Femtosecond laser beam in interaction with materials for thin film deposition

Author(s):  
Chantal Boulmer-Leborgne ◽  
Ratiba Benzerga ◽  
Deborah Scuderi ◽  
Jacques Perrière ◽  
Olivier Albert ◽  
...  
MRS Bulletin ◽  
1992 ◽  
Vol 17 (2) ◽  
pp. 30-36 ◽  
Author(s):  
Jeff Cheung ◽  
Jim Horwitz

The laser, as a source of “pure” energy in the form of monochromatic and coherent photons, is enjoying ever increasing popularity in diverse and broad applications from drilling micron-sized holes on semiconductor devices to guidance systems used in drilling a mammoth tunnel under the English Channel. In many areas such as metallurgy, medical technology, and the electronics industry, it has become an irreplaceable tool.Like many other discoveries, the various applications of the laser were not initially defined but were consequences of natural evolution led by theoretical studies. Shortly after the demonstration of the first laser, the most intensely studied theoretical topics dealt with laser beam-solid interactions. Experiments were undertaken to verify different theoretical models for this process. Later, these experiments became the pillars of many applications. Figure 1 illustrates the history of laser development from its initial discovery to practical applications. In this tree of evolution, Pulsed Laser Deposition (PLD) is only a small branch. It remained relatively obscure for a long time. Only in the last few years has his branch started to blossom and bear fruits in thin film deposition.Conceptually and experimentally, PLD is extremely simple, probably the simplest among all thin film growth techniques. Figure 2 shows a schematic diagram of this technique. It uses pulsed laser radiation to vaporize materials and to deposit thin films in a vacuum chamber. However, the beam-solid interaction that leads to evaporation/ablation is a very complex physical phenomenon. The theoretical description of the mechanism is multidisciplinary and combines equilibrium and nonequilibrium processes. The impact of a laser beam on the surface of a solid material, electromagnetic energy is converted first into electronic excitation and then into thermal, chemical, and even mechanical energy to cause evaporation, ablation, excitation, and plasma formation.


Author(s):  
Alexandr V. Dostovalov ◽  
Kirill A. Bronnikov ◽  
Dmitrii A. Belousov ◽  
Victor P. Korolkov ◽  
Sergey A. Babin

2017 ◽  
Vol 417 ◽  
pp. 155-159 ◽  
Author(s):  
Aleksander G. Kovačević ◽  
Suzana Petrović ◽  
Vladimir Lazović ◽  
Davor Peruško ◽  
Dejan Pantelić ◽  
...  

1999 ◽  
Vol 70 (4) ◽  
pp. 2116-2121 ◽  
Author(s):  
C. L. S. Lewis ◽  
I. Weaver ◽  
L. A. Doyle ◽  
G. W. Martin ◽  
T. Morrow ◽  
...  

2003 ◽  
Author(s):  
Ruediger Grunwald ◽  
Volker Kebbel ◽  
Uwe Griebner ◽  
Uwe Neumann ◽  
Andreas Kummrow ◽  
...  

2017 ◽  
Vol 418 ◽  
pp. 425-429 ◽  
Author(s):  
A. Talbi ◽  
C. Tchiffo Tameko ◽  
A. Stolz ◽  
E. Millon ◽  
C. Boulmer-Leborgne ◽  
...  

Author(s):  
M. Grant Norton ◽  
C. Barry Carter

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.


Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.


Sign in / Sign up

Export Citation Format

Share Document