scholarly journals Roadmap for high efficiency solid-state neutron detectors

Author(s):  
R. J. Nikolic ◽  
C. L. Cheung ◽  
C. E. Reinhardt ◽  
T. F. Wang
2016 ◽  
Author(s):  
Jia-Woei Wu ◽  
Kuan-Chih Huang ◽  
Adam Weltz ◽  
Erik English ◽  
Mona M. Hella ◽  
...  

2012 ◽  
Vol 7 (03) ◽  
pp. C03014-C03014 ◽  
Author(s):  
Y Danon ◽  
J Clinton ◽  
K C Huang ◽  
N LiCausi ◽  
R Dahal ◽  
...  

Author(s):  
P. G. Kotula ◽  
D. D. Erickson ◽  
C. B. Carter

High-resolution field-emission-gun scanning electron microscopy (FESEM) has recently emerged as an extremely powerful method for characterizing the micro- or nanostructure of materials. The development of high efficiency backscattered-electron detectors has increased the resolution attainable with backscattered-electrons to almost that attainable with secondary-electrons. This increased resolution allows backscattered-electron imaging to be utilized to study materials once possible only by TEM. In addition to providing quantitative information, such as critical dimensions, SEM is more statistically representative. That is, the amount of material that can be sampled with SEM for a given measurement is many orders of magnitude greater than that with TEM.In the present work, a Hitachi S-900 FESEM (operating at 5kV) equipped with a high-resolution backscattered electron detector, has been used to study the α-Fe2O3 enhanced or seeded solid-state phase transformations of sol-gel alumina and solid-state reactions in the NiO/α-Al2O3 system. In both cases, a thin-film cross-section approach has been developed to facilitate the investigation. Specifically, the FESEM allows transformed- or reaction-layer thicknesses along interfaces that are millimeters in length to be measured with a resolution of better than 10nm.


1994 ◽  
Author(s):  
Todd S. Rose ◽  
James S. Swenson ◽  
Renny A. Fields

2012 ◽  
Vol 40 (10) ◽  
pp. 2569-2577 ◽  
Author(s):  
Seung-Bok Ok ◽  
Hong-Je Ryoo ◽  
Sung-Roc Jang ◽  
Suk-Ho Ahn ◽  
Gennadi Goussev

2015 ◽  
Vol 19 (10) ◽  
pp. 3139-3144 ◽  
Author(s):  
Kerttu Aitola ◽  
Jinbao Zhang ◽  
Nick Vlachopoulos ◽  
Janne Halme ◽  
Antti Kaskela ◽  
...  

2018 ◽  
Vol 27 (01n02) ◽  
pp. 1840002 ◽  
Author(s):  
Machhindra Koirala ◽  
Jia Woei Wu ◽  
Adam Weltz ◽  
Rajendra Dahal ◽  
Yaron Danon ◽  
...  

We present a cost effective and scalable approach to fabricate solid state thermal neutron detectors. Electrophoretic deposition technique is used to fill deep silicon trenches with 10B nanoparticles instead of conventional chemical vapor deposition process. Deep silicon trenches with width of 5-6 μm and depth of 60-65 μm were fabricated in a p-type Si (110) wafer using wet chemical etching method instead of DRIE method. These silicon trenches were converted into continuous p-n junction by the standard phosphorus diffusion process. 10B micro/nano particle suspension in ethyl alcohol was used for electrophoretic deposition of particles in deep trenches and iodine was used to change the zeta potential of the particles. The measured effective boron nanoparticles density inside the trenches was estimated to be 0.7 gm cm-3. Under the self-biased condition, the fabricated device showed the intrinsic thermal neutron detection efficiency of 20.9% for a 2.5 × 2.5 mm2 device area.


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