Tunnel quantum well-on-dots InGaAs-InAs high-gain medium for laser diodes

2006 ◽  
Author(s):  
V. Tokranov ◽  
M. Yakimov ◽  
J. van Eisden ◽  
S. Oktyabrsky
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
High Gain ◽  
Gain Medium

Growth, Spectroscopy, and Laser Application of Self-Ordered III-V Quantum Dots

MRS Bulletin ◽  
1998 ◽  
Vol 23 (2) ◽  
pp. 31-34 ◽  
Author(s):  
D. Bimberg ◽  
M. Grundmann ◽  
N.N. Ledentsov
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
State Of The Art ◽  
Laser Diodes ◽  
Threshold Current ◽  
High Gain ◽  
Gain Medium ◽  
Modern Technology ◽  
High Quantum Efficiency ◽  
Light Emitting

The development and application of semiconductor light-emitting and laser diodes has been a huge success during the last 30 years in key areas of modern technology like communications, recording, and printing. Still there is ample room for improvement through combination of the atomlike properties for zero-dimensionally localized carriers in quantum dots (QDs) with state-of-the-art semiconductor-laser technology. Low, temperature-insensitive threshold current; high gain; and differential gain have been predicted since the early 1980s.In the past two decades, the fabrication of QDs has been attempted using colloidal techniques (see the article by Nozik and Mićić in this issue), patterning, etching, and layer fluctuations (see the article by Gammon in this issue). However a break-through occurred recently through the employment of self-ordering mechanisms during epitaxy of lattice-mismatched materials (see the next section) for the creation of high-density arrays of QDs that exhibit excellent optical properties, particularly high quantum efficiency, up to room temperature. The zero-dimensional carrier confinement and subsequent atomlike electronic properties have a drastic impact on optical properties (see the section on Spectroscopy). Also intimately connected is the applicability of QDs as a novel gain medium in state-of-the-art laser diodes with superior properties (see the section on Lasers).

1.5μm λ/4 shifted multiple quantum well distributed feedback laser diodes

1988 ◽  
Vol 24 (23) ◽  
pp. 1408 ◽  
Author(s):  
T. Sasaki ◽  
S. Takano ◽  
N. Henmi ◽  
H. Yamada ◽  
M. Kitamura ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Distributed Feedback ◽  
Multiple Quantum ◽  
Distributed Feedback Laser

scholarly journals The influence of quantum well geometry on wavelength of AlInGaAs/InP laser diodes

2020 ◽  
Vol 1695 ◽  
pp. 012079
Author(s):  
A Chelny ◽  
Yu Akhmerov ◽  
A Savchuk ◽  
A Zharkova ◽  
O Rabinovich ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes

1.5 μm multiple-quantum-well distributed feedback laser diodes grown on corrugated InP by MOVPE

1988 ◽  
Vol 24 (16) ◽  
pp. 1045 ◽  
Author(s):  
M. Kitamura ◽  
S. Takano ◽  
N. Henmi ◽  
T. Sasaki ◽  
H. Yamada ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Distributed Feedback ◽  
Multiple Quantum ◽  
Distributed Feedback Laser

Impurity-Induced Layer Disordering in AlxGa1−xAs-GaAs Quantum well Heterostructures -

1988 ◽  
Vol 126 ◽  
Author(s):  
D. G. Deppe ◽  
L. J. Guido ◽  
N. Holonyak
Keyword(s):  
Experimental Data ◽  
Quantum Well ◽  
Laser Diodes ◽  
Growth Direction ◽  
High Power Laser ◽  
Power Laser ◽  
Frenkel Defects ◽  
Buried Heterostructure ◽  
And Diffusion ◽  
Disordered Regions

ABSTRACTSelective interdiffusion of Al and Ga at AlxGa1−x As-GaAs heterointerfaces can be carried out by conventional masking procedures and diffusion of acceptor impurities (e.g., Zn), or donor impurities (e.g., Si), or also by ion implantation. This process, impurity-induced layer disordering (IILD), makes it possible to convert quantum well heterostructures (QWHs) such as AlxGa1−xAs-GaAs superlattices (SLs) into bulk homogeneous AlyGa1−yAs where y is the average Al composition of the QWH or SL. Since th IILY process is maskable and thus selective, heterojunctions can be formed in directions perpendicular to the crystal growth direction, i.e., between as-grown “ordered” and IILD “disordered” regions. To date this process has been used most effectively in the fabrication of buriedheterostructure QW lasers, single and multiple stripe, where the disordered regions provide both optical and electrical confinement. The IILD process has also been used to advantage in the fabrication of high power laser diodes with non-absorbing “windows” at the laser facets and thus with better immunity from facet damage. In this paper we present data on the application of the IILD process to the fabrication of buried-heterostructure QW laser diodes. We also describe possible mechanisms by which the impurity-induced layer disordering proceeds based on Column III “Frenkel” defects and the influence of the crystal Fermi level on the defect solubility. These mechanisms are supported by experimental data.

Cavity Parameters of ZnCdSe/ZnSe Single-Quantum-Well Separate-Confinement-Heterostructure Laser Diodes

1993 ◽  
Vol 32 (Part 2, No. 12A) ◽  
pp. L1750-L1752 ◽  
Author(s):  
Ayumu Tsujimura ◽  
Shigeo Yoshii ◽  
Shigeo Hayashi ◽  
Kazuhiro Ohkawa ◽  
Tsuneo Mitsuyu
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Heterostructure Laser

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

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