Optical thin films for high power LD-pumped Nd: YVO 4 457 nm blue laser

2006 ◽  
Author(s):  
Yikun Bu ◽  
Quan Zheng ◽  
Qinghua Xue ◽  
Longsheng Qian
Keyword(s):  
Thin Films ◽  
High Power ◽  
Blue Laser

Ultra-sensitive Absorption Diagnostics of Thin Films for High-power Laser Interference Coatings

2015 ◽  
Author(s):  
Jorge G. Rocca ◽  
Oscar E. Martinez ◽  
Carmen Menoni ◽  
Esteban Domene
Keyword(s):  
Thin Films ◽  
High Power ◽  
High Power Laser ◽  
Laser Interference ◽  
Power Laser

scholarly journals High Power Impulse Magnetron Sputtering of In2O3/Sn Cold Sprayed Composite Target

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Author(s):  
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Voltage ◽  
High Power ◽  
Power Supply ◽  
Indium Tin Oxide ◽  
Volume Ratio ◽  
Cold Spraying ◽  
High Voltage Power Supply ◽  
Composite Target

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.

Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations

2021 ◽  
Author(s):  
Xiao Tang ◽  
Kuanghui Li ◽  
Che-Hao Liao ◽  
Dongxing Zheng ◽  
chen Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Gas Sensors ◽  
High Power ◽  
Wide Bandgap ◽  
Semiconductor Material ◽  
Uv Detectors ◽  
Wide Bandgap Semiconductor ◽  
Fourfold Symmetry

β-Ga2O3 is a wide bandgap semiconductor material promising for many fields such as gas sensors, UV detectors, and high power electronics. Until now, most epitaxial β-Ga2O3 thin films could only...

scholarly journals Scalable, high power line focus diode laser for crystallizing of silicon thin films

2010 ◽  
Vol 5 ◽  
pp. 109-117 ◽  
Author(s):  
N. Lichtenstein ◽  
R. Baettig ◽  
R. Brunner ◽  
J. Müller ◽  
B. Valk ◽  
...  
Keyword(s):  
Thin Films ◽  
Diode Laser ◽  
High Power ◽  
Power Line ◽  
Silicon Thin Films ◽  
Line Focus

Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

2015 ◽  
Vol 33 (2) ◽  
pp. 021518 ◽  
Author(s):  
Milena A. Moreira ◽  
Tobias Törndahl ◽  
Ilia Katardjiev ◽  
Tomas Kubart
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Power

scholarly journals Spinel oxides thin films for write-once optical recording with blue laser sources

2002 ◽  
Vol 2 (4) ◽  
pp. 198-201 ◽  
Author(s):  
Philippe Tailhades ◽  
Lionel Presmanes ◽  
Isabelle Pasquet ◽  
Corine Bonningue ◽  
Fabien Laporte
Keyword(s):  
Thin Films ◽  
Optical Recording ◽  
Blue Laser ◽  
Spinel Oxides ◽  
Laser Sources
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