Resonant leaky-mode photonic lattices with engineered spectra and device applications

2005 ◽  
Author(s):  
R. Magnusson ◽  
Y. Ding
Keyword(s):  
Leaky Mode ◽  
Photonic Lattices ◽  
Device Applications

Principles of leaky-mode photonic lattices: Band flips and Bloch mode dynamics

2019 ◽  
Author(s):  
Robert Magnusson ◽  
Sun G. Lee ◽  
Kyu J. Lee ◽  
Hafez Hemmati ◽  
Daniel J. Carney ◽  
...  
Keyword(s):  
Leaky Mode ◽  
Photonic Lattices ◽  
Bloch Mode

Fundamentals and Applications of Resonant Leaky-Mode Photonic Lattices

2019 ◽  
Author(s):  
Robert Magnusson ◽  
Hafez Hemmati ◽  
Daniel John Carney ◽  
Kyu Jin Lee ◽  
Yeong Hwan Ko ◽  
...  
Keyword(s):  
Leaky Mode ◽  
Photonic Lattices

scholarly journals Band dynamics of leaky-mode photonic lattices

2019 ◽  
Vol 27 (13) ◽  
pp. 18180 ◽  
Author(s):  
Sun-Goo Lee ◽  
Robert Magnusson
Keyword(s):  
Leaky Mode ◽  
Photonic Lattices

scholarly journals Bound states in the continuum (BIC) accompanied by avoided crossings in leaky-mode photonic lattices

Nanophotonics ◽  
2020 ◽  
Vol 9 (14) ◽  
pp. 4373-4380 ◽  
Author(s):  
Sun-Goo Lee ◽  
Seong-Han Kim ◽  
Chul-Sik Kee
Keyword(s):  
Mirror Symmetry ◽  
Bound States ◽  
Radiation Power ◽  
Leaky Mode ◽  
Slab Geometry ◽  
Photonic Lattices ◽  
Guided Mode ◽  
Avoided Crossing ◽  
Avoided Crossings ◽  
The Continuum

AbstractWhen two nonorthogonal resonances are coupled to the same radiation channel, avoided crossing arises and a bound state in the continuum (BIC) appears with appropriate conditions in parametric space. This paper presents numerical and analytical results on the properties of avoided crossing and BIC due to the coupled guided-mode resonances in one-dimensional (1D) leaky-mode photonic lattices with slab geometry. In symmetric photonic lattices with up-down mirror symmetry, Friedrich–Wintgen BICs with infinite lifetime are accompanied by avoided crossings due to the coupling between two guided modes with the same transverse parity. In asymmetric photonic lattices with broken up-down mirror symmetry, quasi-BICs with finite lifetime appear with avoided crossings because radiating waves from different modes cannot be completely eliminated. We also show that unidirectional-BICs are accompanied by avoided crossings due to guided-mode resonances with different transverse parities in asymmetric photonic lattices. The Q factor of a unidirectional-BIC is finite, but its radiation power in the upward or downward direction is significantly smaller than that in the opposite direction. Our results may be helpful in engineering BICs and avoided crossings in diverse photonic systems that support leaky modes.

scholarly journals Dispersion Engineering with Leaky-Mode Resonant Photonic Lattices

2009 ◽  
Vol 18 (1) ◽  
pp. 108 ◽  
Author(s):  
Robert Magnusson* ◽  
Mehrdad Shokooh-Saremi ◽  
Xin Wang
Keyword(s):  
Leaky Mode ◽  
Dispersion Engineering ◽  
Photonic Lattices

Enabling Technology Based on Leaky-Mode Resonance Effects in Periodic Films

2007 ◽  
Vol 1054 ◽  
Author(s):  
Robert Magnusson ◽  
Mehrdad Shokooh-Saremi ◽  
Kyu J. Lee ◽  
Debra Wawro
Keyword(s):  
Physical Properties ◽  
Layered Materials ◽  
Leaky Mode ◽  
Enabling Technology ◽  
Photonic Device ◽  
Resonance Effects ◽  
Leaky Modes ◽  
Device Applications

ABSTRACTThe physical properties of resonant leaky modes in periodically patterned layered materials are summarized. Representative examples of photonic device applications including filters, polarizers, wideband reflectors, tunable elements, and biosensors are discussed.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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