Status of AlGaN based focal plane arrays for UV solar blind detection

Author(s):  
Jean-Luc Reverchon ◽  
Giovanni Mazzeo ◽  
Amélie Dussaigne ◽  
Jean-Yves Duboz
2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Qing Cai ◽  
Haifan You ◽  
Hui Guo ◽  
Jin Wang ◽  
Bin Liu ◽  
...  

AbstractSolar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties, such as tunable wide bandgaps for intrinsic UV detection. In recent decades, a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection. As integrated optoelectronic technology advances, AlGaN-based focal plane arrays (FPAs) are manufactured and exhibit outstanding solar-blind imaging capability. Considering the rapid development of AlGaN detection techniques, this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs. First, the basic physical properties of AlGaN are presented. The epitaxy and p-type doping problems of AlGaN alloys are then discussed. Diverse PDs, including photoconductors and Schottky, metal–semiconductor–metal (MSM), p-i-n, and avalanche photodiodes (APDs), are demonstrated, and the physical mechanisms are analyzed to improve device performance. Additionally, this paper summarizes imaging technologies used with AlGaN FPAs in recent years. Benefiting from the development of AlGaN materials and optoelectronic devices, solar-blind UV detection technology is greeted with significant revolutions.


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2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Qing Cai ◽  
Haifan You ◽  
Hui Guo ◽  
Jin Wang ◽  
Bin Liu ◽  
...  

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Vol 51 (6) ◽  
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