Spatial mapping of fluorescence and Raman spectra across grain boundaries in a transparent Nd-YAG ceramic laser material

Author(s):  
Sang-Ho Lee ◽  
Joseph P. Stitt ◽  
William B. White ◽  
Gary L. Messing ◽  
Venkatraman Gopalan
1972 ◽  
Vol 7 (9) ◽  
pp. 1090-1092 ◽  
Author(s):  
C. F. Rapp ◽  
J. Chrysochoos

2002 ◽  
Vol 81 (23) ◽  
pp. 4324-4326 ◽  
Author(s):  
J. Lu ◽  
K. Takaichi ◽  
T. Uematsu ◽  
A. Shirakawa ◽  
M. Musha ◽  
...  
Keyword(s):  

2009 ◽  
Author(s):  
J. C. Huie Imholt ◽  
T. Hartnett ◽  
R. Gentilman ◽  
S. R. Silberstein

2007 ◽  
Vol 1039 ◽  
Author(s):  
Paul William May ◽  
William J Ludlow ◽  
Matthew Hannaway ◽  
James A Smith ◽  
Keith N Rosser ◽  
...  

AbstractWe present data showing how the electrical conductivity and Raman spectra of boron doped ‘cauliflower’-type nanocrystalline (c-NCD) CVD diamond films vary as a function of B content. The conductivity is roughly linear as a function of B content between an onset threshold of ∼5×1020 cm−3 up to ∼6×1021 cm−3, with the higher concentrations giving near metallic conductivity values. The onset threshold may be due to compensating donors due to the large number of impurities and defects in these films. The position of the Lorentzian contribution to the 500 cm−1 Raman feature was used to estimate the B content and compared to the value measured using SIMS. We found that the Raman method overestimated the concentration of B by a factor of ∼5 for these c-NCD films. The shortfall may be explained if only a small fraction of the B found in the small-grained films is being incorporated into substitutional sites. We conclude that in diamond films with a high concentration of grain boundaries, the majority of the B (80% in some cases) must be present at or in the grain boundaries.


2006 ◽  
Author(s):  
Narasimha S. Prasad ◽  
Sudhir B. Trivedi ◽  
Susan Kutcher ◽  
Chen-Chia Wang ◽  
G. Jagannathan ◽  
...  

2008 ◽  
Vol 36 (9) ◽  
pp. 544-548
Author(s):  
Takagimi YANAGITANI ◽  
Hideki YAGI

1989 ◽  
Vol 153 ◽  
Author(s):  
C. A. Melendres ◽  
A. Narayanasamy ◽  
V. A. Maroni ◽  
R. W. Siegel

AbstractRaman spectra have been recorded for as-consolidated nanophase TiO2 samples with differing grain sizes and on samples annealed in air at a variety of temperatures up to 1273 K. The nanophase samples with the smallest grain size, about 12 nm average diameter, could have 15-30% of their atoms in grain boundaries; nevertheless, the strong Raman-active lines representative of the rutile structure were found to dominate all of the observed spectra, independent of grain size and annealing treatment. These lines were quite broad in the as-consolidated nanophase samples, equally in 12 nm and 100 nm grain-size compacts, but sharpened considerably upon annealing at elevated temperatures. The Raman data give no indication of grain-boundary structures in nanophase TiO2 that are significantly different from those in conventional polycrystals. However, defect structures within the grains, which anneal out at elevated temperatures, are evidenced by changes in the Raman spectra.


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