Porous silicon-based Bragg reflectors and Fabry-Perot interference filters for photonic applications

2006 ◽  
Author(s):  
Dharmalingam Mangaiyarkarasi ◽  
Mark B.H. Breese ◽  
Ow Yueh Sheng ◽  
Kambiz Ansari ◽  
Chellappan Vijila ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Bragg Reflectors ◽  
Interference Filters ◽  
Fabry Perot ◽  
Silicon Based

Elaboration and Light Emission Properties of Low Doped p-Type Porous Silicon Microcavities

1996 ◽  
Vol 452 ◽  
Author(s):  
G. Lérondel ◽  
P. Ferrand ◽  
R. Romestain
Keyword(s):  
Porous Silicon ◽  
Near Infrared ◽  
Light Emission ◽  
Narrow Band ◽  
Bragg Reflectors ◽  
Strong Emission ◽  
Luminescence Efficiency ◽  
Fabry Perot ◽  
Current Densities ◽  
P Type

AbstractWe account for the elaboration of Bragg reflectors and microcavities based on efficiently luminescent porous silicon. A characterisation of very thin porous silicon layers obtained with current densities of formation varying from 1.5 mA to 300 mA is presented. The resulting refractive index variation (typically from 1.37 to 1.86 at 700 nm) enables the elaboration of high quality Bragg reflectors and Fabry-Perot filters from the yellow to the near infrared. Although low doped p-type porous silicon develops rougher interfaces than highly doped p-type porous silicon, its better luminescence efficiency has enabled us to elaborate microcavities with a strong emission in a narrow band.

Porous silicon-based optical fiber Fabry-Perot sensor for relative humidity determination

2011 ◽  
Author(s):  
Guoguang Rong ◽  
Shengfei Pan ◽  
Chao Wu ◽  
Xiaobing Li ◽  
Minghong Yang
Keyword(s):  
Porous Silicon ◽  
Relative Humidity ◽  
Optical Fiber ◽  
Fabry Perot ◽  
Silicon Based

Reflectivity Modelling of All-Porous-Silicon Distributed Bragg Reflectors and Fabry-Perot Microcavities

2005 ◽  
Vol 10 (1) ◽  
pp. 83-91 ◽  
Author(s):  
N. Samuolienė ◽  
E. Šatkovskis
Keyword(s):  
Porous Silicon ◽  
Wavelength Range ◽  
Active Layer ◽  
Optical Parameters ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Bragg Mirror ◽  
Number Of Layers ◽  
Fabry Perot ◽  
The Impact

Herein, the problem of nanocrystaline silicon laser and its importance in microelectronics are discussed upon. The features of vertical Fabry-Perot microcavities made on the base of porous silicon are described. The responses of the reflectivity of the distributed reflection Bragg mirrors and Fabry-Perot microcavities were found using transfer matrixes method for this purpose. Inherent optical parameters of porous silicon, deposited by electrochemical etch, were used in the calculations. The calculation of the reflectivity of the distributed reflection Bragg mirrors with front active layer of nanostructural porous silicon had been examined. In the second part, the features of Fabry-Perot microcavities on variation of the number of layers of the front or rear mirrors are described. The impact of the thickness of the active nanocrystaline silicon spacer between two distributed reflection Bragg mirrors upon the spectra of optical reflectivity of Fabry-Perot microcavities in the wavelength range of 0.4–0.9 µm had been examined as well. The made conclusions are important for improvement of the thickness of the active porous silicon spacer in front of Bragg mirror and the features of Fabry-Perot microcavities.

Development of a Porous Silicon Based Biosensor

1998 ◽  
Vol 536 ◽  
Author(s):  
Keiki-Pua S. Dancil ◽  
Douglas P. Greiner ◽  
Michael J. Sailor
Keyword(s):  
Porous Silicon ◽  
Protein Interactions ◽  
Optical Cavity ◽  
Protein A ◽  
Longitudinal Optical ◽  
Thin Layers ◽  
Protein Protein Interactions ◽  
Cavity Modes ◽  
Fabry Perot ◽  
Silicon Based

AbstractIn this paper we demonstrate that porous silicon (PS) can be used as an immobilization matrix and a transducer for biosensor applications. Thin layers of PS were fabricated showing fine structure in their reflection spectra, characteristic of longitudinal optical cavity modes, or Fabry-Perot interference fringes. The PS surface was modified by covalently bonding streptavidin to a heterobifunctional linker immobilized to the surface using common silane chemistry. The mode spacing and wavelength in the interference spectrum was modified, by displacing buffer and introducing proteins into the PS layer. Protein-protein interactions between immobilized Streptavidin and biotinylated Protein A followed by Protein A and IgG were detected. The surface was regenerated during the course of the experiment showing reversibility of the sensor at the third layer.

Optical Properties of Non-Periodic Dielectric Systems Made of Nanostructured Porous Silicon

2009 ◽  
Vol 5 ◽  
pp. 69-78 ◽  
Author(s):  
B. Alvarado Tenorio ◽  
J. Escorcia-Garcia ◽  
Miguel Eduardo Mora-Ramos ◽  
V. Agarwal
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Optical Thickness ◽  
Periodic Structures ◽  
Period Doubling ◽  
Interference Filters ◽  
Transfer Matrix Approach ◽  
Multilayered Systems ◽  
Random Structures ◽  
Silicon Based

To investigate the optical properties in non-periodic dielectric systems, we study here the reflection of light from nanostructured porous-silicon-based period doubling heterostructures. The multilayered systems are fabricated in such a way that the optical thickness of each layer is one quarter of 650nm. The results for the optical reflectance are presented and compared with that of Fibonacci, Thue-Morse, and random structures fabricated under the same conditions. Numerical simulation for the reflectance along the lines of the transfer matrix approach is performed. In addition, optical reflection from Gaussian porous silicon multilayers is also briefly discussed. We find that porous silicon Period Doubling dielectric multilayers could demonstrate the optical properties similar to the classical periodic Febry-Perot interference filters with one or multiple resonant peaks, but with an advantage of having total optical thickness much lesser than that of the periodic structures.

Optical devices based on anisotropically nanostructured silicon

2003 ◽  
Vol 797 ◽  
Author(s):  
J. Diener ◽  
N. Künzner ◽  
E. Gross ◽  
D. Kovalev ◽  
M. Fujii
Keyword(s):  
Refractive Index ◽  
Porous Silicon ◽  
Three Dimensional ◽  
Growth Direction ◽  
Optical Devices ◽  
Bragg Reflectors ◽  
Bulk Silicon ◽  
Nanostructured Silicon ◽  
Dimensional Variation ◽  
Silicon Based

ABSTRACTAnisotropic nanostructuring of bulk silicon (Si) leads to a significant optical anisotropy of single porous silicon (PSi) layers. A variation of the etching current in time allows a controlled modification of the porosity along the growth direction and therefore a three-dimensional variation of the refractive index (in plane an in depth). This technique can be important for photonic applications since it is the basis of a development of a variety of novel, polarization sensitive, silicon-based optical devices: retarders, dichroic Bragg Reflectors, dichroic microcavities and Si based polarizers.

Optical Interference Filters Made of Porous Silicon

1996 ◽  
Vol 431 ◽  
Author(s):  
M. Thönissen ◽  
M. G. Berger ◽  
M. Krüger ◽  
S. Billat ◽  
R. Arens-Fischer ◽  
...  
Keyword(s):  
Refractive Index ◽  
Porous Silicon ◽  
Current Density ◽  
Layer Structure ◽  
Single Layer ◽  
Bragg Reflectors ◽  
Optical Interference ◽  
Interference Filters ◽  
Thickness Measurements ◽  
Reflectance Measurements

AbstractPorous silicon (PS) layers can easily be formed by an electrochemical etch process using a mixture of hydrofluoric acid (HF) and ethanol. The microstructure and porosity of the layers depend on the HF concentration, the doping level of the substrate and the current density applied during the etch process. Changing the current density during the etch process will result in a well defined layer structure consisting of layers with different porosities. Each single layer can be treated as an effective medium exhibiting a refractive index depending mainly on the porosity of the layer. Using reflectance measurements we have investigated the dependence of the refractive index of PS layers on the formation current density for different substrates. In addition the etch rate was determined by thickness measurements with an electron microscope. Based on these results various kinds of optical interference filters were studied. We have formed samples consisting of discrete single layers with different porosities (e.g. Bragg reflectors) as well as samples with continuous variation of the refractive index (rugate filters). Combining these PS filters with standard photolithography steps, microoptical devices such as spectral sensitive photodiodes can be realized.

Improved Interference Filter Structures Made of Porous Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
M. Thönissen ◽  
M. G. Berger ◽  
M. Krüger ◽  
W. Theiβ ◽  
S. Hilbrich ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Interference Filter ◽  
Refractive Indices ◽  
Bragg Reflectors ◽  
Continuous Change ◽  
Specific Design ◽  
Fabry Perot ◽  
Current Densities ◽  
Substrate Doping ◽  
Filter Structures

AbstractRecently passive optical devices like filter structures or waveguides based on porous silicon have attracted high interest due to their easy and cheap fabrication. We have formed interference filters using porous silicon by changing the current density during formation. For the specific design of these filter structures a calibration of the etch rate and the refractive indices is required. Therefore we have determined the effective dielectric function for different substrate doping levels and anodization current densities by fitting reflectance spectra. Based on these results different kinds of reflectance filters consisting of discrete layers (Bragg reflectors, Fabry-Perot filters) as well as filters with a continuous change of the refractive indices with depth (rugate-filters) can be realised. Furthermore we present applications of these filter structures such as anti-reflectance coatings and high quality mirrors.

scholarly journals Simple method for measuring the porosity, thickness and refractive index of porous silicon, based on the Fabry-Pérot interference spectrum

2017 ◽  
Vol 35 (3) ◽  
pp. 117 ◽  
Author(s):  
Tiago Franca Paes ◽  
Antonio Fernando Beloto ◽  
Ellen Christine De Souza Galvão ◽  
Luiz Angelo Berni
Keyword(s):  
Refractive Index ◽  
Porous Silicon ◽  
Simple Method ◽  
Interference Spectrum ◽  
Fabry Perot ◽  
Silicon Based
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