The effect of intermediate layers on the internal electric field in organic semiconductor devices

2006 ◽  
Author(s):  
Christoph Lungenschmied ◽  
Gilles Dennler ◽  
Eitan Ehrenfreund ◽  
Helmut Neugebauer ◽  
Niyazi Serdar Sariciftci
Keyword(s):  
Electric Field ◽  
Organic Semiconductor ◽  
Semiconductor Devices ◽  
Internal Electric Field ◽  
Intermediate Layers ◽  
Organic Semiconductor Devices

On the minimum thickness of doped electron/hole transport layers in organic semiconductor devices

2021 ◽  
Vol 130 (12) ◽  
pp. 125502
Author(s):  
D. Oussalah ◽  
R. Clerc ◽  
J. Baylet ◽  
R. Paquet ◽  
C. Sésé ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Semiconductor Devices ◽  
Hole Transport ◽  
Minimum Thickness ◽  
Electron Hole ◽  
Hole Transport Layers ◽  
Organic Semiconductor Devices

scholarly journals Graphene-passivated nickel as an efficient hole-injecting electrode for large area organic semiconductor devices

2020 ◽  
Vol 116 (16) ◽  
pp. 163301 ◽  
Author(s):  
Daniele Di Nuzzo ◽  
Ryo Mizuta ◽  
Kenichi Nakanishi ◽  
Marie-Blandine Martin ◽  
Adrianus I. Aria ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Semiconductor Devices ◽  
Large Area ◽  
Organic Semiconductor Devices

Modeling observed capacitance–voltage hysteresis in metal–SiO2-thin film organic semiconductor devices

2006 ◽  
Vol 50 (6) ◽  
pp. 1097-1104 ◽  
Author(s):  
Darrell Niemann ◽  
Norman Gunther ◽  
Charles Kwong ◽  
Mark Barycza ◽  
Mahmud Rahman
Keyword(s):  
Thin Film ◽  
Organic Semiconductor ◽  
Semiconductor Devices ◽  
Sio2 Thin Film ◽  
Capacitance Voltage ◽  
Organic Semiconductor Devices ◽  
Voltage Hysteresis
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