Feasibility of conventional method of extracting internal loss and internal quantum efficiency in edge-emitting quantum dot lasers

2006 ◽  
Author(s):  
Levon V. Asryan
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
Conventional Method ◽  
Internal Quantum Efficiency ◽  
Quantum Dot Lasers ◽  
Internal Loss

Effects of Spacer Thickness on the Performance of InGaAs/GaAs Quantum Dot Lasers

2000 ◽  
Vol 642 ◽  
Author(s):  
Nien-Tze Yeh ◽  
Wei-Shen Liu ◽  
Shu-Han Chen ◽  
Jen-Inn Chyi
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Inhomogeneous Broadening ◽  
Quantum Dot Lasers ◽  
Low Threshold ◽  
Spacer Thickness ◽  
Gaas Quantum Dot

ABSTRACTIt is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.

Vertically Coupled Quantum Dot Lasers: First Device Oriented Structures with High Internal Quantum Efficiency

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 4219-4220 ◽  
Author(s):  
Sergey V. Zaitsev ◽  
Nikita Yu. Gordeev ◽  
Vladimir I. Kopchatov ◽  
Victor M. Ustinov ◽  
Alexy E. Zhukov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Quantum Dot Lasers

scholarly journals Sensitivity Analysis of GaN/AlGaN Quantum Dot Based Led

2021 ◽  
Author(s):  
Sumathi Kandasamy ◽  
Nagarajan K K ◽  
Srinivasan R
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
Performance Metrics ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Optical Gain ◽  
Input Power ◽  
Geometrical Parameters ◽  
Significant Parameter ◽  
The Impact

Abstract The impact of various geometrical parameters and doping parameters on the performance of GaN/AlGaN quantum dot-based light-emitting diode using 3D numerical simulations have been studied in this work. The parameters are ranked based on their sensitivity coefficients. Four important performance metrics, (i) internal quantum efficiency, (ii) responsivity, (iii) optical gain, and (iv) input power are used for this study. The bottom radius of the quantum dot is found to be the most significant parameter with respect to the internal quantum efficiency and optical gain. Nanocolumn radius is the most significant parameter with respect to Responsivity and input power. The overall ranking suggests that the Nanocolumn radius is the most sensitive parameter.

scholarly journals Internal quantum efficiency of AlGaN/AlN quantum dot superlattices for electron-pumped ultraviolet sources

2020 ◽  
Vol 31 (50) ◽  
pp. 505205
Author(s):  
A Harikumar ◽  
F Donatini ◽  
C Bougerol ◽  
E Bellet-Amalric ◽  
Q -M Thai ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency

Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer

2010 ◽  
Vol 8 (2) ◽  
pp. 464-466 ◽  
Author(s):  
Kenichiro Takeda ◽  
Kengo Nagata ◽  
Tomoki Ichikawa ◽  
Kentaro Nonaka ◽  
Yuji Ogiso ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Laser Diodes ◽  
Ultraviolet Laser ◽  
Low Dislocation Density ◽  
Internal Loss
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