Large area deposition technique of magnesium oxide thin film for plasma display panel applications

2006 ◽  
Author(s):  
Young-Wook Choi ◽  
Jeehyun Kim
Keyword(s):  
Thin Film ◽  
Magnesium Oxide ◽  
Oxide Thin Film ◽  
Deposition Technique ◽  
Plasma Display Panel ◽  
Large Area ◽  
Plasma Display ◽  
Area Deposition

The effect of Fe-doped magnesium oxide thin film in alternative current plasma display panel

2009 ◽  
Vol 517 (14) ◽  
pp. 4152-4155 ◽  
Author(s):  
Jung-Woo Ok ◽  
Don-Kyu Lee ◽  
Dong-Hyun Kim ◽  
Hae June Lee ◽  
Ho-Jun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnesium Oxide ◽  
Oxide Thin Film ◽  
Plasma Display Panel ◽  
Plasma Display ◽  
Alternative Current

Effect of magnesium oxide passivation on the performance of amorphous indium–gallium–zinc-oxide thin film transistors

2012 ◽  
Vol 520 (10) ◽  
pp. 3783-3786 ◽  
Author(s):  
Dong Youn Yoo ◽  
Eugene Chong ◽  
Do Hyung Kim ◽  
Byeong Kwon Ju ◽  
Sang Yeol Lee
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Magnesium Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

scholarly journals Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

2010 ◽  
Vol 2010 ◽  
pp. 1-27 ◽  
Author(s):  
Michael Lorenz ◽  
Holger Hochmuth ◽  
Christoph Grüner ◽  
Helena Hilmer ◽  
Alexander Lajn ◽  
...  
Keyword(s):  
Thin Film ◽  
Dislocation Density ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Organic Chemical ◽  
Large Area ◽  
Low Dislocation Density

Advanced Pulsed Laser Deposition (PLD) processes allow the growth of oxide thin film heterostructures on large area substrates up to 4-inch diameter, with flexible and controlled doping, low dislocation density, and abrupt interfaces. These PLD processes are discussed and their capabilities demonstrated using selected results of structural, electrical, and optical characterization of superconducting (YBa2Cu3O7−δ), semiconducting (ZnO-based), and ferroelectric (BaTiO3-based) and dielectric (wide-gap oxide) thin films and multilayers. Regarding the homogeneity on large area of structure and electrical properties, flexibility of doping, and state-of-the-art electronic and optical performance, the comparably simple PLD processes are now advantageous or at least fully competitive to Metal Organic Chemical Vapor Deposition or Molecular Beam Epitaxy. In particular, the high flexibility connected with high film quality makes PLD a more and more widespread growth technique in oxide research.

Chemical durability engineering of solution-processed oxide thin films and its application in chemically-robust patterned oxide thin-film transistors

2017 ◽  
Vol 5 (2) ◽  
pp. 339-349 ◽  
Author(s):  
Sung Woon Cho ◽  
Da Eun Kim ◽  
Won Jun Kang ◽  
Bora Kim ◽  
Dea Ho Yoon ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Treatment ◽  
Thin Film Transistors ◽  
Oxide Films ◽  
Chemical Durability ◽  
Oxide Thin Film ◽  
Large Area ◽  
Solution Processed ◽  
Circuit Integration

The chemical durability of solution-processed oxide films was engineered via Sn-incorporation and thermal-treatment, which was applied for large-area TFT circuit integration.

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