◽  
Christian Melzer
Keyword(s):  
Thin Film ◽  
Thin Film Transistor

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

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