Silicon based laser, amplifier, and wavelength converter for optoelectronic integration

2006 ◽  
Author(s):  
Haisheng Rong ◽  
Richard Jones ◽  
Ansheng Liu ◽  
Oded Cohen ◽  
Ying-Hao Kuo ◽  
...  
Keyword(s):  
Laser Amplifier ◽  
Wavelength Converter ◽  
Optoelectronic Integration ◽  
Silicon Based

scholarly journals Silicon Raman laser, amplifier, and wavelength converter (Keynote Paper)

2005 ◽  
Author(s):  
Bahram Jalali ◽  
Ozdal Boyraz ◽  
Dimitri Dimitropoulos ◽  
Varun Raghunathan
Keyword(s):  
Raman Laser ◽  
Laser Amplifier ◽  
Wavelength Converter ◽  
Keynote Paper

Silicon based mechanic-photonic wavelength converter for infrared photo-detection

2017 ◽  
Vol 392 ◽  
pp. 114-118 ◽  
Author(s):  
Arkady Rudnitsky ◽  
Sergey Agdarov ◽  
Konstantin Gulitsky ◽  
Zeev Zalevsky
Keyword(s):  
Wavelength Converter ◽  
Photo Detection ◽  
Silicon Based

Deposition of ternary silicon based compounds by CVD techniques

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  
Silicon Based

CVD mullite and mullite-alumina corrosion protection coatings for silicon based ceramics

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-861-Pr3-867 ◽  
Author(s):  
S. M. Zemskova ◽  
J. A. Haynes ◽  
K. M. Cooley
Keyword(s):  
Corrosion Protection ◽  
Silicon Based

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

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