Fluorescence spectroscopy in tissue phantoms for improved depth resolution in tissue imaging

2005 ◽  
Author(s):  
Jenny Svensson ◽  
Anikitos Garofalakis ◽  
Heiko Meyer ◽  
Florian Forster ◽  
Jorge Ripoll ◽  
...  
Keyword(s):  
Fluorescence Spectroscopy ◽  
Depth Resolution ◽  
Tissue Imaging ◽  
Tissue Phantoms

Fluorescence Spectroscopy in Tissue Phantoms for Improved Depth Resolution in Molecular Imaging

2005 ◽  
Author(s):  
Jenny Svensson ◽  
Stefan Andersson-Engels ◽  
Anikitos Garofalakis ◽  
Heiko Meyer ◽  
Jorge Ripoll
Keyword(s):  
Molecular Imaging ◽  
Fluorescence Spectroscopy ◽  
Depth Resolution ◽  
Tissue Phantoms

scholarly journals Contrast Enhancement of Optical Coherence Tomography Images Using Branched Gold Nanoparticles

2012 ◽  
Vol 2012 ◽  
pp. 1-9 ◽  
Author(s):  
Y. Ponce de León ◽  
J. L. Pichardo-Molina ◽  
N. Alcalá Ochoa ◽  
D. Luna-Moreno
Keyword(s):  
Gold Nanoparticles ◽  
Optical Coherence Tomography ◽  
Contrast Agent ◽  
Plasmon Resonance ◽  
Tissue Imaging ◽  
Optical Coherence ◽  
Tissue Phantoms ◽  
Promising Application ◽  
Oct Imaging ◽  
Scatter Light

We propose the use of branched gold nanoparticles (B-GNPs) as a contrast agent for optical coherence tomography (OCT) imaging. Our results show that even when the central source of our OCT (1325 nm) is too far from the maximum peak of the plasmon resonance, branched nanoparticles scatter light very efficiently at this wavelength. B-GNPs were tested as a contrast agent in water and agarose-TiO2tissue phantoms; the estimated increments in contrast were 9.19 dB and 15.07 dB for branched nanoparticles in water with concentrations of2.2×109 NPs/mL and6.6×109 NPs/mL, respectively, while for agarose-TiO2tissue phantoms the estimated value was 3.17 dB. These results show the promising application of B-GNPs as a contrast agent for tissue imaging using OCT, not only for sources at 1325 nm but also at other central wavelengths located between 800 and 1000 nm.

scholarly journals Deep tissue imaging by enhanced photon collection

2014 ◽  
Vol 07 (05) ◽  
pp. 1450034 ◽  
Author(s):  
Viera Crosignani ◽  
Sohail Jahid ◽  
Alexander Dvornikov ◽  
Enrico Gratton
Keyword(s):  
Ex Vivo ◽  
Second Harmonic ◽  
Fold Increase ◽  
Turbid Media ◽  
Tissue Imaging ◽  
Fluorescence Lifetime Imaging ◽  
Detection Scheme ◽  
Two Photon ◽  
Tissue Phantoms

We have developed a two-photon fluorescence microscope capable of imaging up to 4mm in turbid media with micron resolution. The key feature of this instrument is the innovative detector, capable of collecting emission photons from a wider surface area of the sample than detectors in traditional two-photon microscopes. This detection scheme is extremely efficient in the collection of emitted photons scattered by turbid media which allows eight fold increase in the imaging depth when compared with conventional two-photon microscopes. Furthermore, this system also has in-depth fluorescence lifetime imaging microscopy (FLIM) imaging capability which increases image contrast. The detection scheme captures emission light in a transmission configuration, making it extremely efficient for the detection of second harmonic generation (SHG) signals, which is generally forward propagating. Here we present imaging experiments of tissue phantoms and in vivo and ex vivo biological tissue performed with this microscope.

Lateral resolution of the electron microbeam analysis

1978 ◽  
Vol 36 (1) ◽  
pp. 542-543
Author(s):  
H.J. Dudek
Keyword(s):  
Quantitative Analysis ◽  
Depth Resolution ◽  
Lateral Resolution ◽  
Cylindrical Particle ◽  
Correction Procedure ◽  
X Ray ◽  
Element Concentrations ◽  
Microbeam Analysis ◽  
The Matrix

The chemical inhomogenities in modern materials such as fibers, phases and inclusions, often have diameters in the region of one micrometer. Using electron microbeam analysis for the determination of the element concentrations one has to know the smallest possible diameter of such regions for a given accuracy of the quantitative analysis.In th is paper the correction procedure for the quantitative electron microbeam analysis is extended to a spacial problem to determine the smallest possible measurements of a cylindrical particle P of high D (depth resolution) and diameter L (lateral resolution) embeded in a matrix M and which has to be analysed quantitative with the accuracy q. The mathematical accounts lead to the following form of the characteristic x-ray intens ity of the element i of a particle P embeded in the matrix M in relation to the intensity of a standard S

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

The Basic Physical Principles of Ion, Electron, and X-Ray Detectors and Their Application to Microanalysis

1985 ◽  
Vol 43 ◽  
pp. 154-157
Author(s):  
A.J. Tousimis
Keyword(s):  
Ion Beam ◽  
Depth Resolution ◽  
Sample Surface ◽  
High Energy ◽  
X Rays ◽  
X Ray ◽  
Electrons And Ions ◽  
Spatial Depth ◽  
Minimum Surface Area ◽  
Physical Principles

An integral and of prime importance of any microtopography and microanalysis instrument system is its electron, x-ray and ion detector(s). The resolution and sensitivity of the electron microscope (TEM, SEM, STEM) and microanalyzers (SIMS and electron probe x-ray microanalyzers) are closely related to those of the sensing and recording devices incorporated with them.Table I lists characteristic sensitivities, minimum surface area and depth analyzed by various methods. Smaller ion, electron and x-ray beam diameters than those listed, are possible with currently available electromagnetic or electrostatic columns. Therefore, improvements in sensitivity and spatial/depth resolution of microanalysis will follow that of the detectors. In most of these methods, the sample surface is subjected to a stationary, line or raster scanning photon, electron or ion beam. The resultant radiation: photons (low energy) or high energy (x-rays), electrons and ions are detected and analyzed.

Analysis of completed commercial semiconductors using EPMA

1996 ◽  
Vol 54 ◽  
pp. 502-503
Author(s):  
R. Packwood ◽  
M.W. Phaneuf ◽  
V. Weatherall ◽  
I. Bassignana
Keyword(s):  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
Semiconductor Industry ◽  
Detection Limits ◽  
High Technology ◽  
Depth Resolution ◽  
Analytical Instruments ◽  
Wide Range ◽  
Numerous Element ◽  
Choice Method

The development of specialized analytical instruments such as the SIMS, XPS, ISS etc., all with truly incredible abilities in certain areas, has given rise to the notion that electron probe microanalysis (EPMA) is an old fashioned and rather inadequate technique, and one that is of little or no use in such high technology fields as the semiconductor industry. Whilst it is true that the microprobe does not possess parts-per-billion sensitivity (ppb) or monolayer depth resolution it is also true that many times these extremes of performance are not essential and that a few tens of parts-per-million (ppm) and a few tens of nanometers depth resolution is all that is required. In fact, the microprobe may well be the second choice method for a wide range of analytical problems and even the method of choice for a few.The literature is replete with remarks that suggest the writer is confusing an SEM-EDXS combination with an instrument such as the Cameca SX-50. Even where this confusion does not exist, the literature discusses microprobe detection limits that are seldom stated to be as low as 100 ppm, whereas there are numerous element combinations for which 10-20 ppm is routinely attainable.

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