Achieving narrow linewidth low-phase noise external cavity semiconductor lasers through the reduction of 1/f noise

2006 ◽  
Author(s):  
Robert E. Bartolo ◽  
Clay K. Kirkendall ◽  
Vladimir Kupershmidt ◽  
Sabeur Siala
Keyword(s):  
Phase Noise ◽  
Semiconductor Lasers ◽  
External Cavity ◽  
Narrow Linewidth ◽  
External Cavity Semiconductor Lasers ◽  
Low Phase Noise

scholarly journals Optical Sideband Injection Locking Using Waveguide Based External Cavity Semiconductor Lasers for Narrow-Line, Tunable Microwave Generation

Photonics ◽  
2019 ◽  
Vol 6 (3) ◽  
pp. 81 ◽  
Author(s):  
Md. Rezaul Hoque Khan ◽  
Md. Ashraful Hoque
Keyword(s):  
Phase Noise ◽  
Semiconductor Lasers ◽  
External Cavity ◽  
Injection Locking ◽  
Optical Injection ◽  
Optical Cavities ◽  
Microwave Generation ◽  
Microwave Signals ◽  
Tunable Frequency ◽  
External Cavity Semiconductor Lasers

The generation by optical injection locking of spectrally unadulterated microwave signals using waveguide based external cavity semiconductor lasers (WECSL) is demonstrated. A tunable frequency of 2–11 GHz, limited by the modulator’s bandwidth and the photodetector (PD), was created as proof-of-experiment by the injection locking of the two WESCLs. A single sideband (SSB) phase noise of −75 dBc/Hz from the generated carrier at 10 kHz offset and a phase noise variance at an optimum injection ratio region was 0.03 rad2, corresponding to 1.7°, were observed. The main feature of this approach is the consolidation of the upsides of microwave generation at low phase noise with a broad tuning range and the capacity of hybrid photonic integration. In addition, the injection locking characteristics were used to determine the Q factor of the complicated optical cavities with unknown inner losses.

Widely Tunable Narrow-Linewidth Monolithically Integrated External-Cavity Semiconductor Lasers

2015 ◽  
Vol 21 (6) ◽  
pp. 214-222 ◽  
Author(s):  
Tin Komljenovic ◽  
Sudharsanan Srinivasan ◽  
Erik Norberg ◽  
Michael Davenport ◽  
Gregory Fish ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
External Cavity ◽  
Narrow Linewidth ◽  
Monolithically Integrated ◽  
External Cavity Semiconductor Lasers

scholarly journals Active Mode-Hop Suppression in Littman-type External Cavity Semiconductor Lasers

1999 ◽  
Vol 119 (7) ◽  
pp. 815-820
Author(s):  
Shigenori Mattori ◽  
Takanori Saitoh ◽  
Shigeru Kinugawa ◽  
Koichiro Miyagi
Keyword(s):  
Semiconductor Lasers ◽  
External Cavity ◽  
Active Mode ◽  
External Cavity Semiconductor Lasers

Characteristics of High Power Volume-Bragg-Grating External Cavity Semiconductor Lasers

2008 ◽  
Vol 35 (4) ◽  
pp. 501-504
Author(s):  
薄报学 Bo Baoxue ◽  
高欣 Gao Xin ◽  
乔忠良 Qiao Zhongliang ◽  
王玉霞 Wang Yuxia ◽  
卢鹏 Lu Peng ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
High Power ◽  
External Cavity ◽  
Bragg Grating ◽  
Volume Bragg Grating ◽  
External Cavity Semiconductor Lasers
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